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A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of NA 2X1015/cm³ and an n-side doping of ND=1015/cm³. Compare a) Vbi b) Xp, Xn, and W c) ɛ at x=0 d) V at x=0 Make sketches that are roughly to scale of the charge density, electric field, and electrostatic potential as a function of position.

A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of NA 2X1015/cm³ and an n-side doping of ND=1015/cm³. Compare a) Vbi b) Xp, Xn, and W c) ɛ at x=0 d) V at x=0 Make sketches that are roughly to scale of the charge density, electric field, and electrostatic potential as a function of position.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of NA 2X1015/cm³ and an n-side doping of ND=1015/cm³. Compare a) Vbi b) Xp, Xn, and W c) ɛ at x=0 d) V at x=0 Make sketches that are roughly to scale of the charge density, electric field, and electrostatic potential as a function of position.
Transcribed Image Text:A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of NA 2X1015/cm³ and an n-side doping of ND=1015/cm³. Compare a) Vbi b) Xp, Xn, and W c) ɛ at x=0 d) V at x=0 Make sketches that are roughly to scale of the charge density, electric field, and electrostatic potential as a function of position.
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