Microelectronics: Circuit Analysis and Design

4th Edition

ISBN: 9780073380643

Author: Donald A. Neamen

Publisher: McGraw-Hill Companies, The

See similar textbooks

Concept explainers

Analysis of Diode

It is a semiconductor device in electronics applications where only a one-way current is required. It is like a one-way switch that allows current to flow in one direction only. A diode has two terminals, a cathode, and an anode. The cathode is the negat…

Working and Construction

In civil engineering, construction means the application of principles of science and mathematics for building bridges, dams, buildings, roads, highways, tunnels, airports, structures, etc. Different branches of science, like physics and chemistry, are e…

Property of Diode

An electronic component that facilitates the directional flow of current is known as a diode. According to the direction of the flow of current, the resistance of a diode changes from zero to Infinity.

Videos

Textbook Question

Chapter 1, Problem D1.69DP

Design a circuit to produce the characteristics shown in Figure P1.69, where υ O is the output voltage and υ I is the input voltage. Assume diode piecewise linear parameters of V γ = 0.7 V and r f = 0 .

Chapter 1, Problem D1.69DP, Design a circuit to produce the characteristics shown in Figure P1.69, where O is the output voltage
Figure P1.69

Expert Solution & Answer

Want to see the full answer?

Check out a sample textbook solution

See solution

Chapter 1, Problem D1.68DP

Chapter 1, Problem D1.70DP

Students have asked these similar questions

Q2. For the transformer shown in Fig. 1. A. Plot the winding connection for the transformer and justify your answer. (4M) B. If the transformer is adopted in 12 pulse diode rectifier, where two-series connected bridge rectifiers are used to supply a highly inductive load with 100 A. (i) Select a suitable turns ratio for the transformer (ii) Plot the line current of each winding ( secondary + primary) showing the current magnitude at each interval (iii) Use Fourier Page 1 of 3 analysis to obtain the Fourier series of all line currents then calculate the THD of the input current. (8=0° (16M) (Y) = 30° Fig. 1 P. I v I

Q2. For the transformer shown in Fig.1, A. Find the phase shift between the primary and star-connected secondary. B. If the transformer is adopted in a 12-pulse diode rectifier, where a two-series connected bridge rectifier is connected in series and supplies a highly inductive load (i) Select a suitable turns ratio for the transformer (ii) Plot the line current of each winding (secondary + primary). (iii)Using Fourier analysis to obtain the Fourier series of all line currents, then calculate the THD of the input current. (iv) Draw the output voltage of the first and second rectifiers and give the relation of the total output voltage. N2 B C Fig. 1 N3 a

Q2.A. It is planned to use the transformer shown in Fig. 1, a 12-pulse rectifier. Each secondary is connected to three phase controlled bridge rectifier. The two rectifiers are connected in series to supply a highly inductive load. 1. Based on the phasor relationship between different windings. If suitable turns ratio is selected, is it possible to use this transformer to produce 12 pulse output voltage? Show the reason behind your answer. 2. Assuming this arrangement is possible to be used in 12-pulse rectifier, draw the output voltage of the 1st and 2nd rectifier and give the relation of the total output voltage. 3. Use the Fourier analysis to show the harmonics in all line currents of the transformer. A B in C Fig. 1 b la a 2 b.

Chapter 1 Solutions

Microelectronics: Circuit Analysis and Design

Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Calculate the majority and minority carrier...Ch. 1 - Consider ntype GaAs at T=300K doped to a...Ch. 1 - Consider silicon at T=300K . Assume the hole...Ch. 1 - Determine the intrinsic carrier concentration in...Ch. 1 - (a) Consider silicon at T=300K . Assume that...Ch. 1 - Using the results of TYU1.2, determine the drift...Ch. 1 - The electron and hole diffusion coefficients in...Ch. 1 - A sample of silicon at T=300K is doped to...Ch. 1 - (a) Calculate Vbi for a GaAs pn junction at T=300K...

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Design a circuit to produce the characteristics shown in Figure P1.69, where υ O is the output voltage and υ I is the input voltage. Assume diode piecewise linear parameters of V γ = 0.7 V and r f = 0 . Figure P1.69

Concept explainers

Videos

Want to see the full answer?

Chapter 1 Solutions