Consider Design Example 10.8. Assume transistor parameters of k ′ n 1 = 100 μ A / V 2 , k ′ n 2 = 105 μ A / V 2 , k ′ n 3 = 95 μ A / V 2 , V T N 1 = 0.38 V , V T N 2 = 0.40 V , V T N 3 = 0.42 V , and λ 1 = λ 2 = λ 3 = 0 . (a) Using the designed values of W / L foreach transistor, determine the values of I R E F and I O . (b) What is the percent changein I R E F and I O from Example 10.8? (Ans. (a) I R E F = 95.93 μ A , I O = 54.43 μ A ;(b) − 4.06 % , − 9.28 % )
Consider Design Example 10.8. Assume transistor parameters of k ′ n 1 = 100 μ A / V 2 , k ′ n 2 = 105 μ A / V 2 , k ′ n 3 = 95 μ A / V 2 , V T N 1 = 0.38 V , V T N 2 = 0.40 V , V T N 3 = 0.42 V , and λ 1 = λ 2 = λ 3 = 0 . (a) Using the designed values of W / L foreach transistor, determine the values of I R E F and I O . (b) What is the percent changein I R E F and I O from Example 10.8? (Ans. (a) I R E F = 95.93 μ A , I O = 54.43 μ A ;(b) − 4.06 % , − 9.28 % )
Consider Design Example 10.8. Assume transistor parameters of
k
′
n
1
=
100
μ
A
/
V
2
,
k
′
n
2
=
105
μ
A
/
V
2
,
k
′
n
3
=
95
μ
A
/
V
2
,
V
T
N
1
=
0.38
V
,
V
T
N
2
=
0.40
V
,
V
T
N
3
=
0.42
V
, and
λ
1
=
λ
2
=
λ
3
=
0
. (a) Using the designed values of
W
/
L
foreach transistor, determine the values of
I
R
E
F
and
I
O
. (b) What is the percent changein
I
R
E
F
and
I
O
from Example 10.8? (Ans. (a)
I
R
E
F
=
95.93
μ
A
,
I
O
=
54.43
μ
A
;(b)
−
4.06
%
,
−
9.28
%
)
4. For the transistor in the figure shown below, the parameters are ß = 100 and VÀ = ∞.
a. Design the circuit such that lEQ = 1mA and the Q-pt is in the center of the dc load line.
b. If the peak-to-peak sinusoidal output voltage is 4V, determine the peak-to-peak sinusoidal
signals at the base of the transistor and the peak-to-peak value of Vs.
If the load resistor R₁ = 1kQ is connected to the output through a coupling capacitor,
determine the peak-to-peak value in the output voltage, assuming vs is equal to the value
determined in part (b).
Vcc=+10 V
www
Rs = 0.7 kΩ
Cc
www
RB
RE
vo
N-channel Mosfet compared to P channel mosfetWhich of the following is true?A) It is faster.B) It has a lower input impedance.C) It has a lower noise level.D) none
5V
B
OV
OV
For all the MOSFETS assume Vth=1V
and k =50 mA/V²
R₁ = 4700
Ao
M₁
M₂
B
Indicate and verify the state of each MOSFET and Vo for the following input combinations. Fill
out the table for each assumed state of the MOSFET for every input combination. Use Rds(on)
approximation for linear operation and three significant figures for the voltages.
M1 is assumed to be in saturation.
If Vgs = 2 V, Vds = 4V,
Vds > Vgs - Vth
4>2-1
4> 1 (ok)
Vgs > Vth (2>1)
A
M2 state
M3 state
V.
0
OV
5 V
R₂ = 560Ω
5V
M1 state
M3
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