Chapter 1, Problem 1.19P

(a) Determine the built−in potential barrier $V_{bi}$ in a silicon pn junction for (i) $N_d=N_a=5\times {10}^{15}{\text{cm}}^{-3}$ ; (ii) $N_d=5\times {10}^{17}{\text{cm}}^{-3}$ and $N_a={10}^{15}{\text{cm}}^{-3}$ ; (iii) $N_a=N_d={10}^{18}{\text{cm}}^{-3}$ . (b) Repeat part (a) for GaAs.