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lonization energy of dopants in semiconductors lonization energy of shallow donors and acceptors can be evaluated using hydrogenic model: lonization energy E Hion and orbital radius a, of hydrogen atom Hydrogen Atom moe4 EHion = 13.6 eV a = 8ε²h² Απερη mee² = 5.2918 x 10-11 m lonization energy Eion and orbital radius D,A of donors and acceptors electron m* e4 Eion = ~50 meV 8K² &²h² 4πεερη2 "D,A 1 nm m*e² Orbit of an electron bound to a donor in a semiconductor crystal. Energy levels of donors and acceptors Conduction Band ↓ Ec -Ed Donor Level Donor ionization energy Acceptor ionization energy Acceptor Level Εα Ev Valence Band Ionization energy of selected donors and acceptors in silicon Donors Acceptors Dopant Sb P As B Al In Ionization energy, Ec-Ed or Ea-E, (meV) 39 44 54 45 57 160 Hydrogenic model of donors and acceptors Calculate the ionization energies and orbit radii of donors and acceptors in Si and Ge. Dielectric constant of silicon is k = 11.7. Dielectric constant of germanium is x = 16.2.

lonization energy of dopants in semiconductors lonization energy of shallow donors and acceptors can be evaluated using hydrogenic model: lonization energy E Hion and orbital radius a, of hydrogen atom Hydrogen Atom moe4 EHion = 13.6 eV a = 8ε²h² Απερη mee² = 5.2918 x 10-11 m lonization energy Eion and orbital radius D,A of donors and acceptors electron m* e4 Eion = ~50 meV 8K² &²h² 4πεερη2 "D,A 1 nm m*e² Orbit of an electron bound to a donor in a semiconductor crystal. Energy levels of donors and acceptors Conduction Band ↓ Ec -Ed Donor Level Donor ionization energy Acceptor ionization energy Acceptor Level Εα Ev Valence Band Ionization energy of selected donors and acceptors in silicon Donors Acceptors Dopant Sb P As B Al In Ionization energy, Ec-Ed or Ea-E, (meV) 39 44 54 45 57 160 Hydrogenic model of donors and acceptors Calculate the ionization energies and orbit radii of donors and acceptors in Si and Ge. Dielectric constant of silicon is k = 11.7. Dielectric constant of germanium is x = 16.2.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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lonization energy of dopants in semiconductors lonization energy of shallow donors and acceptors can be evaluated using hydrogenic model: lonization energy E Hion and orbital radius a, of hydrogen atom Hydrogen Atom moe4 EHion = 13.6 eV a = 8ε²h² Απερη mee² = 5.2918 x 10-11 m lonization energy Eion and orbital radius D,A of donors and acceptors electron m* e4 Eion = ~50 meV 8K² &²h² 4πεερη2 "D,A 1 nm m*e² Orbit of an electron bound to a donor in a semiconductor crystal. Energy levels of donors and acceptors Conduction Band ↓ Ec -Ed Donor Level Donor ionization energy Acceptor ionization energy Acceptor Level Εα Ev Valence Band Ionization energy of selected donors and acceptors in silicon Donors Acceptors Dopant Sb P As B Al In Ionization energy, Ec-Ed or Ea-E, (meV) 39 44 54 45 57 160 Hydrogenic model of donors and acceptors Calculate the ionization energies and orbit radii of donors and acceptors in Si and Ge. Dielectric constant of silicon is k = 11.7. Dielectric constant of germanium is x = 16.2.
Transcribed Image Text:lonization energy of dopants in semiconductors lonization energy of shallow donors and acceptors can be evaluated using hydrogenic model: lonization energy E Hion and orbital radius a, of hydrogen atom Hydrogen Atom moe4 EHion = 13.6 eV a = 8ε²h² Απερη mee² = 5.2918 x 10-11 m lonization energy Eion and orbital radius D,A of donors and acceptors electron m* e4 Eion = ~50 meV 8K² &²h² 4πεερη2 "D,A 1 nm m*e² Orbit of an electron bound to a donor in a semiconductor crystal. Energy levels of donors and acceptors Conduction Band ↓ Ec -Ed Donor Level Donor ionization energy Acceptor ionization energy Acceptor Level Εα Ev Valence Band Ionization energy of selected donors and acceptors in silicon Donors Acceptors Dopant Sb P As B Al In Ionization energy, Ec-Ed or Ea-E, (meV) 39 44 54 45 57 160 Hydrogenic model of donors and acceptors Calculate the ionization energies and orbit radii of donors and acceptors in Si and Ge. Dielectric constant of silicon is k = 11.7. Dielectric constant of germanium is x = 16.2.
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