Concept explainers
The value of
Answer to Problem 10.60P
Explanation of Solution
Given:
Calculation:
The given circuit is,
Current through transistors
Consider equation (2)
Now on considering equation (3),
From the circuit,
On substituting the given value,
Substitute
Substitute
Now calculate
Hence
Now calculate
Conclusion:
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Chapter 10 Solutions
Microelectronics: Circuit Analysis and Design
- Design a common-emitter amplifier to provide a small-signal voltage gain of approximately -10. 1. Consider the circuit shown in Figure 1. Show the following calculations in your notebook: Calculate a value for Rc so that A, z –10 Calculate values for R1 and R2 so that the circuit is bias stable and near the center of the load line. (Note: Use the datasheet for the 2N5209 transistor to make your calculations more accurate). Vcc = 10 V R1 Rc Cc2 Cci RL Vs R, REj = 499 Q Figure 1: Common-emitter amplifier for part #1arrow_forwardA Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.arrow_forwardConsider the emitter follower in Figure 1 with VCC = 10V, I = 100 mA, and RL = 100Ω. (a) Find the power dissipated in Q1 and Q2 under quiescent conditions. (vO = 0V) (b) For a sinusoidal output voltage of maximum possible amplitude (neglecting VCEsat ), find the average power dissipation in Q1 and Q2. Also find the load power.arrow_forward
- Q1. The output characteristic of a typical transistor is shown below, where the quiescent point is selected on it. This transistor is used in the bias circuit presented below. Find the suitable values of Rg and Rc to fix the Q-point of the circuit properly. +Vcc = 12 V 12- Is = 70 uA 10- Ig = 60 uA 8- Rc Is = 50 uA Rs 6- Ig= 40 uA 4. Is = 30 uĄ Is = 20 uA B = 100 2- VBE = 0.7 V 0- -2- 2 4 6 8 10 12 14 16 VCE (V) Ic (mA)arrow_forwardIn the figure, A characteristics curve is shown for the MOSFET. Determine the following outcome and parameters using the values given in the characteristics: i) Find the Ip for the VGs = 4V, where IGs(ON) = 4.5mA ii) Find the transconductence of MOSFET; where, MOSFET having the bias voltage VGs = 4V, and 6V. %3D A (mA) A5 (mA) 10 10 VGs=+8 V 9. 7 .7 VGs =+7 V 6 5 Vas=+6 V 4 VGs =+5 V 2 VGs =+4 V Vas =+3 V 1 3 4. 5 8 Vas 10 15 20 25 Vos Vas = VT=2 V a coarrow_forward31 The circuit shown in Figure P10.31 is a common-emitter amplifier stage. Determine the Thévenin equivalent of the part of the circuit containing R1, R2, and Væ with respect to the terminals of R2. Redraw the schematic, using the Thévenin equivalent. Vcc = 20 V B = 130 R = 1.8 M2 R2 = 300 k2 %3D Rc = 3 k2 Rg = 1 k2 %3D %3D R = 1 k2 Rs = 0.6 k2 vs = 1 cos(6.28 x 103t) mV Rc R1 Vcc R1EV. RS R2 V's Vị REarrow_forward
- Using LTSpice, simulate the circuit below, use 2N3904 for the transistor. Part ! DC simulation: Measure VCE and Ic. Use .op for the simulation cmd. Remove all capacitors and input signals first. Part 2 AC simulation: Connect all capacitors now and apply an AC signal at the input with an amplitufe of 1mV and a frequency of 1kHz. Determine the Voltage gain of the circuit by dividing Vo with Vin. Show the output for both the DC and AC analysis. Take a screenshot of the circuit and the output voltages and waveforms. Paste in a word file, write your answers, then save as pdf. 50 kΩ Σ 20 0,5 ΚΩ wwwh 9 Vcc=20 V Ca=1 µF = Cc₂ Cg=50 μF 5.6 kn B=100 Ca IST • 3.3 ΚΩ 5 ΚΩΣ CEarrow_forwardI. If a sinusoidal signal voltage of 6V ( pp ) is applied to each amplifier in the figure below , what are their output voltages ( draw ) and what is their phase relationship with respect to the inputs ?arrow_forward2) Consider the circuit given below. (Assume: K-4mA/V', Vt=-1V, A=0, (K= µCox.(W/L)) da Perform DC analysis and calculate Va. Vsg, Vs, voltages, and Ip, gm, ro values bo Draw a small-signal equivalent circuit Co Calculate Av, Rin, Rout values as shown on the schematic Also ) satwaton mode Test for Fill inthe table VG VSG O2m A Rin Vs QUin ID vo Coo 9m Ro Av Rout Rin Routarrow_forward
- 34 Shown in Figure P10.34 is a common-emitter amplifier stage implemented with an npn silicon transistor. The DC bias circuit connected to the base consists of a single resistor; however, it is connected directly between base and collector. Determine VCEQ and the region of operation. Vcc = 12 V B = 130 Rg = 325 k2 Rc = 1.9 k2 Rg = 2.3 k2 R = 10 k2 Rs = 0.5 k2 vs = 1 cos(6.28 × 10°t) mV Rc Vc RE RE R1arrow_forwardUsing the small signal equivalent model, find the voltage gain Vo/vi of such E-MOSFET circuit. Neglect impedance due to capacitors by assuming these to be short circuit on AC analysis. Kn =4 mA/V2, and VTh = 2Varrow_forward........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configurationarrow_forward
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,