Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Videos
Textbook Question
Chapter 1, Problem 1.14TYU
The diffusion resistance of a pn junction diode at
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
Diode circuitsFor each circuit below, use the diode approximation with forward dropVF= 0.7 V to find the output voltage. No current flows to the output.
Determine the negative resistance for the tunnel diode in the figure between ?T = 0.2 ? and ?T = 0.4
Consider a silicon PN step junction diode with Assume T = 300 K.
Chapter 1 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Calculate the majority and minority carrier...Ch. 1 - Consider ntype GaAs at T=300K doped to a...Ch. 1 - Consider silicon at T=300K . Assume the hole...Ch. 1 - Determine the intrinsic carrier concentration in...Ch. 1 - (a) Consider silicon at T=300K . Assume that...Ch. 1 - Using the results of TYU1.2, determine the drift...Ch. 1 - The electron and hole diffusion coefficients in...Ch. 1 - A sample of silicon at T=300K is doped to...Ch. 1 - (a) Calculate Vbi for a GaAs pn junction at T=300K...
Ch. 1 - A silicon pn junction at T=300K is doped at...Ch. 1 - (a) A silicon pn junction at T=300K has a...Ch. 1 - (a) Determine Vbi for a silicon pn junction at...Ch. 1 - A silicon pn junction diode at T=300K has a...Ch. 1 - Recall that the forwardbias diode voltage...Ch. 1 - Consider the circuit in Figure 1.28. Let VPS=4V ,...Ch. 1 - (a) Consider the circuit shown in Figure 1.28. Let...Ch. 1 - The resistor parameter in the circuit shown in...Ch. 1 - Consider the diode and circuit in Exercise EX 1.8....Ch. 1 - Consider the circuit in Figure 1.28. Let R=4k and...Ch. 1 - The power supply (input) voltage in the circuit of...Ch. 1 - (a) The circuit and diode parameters for the...Ch. 1 - Determine the diffusion conductance of a pn...Ch. 1 - Determine the smallsignal diffusion resistance of...Ch. 1 - The diffusion resistance of a pn junction diode at...Ch. 1 - A pn junction diode and a Schottky diode both have...Ch. 1 - Consider the circuit shown in Figure 1.45....Ch. 1 - Consider the circuit shown in Figure 1.46. The...Ch. 1 - A Zener diode has an equivalent series resistance...Ch. 1 - The resistor in the circuit shown in Figure 1.45...Ch. 1 - Describe an intrinsic semiconductor material. What...Ch. 1 - Describe the concept of an electron and a hole as...Ch. 1 - Describe an extrinsic semiconductor material. What...Ch. 1 - Describe the concepts of drift current and...Ch. 1 - How is a pn junction formed? What is meant by a...Ch. 1 - How is a junction capacitance created in a...Ch. 1 - Write the ideal diode currentvoltage relationship....Ch. 1 - Describe the iteration method of analysis and when...Ch. 1 - Describe the piecewise linear model of a diode and...Ch. 1 - Define a load line in a simple diode circuit.Ch. 1 - Under what conditions is the smallsignal model of...Ch. 1 - Describe the operation of a simple solar cell...Ch. 1 - How do the i characteristics of a Schottky barrier...Ch. 1 - What characteristic of a Zener diode is used in...Ch. 1 - Describe the characteristics of a photodiode and a...Ch. 1 - (a) Calculate the intrinsic carrier concentration...Ch. 1 - (a) The intrinsic carrier concentration in silicon...Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Find the concentration of electrons and holes...Ch. 1 - Gallium arsenide is doped with acceptor impurity...Ch. 1 - Silicon is doped with 51016 arsenic atoms/cm3 ....Ch. 1 - (a) Calculate the concentration of electrons and...Ch. 1 - A silicon sample is fabricated such that the hole...Ch. 1 - The electron concentration in silicon at T=300K is...Ch. 1 - (a) A silicon semiconductor material is to be...Ch. 1 - (a) The applied electric field in ptype silicon is...Ch. 1 - A drift current density of 120A/cm2 is established...Ch. 1 - An ntype silicon material has a resistivity of...Ch. 1 - (a) The applied conductivity of a silicon material...Ch. 1 - In GaAs, the mobilities are n=8500cm2/Vs and...Ch. 1 - The electron and hole concentrations in a sample...Ch. 1 - The hole concentration in silicon is given by...Ch. 1 - GaAs is doped to Na=1017cm3 . (a) Calculate no and...Ch. 1 - (a) Determine the builtin potential barrier Vbi in...Ch. 1 - Consider a silicon pn junction. The nregion is...Ch. 1 - The donor concentration in the nregion of a...Ch. 1 - Consider a uniformly doped GaAs pn junction with...Ch. 1 - The zerobiased junction capacitance of a silicon...Ch. 1 - The zerobias capacitance of a silicon pn junction...Ch. 1 - The doping concentrations in a silicon pn junction...Ch. 1 - (a) At what reversebias voltage does the...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - A silicon pn junction diode has an emission...Ch. 1 - Plot log10ID versus VD over the range 0.1VD0.7V...Ch. 1 - (a) Consider a silicon pn junction diode operating...Ch. 1 - A pn junction diode has IS=2nA . (a) Determine the...Ch. 1 - The reversebias saturation current for a set of...Ch. 1 - A germanium pn junction has a diode current of...Ch. 1 - (a)The reversesaturation current of a gallium...Ch. 1 - The reversesaturation current of a silicon pn...Ch. 1 - A silicon pn junction diode has an applied...Ch. 1 - A pn junction diode is in series with a 1M...Ch. 1 - Consider the diode circuit shown in Figure P1.39....Ch. 1 - The diode in the circuit shown in Figure P1.40 has...Ch. 1 - Prob. 1.41PCh. 1 - (a) The reversesaturation current of each diode in...Ch. 1 - (a) Consider the circuit shown in Figure P1.40....Ch. 1 - Consider the circuit shown in Figure P1.44....Ch. 1 - The cutin voltage of the diode shown in the...Ch. 1 - Find I and VO in each circuit shown in Figure...Ch. 1 - Repeat Problem 1.47 if the reversesaturation...Ch. 1 - (a) In the circuit Shown in Figure P1.49, find the...Ch. 1 - Assume each diode in the circuit shown in Figure...Ch. 1 - (a) Consider a pn junction diode biased at IDQ=1mA...Ch. 1 - Determine the smallsignal diffusion resistancefor...Ch. 1 - The diode in the circuit shown in Figure P1.53 is...Ch. 1 - The forwardbias currents in a pn junction diode...Ch. 1 - A pn junction diode and a Schottky diode have...Ch. 1 - The reversesaturation currents of a Schottky diode...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - (a) The Zener diode in Figure P1.57 is ideal with...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - The Output current of a pn junction diode used as...Ch. 1 - Using the currentvoltage characteristics of the...Ch. 1 - (a) Using the currentvoltage characteristics of...Ch. 1 - Use a computer simulation to generate the ideal...Ch. 1 - Use a computer simulation to find the diode...Ch. 1 - Design a diode circuit to produce the load line...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- How is a solid-state diode tested? Explain.arrow_forwardWe know that the Si-diode will pass the current in a forward biased region. This behavior is useful for many applications. C)Plot the V-I Characteristic Curve of the diode.arrow_forwardDetermine the voltage across the diode in the figure below, using the complete diode model with: r'd = 10-? and r'R = 100-M? a. The value of the forward current. (in Amperes) b. The value of the forward voltage. c. The value of the voltage across the diode.arrow_forward
- Please write neatly, and show your work, thanks Please answer in typing format solution please only typing format solution please Please I will like itarrow_forwardA germanium diode carries a current of 1 mA at room temperature when a forward bias of 0.15v is applied. Estimate the reverse saturation current at room temperature.arrow_forwardSolve it quickly pleasearrow_forward
- Consider diode circuit shown below with Vcc=5V and V₂ = 3V. U₁A HH +V₂ ū The peak inverse voltage on the diode is close to V₁ V. A Voarrow_forwardConsider a silicon pn junction diode at T 300K. The reverse saturation current is Is = 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.573 V and use that to determine the DC and AC resistance of the diode. RDC = 14.13 k rac = 639 Q RDC = 234 Q2 = rac=8Q RDC = 7.00 KQ rac = 307 Q RDC = 1.43 kQ rac = 58 Qarrow_forwardIn the circuit shown below, the ideality factorn of the diode is unity and the voltage drop across it is 0.7 V. The dynamic resistance of the diode at room temperature is approximately 1.7 V 31 k2arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Three-Phase Half-Wave Rectifier Operation; Author: katkimshow;https://www.youtube.com/watch?v=Uhbr6tbMB9A;License: Standard Youtube License