(a)
The reference current
(a)
Answer to Problem 10.51P
Explanation of Solution
Given:
The circuit parameters are
The transistor parameters are
Calculation:
Consider the circuit shown below.
Transistor
Also,
From equation substitute the value of
Also,
The reference current is,
Conclusion:
(b)
The load current
(b)
Answer to Problem 10.51P
Explanation of Solution
Given:
The circuit parameters are
The transistor parameters are
Calculation:
Consider the given circuit as shown below.
The transistor
From equation (1) put the value of
Also,
Now the load current is,
The load resistance will be,
Now the load current for
Now the change in load current,
Conclusion:
(c)
The load current
(c)
Answer to Problem 10.51P
Explanation of Solution
Given:
The circuit parameters are
The transistor parameters are
Calculation:
Consider the given circuit as shown below.
The transistor
From equation (1) put the value of
Also,
Now the load current is,
The load resistance will be,
Now the load current for
Now the change in load current,
Conclusion:
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Chapter 10 Solutions
Microelectronics: Circuit Analysis and Design
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- Design a common emitter amplifier for a Vout of+-6.3V. Vcc is set to 9V. At x=1, Av=12.6 V/V and the dynamic range from 6.3V to -6.3V. Rout must be less than 100 ohms and Rin must be higher than 100 kohmsarrow_forwardUsing the small signal equivalent model, find the input and output impedance of such E-MOSFET circuit.arrow_forwardCoonsider the common emitter amplifier shown in figure below. Assume a β of 100, VBE = 0.7V, VT = 25mA and VA = 100V. Draw an equivalent DC model and determine the rπ, transconductance (gm) and ro. Draw an equaivalent AC model using the small-signal model Find an expression for vbe and vo in terms of the input voltagearrow_forward
- I. If a sinusoidal signal voltage of 6V ( pp ) is applied to each amplifier in the figure below , what are their output voltages ( draw ) and what is their phase relationship with respect to the inputs ?arrow_forward2. This is a small signal problem. Suppose the MOSFETS drawn have lp = 1 mA when VGS = 2.5 V, and Vth = 0.5 V. Suppose the BJTs drawn have Ic = 1 mA when VBE = 0.7 V. Av VDD = 5V VDD VDD T T Rc = 1 kn Vin RB2 = 10 kn RB1 = 10 kn w/li w Rp = 1 kn R₁ Vout (a) Derive voltage gain Ay and input impedance Zin assuming R₁ ➡8. (b) Plot Ay as a function of R, assuming R, is attached between Vout and ground. (c) Rederive Ay and Zin assuming Roo and after swapping the BJT and MOSFET. RLarrow_forwardConsider the emitter follower in Figure 1 with VCC = 10V, I = 100 mA, and RL = 100Ω. (a) Find the power dissipated in Q1 and Q2 under quiescent conditions. (vO = 0V) (b) For a sinusoidal output voltage of maximum possible amplitude (neglecting VCEsat), find the average power dissipation in Q1 and Q2. Also find the load power.arrow_forward
- 35. The ac schematic of an NMOS common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the n- channel MOSFET M, the Transconductance 9m = 1mA/V, and body effect and channel length modulation effect are to be neglected. The lower cutoff frequency in Hz of the circuit is approximately at RD 10 ΚΩ M C 1μF R10 ΚΩarrow_forwardB) C) D) L=8arrow_forwardIn the following problem we want to calculate an N-type MOSFET transistorparameters when body is connected to the source. The W/L = 10 for the device,and ignore channel length modulation. a)Based on triode and saturation equations that you learned in the class, plotdrain current versus drain voltage, when source is grounded and Vgs = 0.5,1, and 3V. Sweep the drain voltage from 0 V to 3 V. This plot is calledOutput characteristics of a transistor. Highlight the point where transistorsregion is switched from triode region into saturation.arrow_forward
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