Microelectronics: Circuit Analysis and Design

4th Edition

ISBN: 9780073380643

Author: Donald A. Neamen

Publisher: McGraw-Hill Companies, The

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Textbook Question

Chapter 1, Problem D1.70DP

Design a circuit to produce the characteristics shown in Figure P 1.70, where υ O is the output voltage andis the input voltage. Assume diode piecewise linear parameters of V γ = 0.7 V and r f = 0

Chapter 1, Problem D1.70DP, Design a circuit to produce the characteristics shown in Figure P 1.70, where O is the output
Figure P1.70
υ I

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Chapter 1, Problem D1.69DP

Chapter 2, Problem 2.1EP

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Chapter 1 Solutions

Microelectronics: Circuit Analysis and Design

Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Calculate the majority and minority carrier...Ch. 1 - Consider ntype GaAs at T=300K doped to a...Ch. 1 - Consider silicon at T=300K . Assume the hole...Ch. 1 - Determine the intrinsic carrier concentration in...Ch. 1 - (a) Consider silicon at T=300K . Assume that...Ch. 1 - Using the results of TYU1.2, determine the drift...Ch. 1 - The electron and hole diffusion coefficients in...Ch. 1 - A sample of silicon at T=300K is doped to...Ch. 1 - (a) Calculate Vbi for a GaAs pn junction at T=300K...

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Design a circuit to produce the characteristics shown in Figure P 1.70, where υ O is the output voltage andis the input voltage. Assume diode piecewise linear parameters of V γ = 0.7 V and r f = 0 Figure P1.70 υ I

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Chapter 1 Solutions