Concept explainers
The circuit in Figure P 10.56 is a PMOS version of a two-transistor MOScurrent mirror. Assume transistor parameters of
(a)
The value of
Answer to Problem 10.56P
Explanation of Solution
Given:
The circuit parameters are
The transistor parameters are
Calculation:
The given circuit is
The transistor
Now,
Put the value of
From equation (2) and (3),
Now the reference current will be
Now calculate output current by using aspect ratio.
Conclusion:
(b)
The largest value of
Answer to Problem 10.56P
Explanation of Solution
Given:
The circuit parameters are
The transistor parameters are
Calculation:
The given circuit is
The transistor
Now,
Put the value of
From equation (2) and(3),
Now the reference current will be
Now calculate output current by using aspect ratio.
Calculate the largest value of R when
According to Ohm’s law,
Also,
From equation (4) and (5),
Conclusion:
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Chapter 10 Solutions
Microelectronics: Circuit Analysis and Design
- 2. This is a small signal problem. Suppose the MOSFETS drawn have lp = 1 mA when VGS = 2.5 V, and Vth = 0.5 V. Suppose the BJTs drawn have Ic = 1 mA when VBE = 0.7 V. Av VDD = 5V VDD VDD T T Rc = 1 kn Vin RB2 = 10 kn RB1 = 10 kn w/li w Rp = 1 kn R₁ Vout (a) Derive voltage gain Ay and input impedance Zin assuming R₁ ➡8. (b) Plot Ay as a function of R, assuming R, is attached between Vout and ground. (c) Rederive Ay and Zin assuming Roo and after swapping the BJT and MOSFET. RLarrow_forwardVi RB Vcc Rc our A BJT (B=200) is implemented in an amplifier circuit, with a VCC of 15 volts. One wishes to set the Q point at IC = 5.76 mA and VCE = 6.73 volts (DC). Determine RB.arrow_forward35. The ac schematic of an NMOS common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the n- channel MOSFET M, the Transconductance 9m = 1mA/V, and body effect and channel length modulation effect are to be neglected. The lower cutoff frequency in Hz of the circuit is approximately at RD 10 ΚΩ V₁o M C 1uF R 10 ΚΩarrow_forward
- Coonsider the common emitter amplifier shown in figure below. Assume a β of 100, VBE = 0.7V, VT = 25mA and VA = 100V. Draw an equivalent DC model and determine the rπ, transconductance (gm) and ro. Draw an equaivalent AC model using the small-signal model Find an expression for vbe and vo in terms of the input voltagearrow_forwardExample 7 For the circuit shown, use R1=R2=47k2, RE=5.7k 22, RC=3.3k , RL=10k 2 and Vcc=12V, VBE=0.7V, B=100, IB=8.48uA 1-Draw the DC equivalent circuit. 2-Find the required parameter for the AC small signal model. 3-Draw the small signal model 4-Calculate the voltage gain. 5-Find the input impedance. 6-Find the output impedance. IB=8.84uA, IC=0.884mA, gm-35.36mA/V r=2.828KM. Usig Rin Gain=- 87.74, Rin=2.524k , Rout=3.3k Vcc R₁ R₂ Rc RE RL ww V Voarrow_forwardIn the following problem we want to calculate an N-type MOSFET transistorparameters when body is connected to the source. The W/L = 10 for the device,and ignore channel length modulation. a)Based on triode and saturation equations that you learned in the class, plotdrain current versus drain voltage, when source is grounded and Vgs = 0.5,1, and 3V. Sweep the drain voltage from 0 V to 3 V. This plot is calledOutput characteristics of a transistor. Highlight the point where transistorsregion is switched from triode region into saturation.arrow_forward
- Vsis (~ Q3 (a) What is the advantage of using MOSFET as compared to BJT at the first stage of multi-stage amplifier? Rais 600 02 www Z₁ (b) Describe the function of the capacitor for the following condition: (1) (ii) SEEE/SKEE 1073 (c) The transistors parameters in Figure Q.3 are given as follow: BJT (iv) ↑ B-350, VBE 0.7 V, Ic=0.3 mA, VT 26 mV, and ro=00 E-MOSFETk 0.8 mA/V², VT- Vas(T) = 1 V C₁ HE a capacitor between stage 1 and stage 2 of a RC-coupled amplifier. bypass capacitor which is commonly used in small signal amplifier. (i) Draw the ac equivalent circuit at middle frequency for circuit in Figure Q.3 by using hybrid-x model. (ii) Determine the values of Z., Ziz and Zo. (iii) Calculate the gain, v/v, in decibel (dB). Draw and label the waveforms vo when v=2 sin 50t [mV] for one complete cycle. + Roi 50 ΚΩ Vi Ra 6 kn Ro 4.5 k Q₁ Rs 3 kQ C₂ не +15 V DS ↑ 22 R₁ 75 k R₂ 9 kn Figure Q.3 Multistage amplifier circuit Re RE 2kQ Rez 1kQ ← 2₂ -C₁ R₂ 20k2 %arrow_forward35. The ac schematic of an NMOS common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the n- channel MOSFET M, the Transconductance 9m = 1mA/V, and body effect and channel length modulation effect are to be neglected. The lower cutoff frequency in Hz of the circuit is approximately at RD 10 ΚΩ M C 1μF R10 ΚΩarrow_forward1. Suppose the MOSFET drawn has Vth = 1 V, and ID = 1 mA when Vov = 0.5 V. Vin Vin VDD = 5V I R₂ = 5 kn Vout Vs.VD. VDD t t (a) Calculate the Vin values that lead to off, linear, and saturation modes respectively. Indicate the boundaries of these regions on the Vin plot. (b) Draw a suitable 100 mV amplitude sinusoid for Vin that keeps the MOSFET working in saturation mode. (c) Draw three time-domain waveforms for VS, VD, VDD that correspond to Vin from part (b).arrow_forward
- Discuss the significant different between the construction of an E-MOSFET and a D-MOSFET.arrow_forwardConsider a MOSFET circuit with transistor parameters VTN=0.8V, KN=0.85 mA/V and A=0.02V-1. i) Determine Rs and RD such that IDo=0.15mA and VDSQ=5.5V ii) Calculate the small signal parameters i) Draw the small signal equivalent circuit and determine the voltage gain. +5V RD Co O +Vo +Vi RL=50K VGs RG Rs -5V Figure Q4barrow_forwardcan you solve it before 10 minarrow_forward
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