Design a bipolar cascode amplifier with a cascode active load similar tothat in Figure P10.89 except the amplifying transistors are to be pnp andthe load transistors are to be npn. Bias the circuit at
The design of a circuit for a given specifications.
To find: The small-signal voltage gain
Answer to Problem D10.90P
The design is shown in Figure 2.
Explanation of Solution
Given:
Calculation:
The given circuit is,
Figure 1
The equivalent designed circuit for active load amplifier is as shown,
Figure 2
The expression for input voltage
Now expression for output resistance is,
Put equation (3) in equation (2).
Consider
Now expression for hybrid resistor parameter.
Now output voltage will be,
Consider
Put value from equation (8) to equation (6).
Put
Now
Substitute the value for
Now
Substitute the derived values in equation (10).
Want to see more full solutions like this?
Chapter 10 Solutions
Microelectronics: Circuit Analysis and Design
- 5) Design a Common source E-MOSFET amplifier and write the formula of voltage gain.arrow_forward2. The circuit in Figure 2 has a BJT transistor with B= 200, VA = 20 V. Determine BJT DC collector current and DC collector voltage. Determine the small-signal input resistance seen by the AC voltage source, the output resistance at Vout, and the transfer function Vout/Vin. HH 1.7 V 100k Figure 2, Problem 2 10 V 2k Vout 2karrow_forwardWith the help of circuit diagrams, list the different biasing methods for D- MOSFET and E-MOSFET amplifiers.arrow_forward
- The amplifier circuit below has a single ac input and two ac outputs. Assuming transistor parameters of B= 100 and VBE - 0.6 V: a) Determine the Q point. b) Is the transistor in the active region? Explain thoroughly. c) Construct the T-model of the transistor with all parameters labelled and evaluated. Assume room temperature. d) Draw a complete small signal circuit model, then find the voltage gain for both outputs. e) Based on the analysis results, what is the function of this circuit? Suggest a proper application. 3) Assuming that each output is feeding a 50-k2 resistor, determine the total voltage gain and current gain for both outputs. Also, caleulate the amplifier input resistance and the amplifier output resistances. 10 V 10 V Rc= 3.3 kl 100 kn 8. 50 kn RE = 3 kſ2 3D!arrow_forward(b) The multistage amplifier circuit of Figure Q.2(b) have the following parameters: Qı and Q2: B= 200, VBE = 0.7 V, VT = 26 mV , VA=∞ Given that Icọ1 = 2 mA and VCEQ1 = 2 V. (i) Determine the value for R84. List the assumption/approximation made in the analysis. (ii) Sketch and label the small-signal hybrid-t equivalent circuit at midband frequency range. (iii) Calculate the small signal hybrid-n model parameters: gm and ra for Qı and Then, determine Zi2 and Zo. VSI (iv) Find +15 V TU MA RBI 100 k2 UNIVERSITI { Rc 3.3 k2 RB3 10 kN IcQI Q2 C4 Qi VCEQI Ro TEO ► 50 k2 Rs 100 2 RL V. 10k2 RE 2 kN RB4 C3 Zi2 Z, Figure Q.2(b) AYSIAarrow_forward2) Consider an enhancement MOSFET common source amplifier circuit in Figure 2(a). The output characteristic is showed in Figure 2(b). Assume that the circuit is operating in the saturation region and k = 5 mA/V2. It also given that ra = ro = 00, Cgd = 2 pF, Cgs = 4 pF, Cas = 1 pF, Cwi = 4 pF and Cwo = 3pF. a. Using DC load line, prove that Ino = 22.5 mA and VpsQ = 5.5 V for Vaso = 2.5V. (Please attach the characteristic graph provided in your working solution) b. Draw the AC equivalent circuit at mid frequency. c. Estimate the voltage gain Av = Vo /Vi. d. Determine the dominant high cut – off frequency for the circuit. 10 V Rp 100 2 6 MQ C2 ci Rs RL Vo 1002 R: 5002 Rs Vo 14 MQ Cs 100 2 Vs Figure 2(a) 60- 50 30 20 10 9. 10 Figure 2(b) (yu) 4arrow_forward
- Question 2 Referring to Figure 2 and the following BJT parameters: B = 100, thermal voltage = 25 mV and VeE = 0.7 V. If v = (Mx10°)sin(wt) V where M is , 209384 . calculate the instantaneous positive peak collector voltage, Ve(peak). Explain the effect of CE on the BJT DC operating point and the small- signal voltage gain. Vcc 10V Rc $4.7 kN R 47 ko3 HE vo B-100 Vehermar=25mv R. 10 kn R $ika T10UF GND Figure 2arrow_forwardWhat are the advantages of active load with respect to passive load in transistors? Write down at least 5 advantages.arrow_forwardDesign a voltage divider biased CE stage with emitter degeneration. That stage should support a voltage gain of 5 and an input impedance larger than 3 KOhms with a bias current of 0.5 mA. Assume Beta=100, Is = 5e-17. Neglect the early voltage effect. You also need to provide values for the operating point of this transistor. Find the output resistance of this stage if the early voltage = 20 V.arrow_forward
- "Below is a small signal equivalent circuit model considering the early effect of the BJT. Find the input resistance, output resistance, and voltage gain." Rout Rc R gm Ube R.R re ± Vi RE Voarrow_forwardA transistor amplifier which uses a npn BJT and various passive components is shown in figure Q1. A table of components values is shown in Table Q1. For this amplifier: a) Calculate the following dc voltages and currents; VB, VE, le and le. b) Draw a r parameter ac small-signal model. The model should be correctly labelled with transistor voltages and all small-signal parameters. Detail assumptions and limitations. c) Calculate the small-signal input resistance Rin, output resistance Rout and output voltage Vout. Detail assumptions and limitations. d) Calculate the small-signal voltage and current gain Av and A. Also calculate the output voltage. Vcc R3 R. R: Figure Q1 R3 = 2 kQ Vin = 10 mV Table of Component values and Transistor Parameters R2 = 10 kQ VT = 24 mV R1 = 40 kQ R4 = 1 kQ VBE = 0.7 V B = 200 %3D Vcc = 10 V C=2mFarrow_forwardLecturer Karrar Al bayat = Consider the circuit shown in Figure below with transistor parameters ß 120 and VA =00. (a) Determine the small-signal parameters gm, I, and to for both transistors. (b) Plot the dc and ac load lines for both transistors. (c) Determine the overall small-signal voltage gain Av = vo/vs. (d) Determine the input resistance R₁, and the output resistance R.. (e) Determine the maximum Vcc=+12 V undistorted swing in the output voltage. < R₁ = < 67.3 ΚΩ R₂ = Σ 15 ΚΩ Ro R₂ = R₁= 12.7 K 345 ΚΩ Ris Co RC1 = ΤΟ ΚΩ "98 21 REL= <2k2=CE 22 CC3 RE2= RL= 1.6 kΩ < 250 Ω -OUarrow_forward
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,