Chapter 1, Problem 1.6EP

A silicon pn junction at $T=300\text{K}$ is doped at $N_d={10}^{16}{\text{cm}}^{-3}$ and $N_a={10}^{17}{\text{cm}}^{-3}$ . The junction capacitance is to be $C_j=0.8\text{pF}$ when a reverse−bias voltage of $V_R=5\text{V}$ is applied. Find the zero−biased junction capacitance $C_{jo}$ . (Ans. $C_{jo}=2.21\text{pF}$ )