Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 1, Problem 1.63CSP
Use a computer simulation to generate the ideal current−voltage characteristics of a diode from a reverse−bias voltage of 5 V to a forward−bias current of 1 mA, for an
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Students have asked these similar questions
Create the PLC ladder logic diagram
for the logic gate circuit displayed in
Figure 7-35. The pilot light red (PLTR)
output section has three inputs: PBR,
PBG, and SW. Pushbutton red (PBR)
and pushbutton green (PBG) are inputs
to an XOR logic gate. The output of the
XOR logic gate and the inverted switch
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The two-input AND logic gate output
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PBR
PBG
SW
TSW
PLTR
Figure 7-35. Logic gate circuit for Example 7-3.
PLTW
Goodheart-Willcox Publisher
gate. The temperature switch (TSW) is the other input to the NAND logic gate. The output generated from
the NAND logic gate is labeled pilot light white (PLTW).
Imaginary Axis (seconds)
1
6. Root locus for a closed-loop system with L(s) =
is shown below.
s(s+4)(s+6)
15
10-
0.89
0.95
0.988
0.988
-10
0.95
-15
-25
0.89
20
Root Locus
0.81
0.7
0.56
0.38
0.2
5
10
15
System: sys
Gain: 239
Pole: -0.00417 +4.89
Damping: 0.000854
Overshoot (%): 99.7
Frequency (rad/s): 4.89
System: sys
Gain: 16.9
Pole: -1.57
Damping: 1
Overshoot (%): 0
Frequency (rad/s): 1.57
0.81
0.7
0.56
0.38
0.2
-20
-15
-10
-5
5
10
Real Axis (seconds)
From the values shown in the figure, compute the following.
a) Range of K for which the closed-loop system is stable.
b) Range of K for which the closed-loop step response will not have any overshoot.
Note that when all poles are real, the step response has no overshoot.
c) Smallest possible peak time of the system. Note that peak time is the smallest
when wa is the largest for the dominant pole.
d) Smallest possible settling time of the system. Note that peak time is the smallest
when σ is the largest for the dominant pole.
For a band-rejection filter, the response drops below this half power point at two locations as visualised in Figure 7, we need to find these
frequencies. Let's call the lower frequency-3dB point as fr and the higher frequency -3dB point fH. We can then find out the bandwidth as
f=fHfL, as illustrated in Figure 7.
0dB
Af
-3 dB
Figure 7. Band reject filter response diagram
Considering your AC simulation frequency response and referring to Figure 7, measure the following from your AC simulation. 1% accuracy:
(a) Upper-3db Frequency (fH) =
Hz
(b) Lower-3db Frequency (fL) =
Hz
(c) Bandwidth (Aƒ) =
Hz
(d) Quality Factor (Q) =
Chapter 1 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Calculate the majority and minority carrier...Ch. 1 - Consider ntype GaAs at T=300K doped to a...Ch. 1 - Consider silicon at T=300K . Assume the hole...Ch. 1 - Determine the intrinsic carrier concentration in...Ch. 1 - (a) Consider silicon at T=300K . Assume that...Ch. 1 - Using the results of TYU1.2, determine the drift...Ch. 1 - The electron and hole diffusion coefficients in...Ch. 1 - A sample of silicon at T=300K is doped to...Ch. 1 - (a) Calculate Vbi for a GaAs pn junction at T=300K...
Ch. 1 - A silicon pn junction at T=300K is doped at...Ch. 1 - (a) A silicon pn junction at T=300K has a...Ch. 1 - (a) Determine Vbi for a silicon pn junction at...Ch. 1 - A silicon pn junction diode at T=300K has a...Ch. 1 - Recall that the forwardbias diode voltage...Ch. 1 - Consider the circuit in Figure 1.28. Let VPS=4V ,...Ch. 1 - (a) Consider the circuit shown in Figure 1.28. Let...Ch. 1 - The resistor parameter in the circuit shown in...Ch. 1 - Consider the diode and circuit in Exercise EX 1.8....Ch. 1 - Consider the circuit in Figure 1.28. Let R=4k and...Ch. 1 - The power supply (input) voltage in the circuit of...Ch. 1 - (a) The circuit and diode parameters for the...Ch. 1 - Determine the diffusion conductance of a pn...Ch. 1 - Determine the smallsignal diffusion resistance of...Ch. 1 - The diffusion resistance of a pn junction diode at...Ch. 1 - A pn junction diode and a Schottky diode both have...Ch. 1 - Consider the circuit shown in Figure 1.45....Ch. 1 - Consider the circuit shown in Figure 1.46. The...Ch. 1 - A Zener diode has an equivalent series resistance...Ch. 1 - The resistor in the circuit shown in Figure 1.45...Ch. 1 - Describe an intrinsic semiconductor material. What...Ch. 1 - Describe the concept of an electron and a hole as...Ch. 1 - Describe an extrinsic semiconductor material. What...Ch. 1 - Describe the concepts of drift current and...Ch. 1 - How is a pn junction formed? What is meant by a...Ch. 1 - How is a junction capacitance created in a...Ch. 1 - Write the ideal diode currentvoltage relationship....Ch. 1 - Describe the iteration method of analysis and when...Ch. 1 - Describe the piecewise linear model of a diode and...Ch. 1 - Define a load line in a simple diode circuit.Ch. 1 - Under what conditions is the smallsignal model of...Ch. 1 - Describe the operation of a simple solar cell...Ch. 1 - How do the i characteristics of a Schottky barrier...Ch. 1 - What characteristic of a Zener diode is used in...Ch. 1 - Describe the characteristics of a photodiode and a...Ch. 1 - (a) Calculate the intrinsic carrier concentration...Ch. 1 - (a) The intrinsic carrier concentration in silicon...Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Find the concentration of electrons and holes...Ch. 1 - Gallium arsenide is doped with acceptor impurity...Ch. 1 - Silicon is doped with 51016 arsenic atoms/cm3 ....Ch. 1 - (a) Calculate the concentration of electrons and...Ch. 1 - A silicon sample is fabricated such that the hole...Ch. 1 - The electron concentration in silicon at T=300K is...Ch. 1 - (a) A silicon semiconductor material is to be...Ch. 1 - (a) The applied electric field in ptype silicon is...Ch. 1 - A drift current density of 120A/cm2 is established...Ch. 1 - An ntype silicon material has a resistivity of...Ch. 1 - (a) The applied conductivity of a silicon material...Ch. 1 - In GaAs, the mobilities are n=8500cm2/Vs and...Ch. 1 - The electron and hole concentrations in a sample...Ch. 1 - The hole concentration in silicon is given by...Ch. 1 - GaAs is doped to Na=1017cm3 . (a) Calculate no and...Ch. 1 - (a) Determine the builtin potential barrier Vbi in...Ch. 1 - Consider a silicon pn junction. The nregion is...Ch. 1 - The donor concentration in the nregion of a...Ch. 1 - Consider a uniformly doped GaAs pn junction with...Ch. 1 - The zerobiased junction capacitance of a silicon...Ch. 1 - The zerobias capacitance of a silicon pn junction...Ch. 1 - The doping concentrations in a silicon pn junction...Ch. 1 - (a) At what reversebias voltage does the...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - A silicon pn junction diode has an emission...Ch. 1 - Plot log10ID versus VD over the range 0.1VD0.7V...Ch. 1 - (a) Consider a silicon pn junction diode operating...Ch. 1 - A pn junction diode has IS=2nA . (a) Determine the...Ch. 1 - The reversebias saturation current for a set of...Ch. 1 - A germanium pn junction has a diode current of...Ch. 1 - (a)The reversesaturation current of a gallium...Ch. 1 - The reversesaturation current of a silicon pn...Ch. 1 - A silicon pn junction diode has an applied...Ch. 1 - A pn junction diode is in series with a 1M...Ch. 1 - Consider the diode circuit shown in Figure P1.39....Ch. 1 - The diode in the circuit shown in Figure P1.40 has...Ch. 1 - Prob. 1.41PCh. 1 - (a) The reversesaturation current of each diode in...Ch. 1 - (a) Consider the circuit shown in Figure P1.40....Ch. 1 - Consider the circuit shown in Figure P1.44....Ch. 1 - The cutin voltage of the diode shown in the...Ch. 1 - Find I and VO in each circuit shown in Figure...Ch. 1 - Repeat Problem 1.47 if the reversesaturation...Ch. 1 - (a) In the circuit Shown in Figure P1.49, find the...Ch. 1 - Assume each diode in the circuit shown in Figure...Ch. 1 - (a) Consider a pn junction diode biased at IDQ=1mA...Ch. 1 - Determine the smallsignal diffusion resistancefor...Ch. 1 - The diode in the circuit shown in Figure P1.53 is...Ch. 1 - The forwardbias currents in a pn junction diode...Ch. 1 - A pn junction diode and a Schottky diode have...Ch. 1 - The reversesaturation currents of a Schottky diode...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - (a) The Zener diode in Figure P1.57 is ideal with...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - The Output current of a pn junction diode used as...Ch. 1 - Using the currentvoltage characteristics of the...Ch. 1 - (a) Using the currentvoltage characteristics of...Ch. 1 - Use a computer simulation to generate the ideal...Ch. 1 - Use a computer simulation to find the diode...Ch. 1 - Design a diode circuit to produce the load line...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...
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- P 4.4-21 Determine the values of the node voltages V1, V2, and v3 for the circuit shown in Figure P 4.4-21. 29 ww 12 V +51 Aia ww 22. +21 ΖΩ www ΖΩ w +371 ①1 1 Aarrow_forward1. What is the theoretical attenuation of the output voltage at the resonant frequency? Answer to within 1%, or enter 0, or infinity (as “inf”) Attenuation =arrow_forwardWhat is the settling time for your output signal (BRF_OUT)? For this question, We define the settling time as the period of time it has taken for the output to settle into a steady state - ie when your oscillation first decays (aka reduces) to less than approximately 1/20 (5%) of the initial value. (a) Settling time = 22 μs Your last answer was interpreted as follows: Incorrect answer. Check 22 222 What is the peak to peak output voltage (BRF_OUT pp) at the steady state condition? You may need to use the zoom function to perform this calculation. Select a time point that is two times the settling time you answered in the question above. Answer to within 10% accuracy. (a) BRF_OUT pp= mVpp As you may have noticed, the output voltage amplitude is a tiny fraction of the input voltage, i.e. it has been significantly attenuated. Calculate the attenuation (decibels = dB) in the output signal as compared to the input based on the formula given below. Answer to within 1% accuracy.…arrow_forward
- my previous answers for a,b,d were wrong a = 1050 b = 950 d=9.99 c was the only correct value i got previously c = 100hz is correctarrow_forwardV₁(t) ww ZRI ZLI ZL2 ZTH Zci VTH Zc21 Figure 8. Circuit diagram showing calculation approach for VTH and Z TH we want to create a blackbox for the red region, we want to use the same input signal conditions as previously the design of your interference ector circuit: Sine wave with a 1 Vpp, with a frequency of 100 kHz (interference) Square wave with 2.4Vpp, with a frequency of 10 kHz (signal) member an AC Thevenin equivalent is only valid at one frequency. We have chosen to calculate the Thevenin equivalent circuit (and therefore the ackbox) at the interference frequency (i.e. 100 kHz), and the signal frequency (i.e. 10 kHz) as these are the key frequencies to analyse. Your boss is assured you that the waveform converter module has been pre-optimised to the DAB Receiver if you use the recommended circuit topology.arrow_forwardVs(t) + v(t) + vi(t) ZR ZL Figure 1: Second order RLC circuit Zc + ve(t) You are requested to design the circuit shown in Figure 1. The circuit is assumed to be operating at its resonant frequency when it is fed by a sinusoidal voltage source Vs (t) = 2sin(le6t). To help design your circuit you have been given the value of inductive reactance ZL = j1000. Assume that the amplitude of the current at resonance is Is (t) = 2 mA. Based on this information, answer the following to help design your circuit. Use cartesian notation for your answers, where required.arrow_forward
- What is the attenuation at the resonant frequency? You should use the LTSpice cursors for your measurement. Answer to within 1% accuracy, or enter 0, or infinity (as "inf") (a) Attenuation (dB) = dB Check You may have noticed that it was significantly easier to use frequency-domain "AC" simulation to measure the attenuation, compared to the steps we performed in the last few questions. (i.e. via a time-domain "transient" simulation). AC analysis allows us to observe and quantify large scale positive or negative changes in a signal of interest across a wide range of different frequencies. From the response you will notice that only frequencies that are relatively close to 100 kHz have been attenuated. This is the result of the Band-reject filter you have designed, and shows the 'rejection' (aka attenuation) of any frequencies that lie in a given band. The obvious follow-up question is how do we define this band? We use a quantity known as the bandwidth. A commonly used measurement for…arrow_forwardV₁(t) ww ZRI ZLI ZL2 ZTH Zci VTH Zc21 Figure 8. Circuit diagram showing calculation approach for VTH and Z TH we want to create a blackbox for the red region, we want to use the same input signal conditions as previously the design of your interference ector circuit: Sine wave with a 1 Vpp, with a frequency of 100 kHz (interference) Square wave with 2.4Vpp, with a frequency of 10 kHz (signal) member an AC Thevenin equivalent is only valid at one frequency. We have chosen to calculate the Thevenin equivalent circuit (and therefore the ackbox) at the interference frequency (i.e. 100 kHz), and the signal frequency (i.e. 10 kHz) as these are the key frequencies to analyse. Your boss is assured you that the waveform converter module has been pre-optimised to the DAB Receiver if you use the recommended circuit topology.arrow_forwardVs(t) + v(t) + vi(t) ZR ZL Figure 1: Second order RLC circuit Zc + ve(t) You are requested to design the circuit shown in Figure 1. The circuit is assumed to be operating at its resonant frequency when it is fed by a sinusoidal voltage source Vs (t) = 2sin(le6t). To help design your circuit you have been given the value of inductive reactance ZL = j1000. Assume that the amplitude of the current at resonance is Is (t) = 2 mA. Based on this information, answer the following to help design your circuit. Use cartesian notation for your answers, where required.arrow_forward
- For a band-rejection filter, the response drops below this half power point at two locations as visualised in Figure 7, we need to find these frequencies. Let's call the lower frequency-3dB point as fr and the higher frequency -3dB point fH. We can then find out the bandwidth as f=fHfL, as illustrated in Figure 7. 0dB Af -3 dB Figure 7. Band reject filter response diagram Considering your AC simulation frequency response and referring to Figure 7, measure the following from your AC simulation. 1% accuracy: (a) Upper-3db Frequency (fH) = Hz (b) Lower-3db Frequency (fL) = Hz (c) Bandwidth (Aƒ) = Hz (d) Quality Factor (Q) =arrow_forwardV₁(t) ww ZRI ZLI Z12 Zci Zcz Figure 4. Notch filter circuit topology ши Consider the second order resonant circuit shown in Figure 4. Impedances ZLIZ C1. ZL2. Z c2 combine together forming a two-stage "band- reject" filter, so called because it rejects a "band" (aka range) of frequencies. This circuit topology is also commonly referred to as a "band-stop" filter or "notch" filter. The output of the DAB receiver block has been approximated via Thevenin's theorem for you as a voltage source Vs (t) and associated series impedance Z RI To succeed in our goal, we are going to use an iterative design approach. First we will design the interference rejector, and then repeat the process, using the output of the interference rejector to check the provided waveform converter works as intended.arrow_forward1. What is the settling time for your output signal (BRF_OUT)? For this question, We define the settling time as the period of time it has taken for the output to settle into a steady state - ie when your oscillation first decays (aka reduces) to less than approximately 1/20 (5%) of the initial value. (a) Settling timearrow_forward
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