Microelectronics: Circuit Analysis and ...4th EditionDonald A. Neamen Publisher: McGraw-Hill Companies, TheISBN: 9780073380643
Microelectronics: Circuit Analysis and ...
Solutions for Microelectronics: Circuit Analysis and Design
Problem 1.1EP:
Calculate the intrinsic carrier concentration in gallium arsenide and germanium at T=300K . (Ans....Problem 1.2EP:
(a) Calculate the majority and minority carrier concentrations in silicon at T=300K for (i)...Problem 1.3EP:
Consider ntype GaAs at T=300K doped to a concentration of Nd=21016cm3 . Assume mobility values of...Problem 1.4EP:
Consider silicon at T=300K . Assume the hole concentration is given by p=1016ex/Lp(cm3) , where...Problem 1.1TYU:
Determine the intrinsic carrier concentration in silicon, germanium, and GaAs at (a) T=400K and (b)...Problem 1.2TYU:
(a) Consider silicon at T=300K . Assume that n=1350cm2/Vs and p=480cm2/Vs . Determine the...Problem 1.3TYU:
Using the results of TYU1.2, determine the drift current density if an electric field of 4 V/cm is...Problem 1.4TYU:
The electron and hole diffusion coefficients in silicon are Dn=35cm2/s and Dp=12.5cm2/s ,...Problem 1.5TYU:
A sample of silicon at T=300K is doped to Nd=81015cm3 . (a) Calculate no and po . (b) If excess...Problem 1.5EP:
(a) Calculate Vbi for a GaAs pn junction at T=300K for Na=1016cm3 and Nd=1017cm3 (b) Repeat part (a)...Problem 1.6EP:
A silicon pn junction at T=300K is doped at Nd=1016cm3 and Na=1017cm3 . The junction capacitance is...Problem 1.7EP:
(a) A silicon pn junction at T=300K has a reversesaturation current of IS=21014A . Determine the...Problem 1.6TYU:
(a) Determine Vbi for a silicon pn junction at T=300K for Na=1015cm3 and Nd=51016cm3 . (b) Repeat...Problem 1.7TYU:
A silicon pn junction diode at T=300K has a reversesaturation current of IS=1016A . (a) Determine...Problem 1.8TYU:
Recall that the forwardbias diode voltage decreases approximately by 2mV/C for silicon diodes with a...Problem 1.8EP:
Consider the circuit in Figure 1.28. Let VPS=4V , R=4k , and IS=1012A . Determine VD and ID , using...Problem 1.9EP:
(a) Consider the circuit shown in Figure 1.28. Let VPS=8V and V=0.7V , Assume rf=0 . Calculate the...Problem 1.10EP:
The resistor parameter in the circuit shown in Figure 1.28 is changed to R=20k . Using a PSpice...Problem 1.9TYU:
Consider the diode and circuit in Exercise EX 1.8. Determine VD and ID , using the graphical...Problem 1.10TYU:
Consider the circuit in Figure 1.28. Let R=4k and V=0.7V . Determine ID for (a) VPS=0.5V , (b)...Problem 1.11TYU:
The power supply (input) voltage in the circuit of Figure 1.28 is VPS=10V and the diode cutin...Problem 1.11EP:
(a) The circuit and diode parameters for the circuit shown in Figure 1.35(a) are VPS=8V , R=20k ,...Problem 1.12TYU:
Determine the diffusion conductance of a pn junction diode at T=300K and biased at a current of 0.8...Problem 1.13TYU:
Determine the smallsignal diffusion resistance of a pn junction diode at ID=10A , 100A , and 1 mA....Problem 1.14TYU:
The diffusion resistance of a pn junction diode at T=300K is determined to be rd=50 . What is the...Problem 1.12EP:
A pn junction diode and a Schottky diode both have forwardbias currents of 1.2 mA. The...Problem 1.13EP:
Consider the circuit shown in Figure 1.45. Determine the value of resistance R required to limit the...Problem 1.15TYU:
Consider the circuit shown in Figure 1.46. The diode can be either a pn junction diode or a Schottky...Problem 1.16TYU:
A Zener diode has an equivalent series resistance of 20 . If the voltage across the Zener diode is...Problem 1.17TYU:
The resistor in the circuit shown in Figure 1.45 has a value of R=4k , the Zener diode breakdown...Problem 1RQ:
Describe an intrinsic semiconductor material. What is meant by the intrinsic carrier concentration?Problem 2RQ:
Describe the concept of an electron and a hole as charge carriers in the semiconductor material.Problem 3RQ:
Describe an extrinsic semiconductor material. What is the electron concentration in terms of the...Problem 4RQ:
Describe the concepts of drift current and diffusion current in a semiconductor material.Problem 5RQ:
How is a pn junction formed? What is meant by a builtin potential barrier, and how is it formed?Problem 8RQ:
Describe the iteration method of analysis and when it must be used to analyze a diode circuit.Problem 9RQ:
Describe the piecewise linear model of a diode and why it is useful. What is the diode turnon...Problem 10RQ:
Define a load line in a simple diode circuit.Problem 11RQ:
Under what conditions is the smallsignal model of a diode used in the analysis of a diode circuit?Problem 12RQ:
Describe the operation of a simple solar cell circuit.Problem 13RQ:
How do the i characteristics of a Schottky barrier diode differ from those of a pn junction diode?Problem 1.1P:
(a) Calculate the intrinsic carrier concentration in silicon at (i) T=250K and (ii) T=350K . (b)...Problem 1.2P:
(a) The intrinsic carrier concentration in silicon is to be no larger than ni=1012cm3 . Determine...Problem 1.3P:
Calculate the intrinsic carrier concentration in silicon and germanium at (a) T=100K , (b) T=300K ,...Problem 1.4P:
(a) Find the concentration of electrons and holes in a sample of germanium that has a concentration...Problem 1.5P:
Gallium arsenide is doped with acceptor impurity atoms at a concentration of 1016cm3 . (a) Find the...Problem 1.6P:
Silicon is doped with 51016 arsenic atoms/cm3 . (a) Is the material n or ptype? (b) Calculate the...Problem 1.7P:
(a) Calculate the concentration of electrons and holes in silicon that has a concentration of...Problem 1.8P:
A silicon sample is fabricated such that the hole concentration is po=21017cm3 . (a) Should boron or...Problem 1.9P:
The electron concentration in silicon at T=300K is no=51015cm3 , (a) Determine the hole...Problem 1.10P:
(a) A silicon semiconductor material is to be designed such that the majority carrier electron...Problem 1.11P:
(a) The applied electric field in ptype silicon is E=10V/cm . The semiconductor conductivity is...Problem 1.12P:
A drift current density of 120A/cm2 is established in ntype silicon with an applied electric field...Problem 1.13P:
An ntype silicon material has a resistivity of =0.65cm . (a) If the electron mobility is...Problem 1.14P:
(a) The applied conductivity of a silicon material must be =1.5(cm)1 . If n=1000cm2/Vs and...Problem 1.15P:
In GaAs, the mobilities are n=8500cm2/Vs and p=400cm2/Vs . (a) Determine the range in conductivity...Problem 1.16P:
The electron and hole concentrations in a sample of silicon are shown in Figure P1.16. Assume the...Problem 1.17P:
The hole concentration in silicon is given by p(x)=104+1015exp(x/Lp)x0 The value of Lp is 10m . The...Problem 1.18P:
GaAs is doped to Na=1017cm3 . (a) Calculate no and po . (b) Excess electrons and holes are generated...Problem 1.19P:
(a) Determine the builtin potential barrier Vbi in a silicon pn junction for (i) Nd=Na=51015cm3 ;...Problem 1.20P:
Consider a silicon pn junction. The nregion is doped to a value of Nd=1016cm3 . The builtin...Problem 1.21P:
The donor concentration in the nregion of a silicon pn junction is Nd=1016cm3 . Plot Vbi versus Na...Problem 1.22P:
Consider a uniformly doped GaAs pn junction with doping concentrations of Nd=51018cm3 and...Problem 1.23P:
The zerobiased junction capacitance of a silicon pn junction is Cjo=0.4pF . The doping...Problem 1.24P:
The zerobias capacitance of a silicon pn junction diode is Cjo=0.02pF and the builtin potential is...Problem 1.25P:
The doping concentrations in a silicon pn junction are Nd=51015cm3 and Na=1017cm3 . The zerobias...Problem 1.26P:
(a) At what reversebias voltage does the reversebias current in a silicon pn junction diode reach 90...Problem 1.27P:
(a) The reversesaturation current of a pn junction diode is IS=1011A . Determine the diode current...Problem 1.28P:
(a) The reversesaturation current of a pn junction diode is IS=1011A . Determine the diode voltage...Problem 1.29P:
A silicon pn junction diode has an emission coefficient of n=1 . The diode current is ID=1mA when...Problem 1.31P:
(a) Consider a silicon pn junction diode operating in the forwardbias region. Determine the increase...Problem 1.32P:
A pn junction diode has IS=2nA . (a) Determine the diode voltage if (i) ID=2A and (ii) ID=20A . (b)...Problem 1.33P:
The reversebias saturation current for a set of diodes varies between 51014IS51012A . The diodes are...Problem 1.34P:
A germanium pn junction has a diode current of ID=1.5mA when biased at VD=0.30V . What is the...Problem 1.35P:
(a)The reversesaturation current of a gallium arsenide pn junction diode is IS=1022A . Determine the...Problem 1.36P:
The reversesaturation current of a silicon pn junction diode at T=300K is IS=1012A . Determine the...Problem 1.37P:
A silicon pn junction diode has an applied forwardbias voltage of 0.6 V. Determine the ratio of...Problem 1.38P:
A pn junction diode is in series with a 1M resistor and a 2.8 V power supply. The reversesaturation...Problem 1.39P:
Consider the diode circuit shown in Figure P1.39. The diode reversesaturation current is IS=1012A ....Problem 1.40P:
The diode in the circuit shown in Figure P1.40 has a reversesaturation current of IS=51013A ....Problem 1.42P:
(a) The reversesaturation current of each diode in the circuit shown in Figure P1.42 is IS=61014A ....Problem 1.43P:
(a) Consider the circuit shown in Figure P1.40. The value of R1 is reduced to R1=10k and the cut-in...Problem 1.44P:
Consider the circuit shown in Figure P1.44. Determine the diode current ID and diode voltage VD for...Problem 1.46P:
The cutin voltage of the diode shown in the circuit in Figure P1.46 is V=0.7V . The diode is to...Problem 1.47P:
Find I and VO in each circuit shown in Figure P1.47 if (i) V=0.7V and (ii) V=0.6V . Figure P1.47Problem 1.48P:
Repeat Problem 1.47 if the reversesaturation current for each diode isy IS=51014A . What is the...Problem 1.49P:
(a) In the circuit Shown in Figure P1.49, find the diode voltage VD and the supply voltage V such...Problem 1.50P:
Assume each diode in the circuit shown in Figure P1.50 has a cutin voltage of V=0.65V . (a) The...Problem 1.51P:
(a) Consider a pn junction diode biased at IDQ=1mA . A sinusoidal volt age is superimposed on VDQ...Problem 1.52P:
Determine the smallsignal diffusion resistancefor a diode biased at (a) (b) and (c) m:math...Problem 1.53P:
The diode in the circuit shown in Figure P1.53 is biased with a constant current source I. A...Problem 1.54P:
The forwardbias currents in a pn junction diode and a Schottky diode are 0.72 mA. The...Problem 1.55P:
A pn junction diode and a Schottky diode have equal crosssectional areas and have forwardbias...Problem 1.56P:
The reversesaturation currents of a Schottky diode and a pn junction diode are IS=5108A and 1012A ,...Problem 1.57P:
Consider the Zener diode circuit shown in Figure P1.57. The Zener break down voltage is VZ=5.6V at...Problem 1.58P:
(a) The Zener diode in Figure P1.57 is ideal with VZ=6.8V . Determine the maximum current and...Problem 1.59P:
Consider the Zener diode circuit shown in Figure P1.57. The Zener diode voltage is VZ=6.8V at...Problem 1.60P:
The Output current of a pn junction diode used as a solar cell can be given by ID=0.251014[exp( V D...Problem 1.61P:
Using the currentvoltage characteristics of the solar cell described in Problem 1.60, plot ID versus...Problem 1.62P:
(a) Using the currentvoltage characteristics of the solar cell described in problem 1.60, determine...Problem 1.63CSP:
Use a computer simulation to generate the ideal currentvoltage characteristics of a diode from a...Problem 1.66CSP:
Use a computer simulation to find the diode current, diode voltage, and output voltage for each...Problem D1.67DP:
Design a diode circuit to produce the load line and Qpoint shown in Figure P1.67. Assume diode...Problem D1.68DP:
Design a circuit to produce the characteristics shown in Figure P1.68, where iD is the diode current...Browse All Chapters of This Textbook
Chapter 1 - Semiconductor Materials And DiodesChapter 2 - Diode CircuitsChapter 3 - The Fields-effect TransistorChapter 4 - Basic Fet AmplifiersChapter 5 - Thebipolar Junction TransistorChapter 6 - Basic Bjt AmplifiersChapter 7 - Frequency ResponseChapter 8 - Output Stages And Power AmplifiersChapter 9 - Ideal Operational Amplifiers And Op-amp CircuitsChapter 10 - Integrated Circuit Biasinh And Active Loads
Chapter 11 - Differential And Multisatge AmplifiersChapter 12 - Feedback And StabilityChapter 13 - Operational Amplifier CircuitsChapter 14 - Nonideal Effects In Operational Amplifier CircuitsChapter 15 - Applications And Design Of Integrated CircuitsChapter 16 - Mosfet Digital CircuitsChapter 17 - Bipolar Digital Circuits
Book Details
Microelectronics: Circuit Analysis and Designis intended as a core text in electronics for undergraduate electrical and computer engineering students. The fourth edition continues to provide a foundation for analyzing and designing both analog and digital electronic circuits. The goal has always been to make this book very readable and student friendly..An accessible approach to learning through clear writing and practical pedagogy has become the hallmark ofMicroelectronics: Circuit Analysis and Designby Donald Neamen. Now in its fourth edition, the text builds upon its strong pedagogy and tools for student assessment with key updates as well as revisions that allow for flexible coverage of op-amps. .
Sample Solutions for this Textbook
We offer sample solutions for Microelectronics: Circuit Analysis and Design homework problems. See examples below:
Chapter 1, Problem 1.1EPChapter 1, Problem 1.2EPChapter 1, Problem 1.1TYUChapter 1, Problem 1.7TYUChapter 1, Problem 1.3PChapter 1, Problem 1.17PChapter 1, Problem 1.27PChapter 1, Problem 1.30PChapter 1, Problem 1.35P
Given: The value of current is, IS1=IS2=10−13 A IS1=5×10−14 A, IS2=5×10−13A The given circuit is...Chapter 1, Problem 1.47PChapter 1, Problem 1.48PChapter 2, Problem 2.1EPChapter 2, Problem 2.1TYUChapter 2, Problem 2.3PChapter 2, Problem 2.24PChapter 2, Problem D2.25PChapter 2, Problem 2.45PChapter 2, Problem 2.47PChapter 2, Problem 2.51PChapter 2, Problem 2.52PChapter 2, Problem 2.57PChapter 2, Problem 2.59PChapter 2, Problem 2.62PChapter 3, Problem 3.1EPChapter 3, Problem 3.2TYUChapter 3, Problem 3.5EPChapter 3, Problem 3.8EPChapter 3, Problem 3.1PChapter 3, Problem 3.4PChapter 3, Problem 3.3CAEChapter 3, Problem 3.4CAEChapter 3, Problem 3.17PChapter 3, Problem 3.27PChapter 3, Problem 3.29PGiven Information: The given values are: VTN=1.4 V, Kn=0.25 mA/V2, IDQ=0.5 mA, VD=1 V The given...Given Information: The given circuit is shown below. VTN=0.4 V, kn'=120 μAV2( W L)1=( W L)2=30...Given Information: The given values are: VTN=0.6 V, kn'=120 μA/V2, IDQ=0.8 mA, V1=2.5 V, V2=6 V The...Given information: The given values are IDQ=0.8mAVTN=0.6Vkn'=100μA/V2=0.1mA/V2gm=1.8mA/V...Chapter 4, Problem 4.2EPChapter 4, Problem 4.3EPChapter 4, Problem 4.4EPChapter 4, Problem 4.8EPChapter 4, Problem 4.9EPChapter 4, Problem 4.12TYUChapter 4, Problem 4.40PChapter 4, Problem 4.66PChapter 4, Problem 4.67PChapter 4, Problem 4.70PChapter 4, Problem 4.71PChapter 4, Problem 4.78PChapter 5, Problem 5.1EPChapter 5, Problem 5.9EPChapter 5, Problem D5.31PChapter 5, Problem 5.32PChapter 5, Problem 5.42PChapter 5, Problem 5.52PGiven: The circuit is given as: Assume β=100 . Redrawing the given circuit by replacing voltage...Chapter 5, Problem 5.57PChapter 5, Problem 5.58PChapter 5, Problem D5.59PChapter 5, Problem D5.62PChapter 5, Problem 5.79PChapter 5, Problem 5.82PChapter 5, Problem D5.89DPChapter 5, Problem D5.91DPChapter 6, Problem 6.1EPGiven: Given circuit: Given Data: β=120VA=∞VBE(on)=0.7V Calculation: Considering the BJT (Bipolar...Given Information: The circuit diagram is shown below. β=120, VBE(on)=0.7 V, VA=∞VCC=VEE=3.3 V,...Chapter 6, Problem 6.16TYUChapter 6, Problem 6.19PChapter 6, Problem 6.26PChapter 6, Problem 6.45PChapter 6, Problem 6.51PChapter 6, Problem 6.52PChapter 6, Problem 6.54PChapter 6, Problem 6.83PChapter 7, Problem 7.1EPChapter 7, Problem 7.10EPChapter 7, Problem 7.21PChapter 7, Problem 7.23PChapter 7, Problem 7.32PChapter 7, Problem 7.40PChapter 7, Problem 7.41PChapter 7, Problem 7.49PChapter 7, Problem 7.50PChapter 7, Problem 7.69PChapter 7, Problem 7.70PCalculation: The expression for the collector to the emitter load line is given by, VCE=VCC−ICRC The...Calculation: The given diagram is shown in Figure 1 The conversion from 1 mA into A is given by, 1...Calculation: The sketch for the safe operating area of the transistor is shown below. The required...Calculation: The given diagram is shown in Figure 1 The expression for the maximum value of the...Calculation: The given diagram is shown in Figure 1 The conversion from 1 mA into A is given by, 1...Calculation: The given diagram is shown in Figure 1 The diagram for the class AB output stage using...Calculation: The given diagram is shown in Figure 1. The expression for the value of base current of...Chapter 8, Problem 8.48PChapter 8, Problem 8.49PChapter 9, Problem 9.1EPChapter 9, Problem 9.9EPChapter 9, Problem 9.6PChapter 9, Problem 9.13PChapter 9, Problem 9.14PChapter 9, Problem D9.18PChapter 9, Problem 9.51PChapter 9, Problem 9.62PChapter 9, Problem 9.63PChapter 9, Problem 9.65PChapter 9, Problem 9.67PChapter 9, Problem 9.72PChapter 9, Problem 9.81PChapter 10, Problem 10.1EPChapter 10, Problem 10.6TYUGiven: The circuit parameters are V+=+5VV−=0 The transistor parameters are...Chapter 10, Problem 10.56PGiven: VTN=0.4VVTP=−0.4VK'n=100μA/V2K'p=60μA/V2λn=λp=0 (W/L) 1 = (W/L) 2 =20 (W/L) 3 =5 (W/L) 4 =10...Chapter 10, Problem 10.63PGiven: VTN=0.5VVTP=−0.5V(1/2)μnCox=50μA/V2(1/2)μpCox=20μA/V2λn=λp=0 (W/L) 1 = (W/L) 3 = (W/L) 4 =5/1...Chapter 10, Problem 10.68PGiven: VTN=0.8VVTP=−0.8VK'n=100μA/V2K'P=60μA/V2λn=λp=0R=100kΩ Calculation: The given circuit is,...Chapter 10, Problem 10.76PGiven: R1=47kΩVAN=120VVAP=90VV+=3VVEB(on)=0.6V Calculation: The given circuit is, The transistor Q1...Chapter 10, Problem 10.83PChapter 10, Problem 10.89PChapter 10, Problem D10.90PChapter 11, Problem 11.1EPGiven: The given circuit is, V+=+5V ,V−=−5V,RD=1kΩ ,RS=2kΩ,VTP=−0.6V,Kp=1.2mA/V2,λ=0 v1=v2=0...Given: The given circuit is, V+=+5V ,V−=−5V,RD=25kΩ...Given: The given circuit is shown in Figure 1 Figure 1 Calculation: The expression for the current...Chapter 11, Problem 11.62PChapter 11, Problem 11.68PGiven: The given diagram is shown in Figure 1 Figure 1 Calculation: The expression for the input...Given: The given circuit is shown in Figure 1 Figure 1 Calculation: The expression for the input...Given: The given diagram is shown in Figure 1 Figure 1 Calculation: The expression to determine the...Chapter 11, Problem 11.82PGiven: The given circuit is, IQ=25μA,β=100 VA=50V,VTN=0.8V,Kn=0.25mA/V2,λ=0.02V−1 The two amplifying...Given: The circuit is given as: The circuit parameters:...Chapter 11, Problem 11.90PGiven: The given circuit is, β=200,VBE(on)=0.7V,VA=80V Calculation: Consider the given figure,...Chapter 11, Problem 11.93PChapter 11, Problem D11.105DPChapter 12, Problem 12.1EPGiven: The given diagram is shown in Figure 1 Figure 1 Calculation: Mark the nodes and redraw the...Given: The given diagram is shown in Figure 1 Figure 1 Feedback resistor value is varied between 5...Chapter 12, Problem 12.11TYUGiven: The give circuit is shown in Figure 1 Calculation: The value of the collector current of the...Chapter 12, Problem 12.37PChapter 12, Problem 12.38PGiven: The given values are: V+=5 VVGG=2.5 VRD1=5 kΩRE2=1.6 kΩRL=1.2 kΩKn=1.5(mAV2)VTN=0.5...Given: The given circuit is shown in Figure 1. Calculation: The Thevenin resistance of the above...Given: The given diagram is shown in Figure 1 Calculation: The expression to determine the value of...Chapter 12, Problem 12.49PChapter 12, Problem 12.50PChapter 12, Problem 12.53PGiven: The given circuit is shown in Figure 1 Figure 1 Calculation: The small signal equivalent...Chapter 12, Problem 12.77PChapter 12, Problem 12.80PGiven: The bias circuit and input stage portion of 741 op-amp circuit is shown below. Figure 1...Given: Following is given circuit of the MC14573 op-amp equivalent circuit Given data, The...Given: The circuit diagram of the BJT op-amp is Given that The transistor parameters are, β(npn)=120...Given: Circuit is given as; V+=3 V,V−=−3 V,R1=80 kΩ,RE=3.5 kΩ Current for transistors Q1,Q2 and Q3...Given: Consider the 741 op-amp having bias voltage ±5 V Calculation: The reference current is....Given: Consider the 741 op-amp having bias voltage ±5 V Calculation: The early voltage given as...Given: Consider the 741 op-amp having bias voltage ±5 V Calculation: The resistance at Q14 can be...Chapter 14, Problem 14.1TYUGiven: Given bipolar active load diff-amp is, Given parameters are: V+=5V V−=−5V The transistor...Chapter 14, Problem 14.38PGiven: Bipolar diff-amp with active load and a pair of offset-null terminal is shown below. Given...Given: The given circuit is: IB1=IB2=1 μA and vI=0 As vI=0 , the modified circuit is; For first...Given: The given circuit is: Input bias current IB=0.8 μA Input offset current IOS=0.2 μA R1=R2=50...Given: The given circuit is shown below. Input offset voltage is VOS=3 mV Average input bias current...Given: The given circuit is shown below. Input offset voltage V0S=2 mV at T=25°C Average input bias...Chapter 14, Problem 14.60PGiven: The given difference amplifier circuit is, Tolerance of each resistor is ±x% . Minimum CMRRdB...Chapter 15, Problem 15.1EPGiven: Circuit diagram for voltage regulator is shown below. The voltage of Zener diode Vz=5.6 V...Given: Calculation: Redraw the given circuit in s -domain as From the circuit,...Given: The circuit is given as: The circuit is redrawn by labeling the voltages as shown below:...Given: Consider the circuit shown below. Calculation: The non-inverting terminal of op-amp is...Given: The circuit is given for the phase shift oscillator: Redrawing the given circuit Nodal...Given: The circuit for the Hartley oscillator is given as: Transconductance, gm=30mA/VForward biased...Given: The circuit is given as: For the ideal operation amplifier, the inverting and non-inverting...Chapter 15, Problem 15.46PChapter 15, Problem 15.47PChapter 15, Problem 15.49PGiven: The circuit is given as: For the ideal operational amplifier, the currents in the inverting...Given: Given LM380 power amplifier circuit as V+=22Vβn=100βp=20 Calculation: Assuming matched input...Chapter 16, Problem 16.1EPGiven: Power supply voltage, VDD=3V Intrinsic trans conductance parameter, kn'=100×10−6A/V2 Device...Chapter 16, Problem 16.9EPGiven: The given circuit is shown below. The parameters are: VDD=3.3 VKn=50 μA/V2RD=100 kΩvI=3.3...Calculation: The given diagram is shown in Figure 1. The expression for the voltage VOH is given by,...Calculation: The given diagram is shown in Figure 1 The expression to determine the power dissipated...Calculation: The given diagram is shown in Figure 1 The expression to determine the...Calculation: The given diagram is shown in Figure 1 The expression to determine the...Calculation: The given diagram is shown in Figure 1. Consider the case when the input voltage is...Calculation: The expression to determine the value of the KN is given by, KN=k′n2(WL)n Substitute 80...Calculation: The expression to determine the value of the KN is given by, KN=k′n2(WL)n Substitute...Calculation: Consider the case when the input voltage is, vI=VDD The expression for the conduction...Calculation: The expression to determine the value of the KN is given by, KN=k′n2(WL)n Substitute...Calculation: The given diagram is shown in Figure 1 The given table is shown in Table 1 Table 1...Given: The given diagram is shown in Figure 1. Calculation: The expression to determine the...Calculation: The given diagram is shown in Figure 1 The expression to determine the analog output...Chapter 17, Problem 17.1EPCalculation: The given diagram is shown in Figure 1 The redesign circuit is shown below. The...Chapter 17, Problem 17.9EPCalculation: The given diagram is shown in Figure 1 Apply KVL in the above circuit. 5 V=iC(2.25...Calculation: The given diagram is shown in Figure 1 The expression to determine the value of the...Calculation: The given diagram is shown in Figure 1 Mark the currents and redraw the circuit. The...Calculation: The given diagram is shown in Figure 1. The expression for the current i1 is given by,...Calculation: The given diagram is shown in Figure 1 The expression for the voltage vB1 is given by,...
More Editions of This Book
Corresponding editions of this textbook are also available below:
Microelectronics: Circuit Analysis And Design
3rd Edition
ISBN: 9780071254434
Microelectronics Circuit Analysis and Design
4th Edition
ISBN: 9780071289474
MICROELECTRONICS CIRCUIT PACKAGE
4th Edition
ISBN: 9780078007972
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Microelectronics Circuit Analysis and Design
4th Edition
ISBN: 9780077387815
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