Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Textbook Question
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Chapter 1, Problem 1.35P

(a)The reverse−saturation current of a gallium arsenide pn junction diode is I S = 10 22 A . Determine the diode current for diode voltages of 0.8, 1.0, 1.2, −0.02, −0.2, and −2 V. (b) Repeat part (a) for I S = 5 × 10 24 A .

(a)

Expert Solution
Check Mark
To determine

Diode current for the given saturation current and diode voltages.

Answer to Problem 1.35P

For VD=0.8V , ID1=2.3063nA

For VD=1.0V , ID2=5.054μA

For VD=1.2V , ID3=11.0754mA

For VD=0.02V , ID4=5.3663×1023A

For VD=0.2V , ID5=9.995×1023A

For VD=0.02V , ID6=1×1022A

Explanation of Solution

Given:

Thermal voltage is VT=0.026V .

Reverse-saturation current is IS=1022A .

Different values of diode voltagesare

  VD=0.8V .

  VD=1.0V .

  VD=1.2V .

  VD=0.02V .

  VD=0.2V .

  VD=2V .

Concept Used:

For forward diode voltage, the diode current is

  ID=ISexp(VDVT)

For reverse diode voltage, the diode current is

  ID=IS[exp( V D V T)1]

Calculation:

For VD=0.8V ,

  ID1=ISexp( V D V T )=( 10 22)exp{0.80.026}=2.3063nA

For VD=1V ,

  ID2=ISexp( V D V T )=( 10 22)exp{10.026}=5.054μA

For VD=1.2V ,

  ID3=ISexp( V D V T )=( 10 22)exp{1.20.026}=11.0754mA

For reverse voltage, VD=0.02V .

  ID4=IS[exp( V D V T )1]=( 10 22)[exp( 0.02 0.026)1]=5.3663×1023A

For reverse voltage, VD=0.2V .

  ID5=IS[exp( V D V T )1]=( 10 22)[exp( 0.2 0.026)1]=9.995×1023A

For reverse voltage, VD=2V .

  ID6=IS[exp( V D V T )1]=( 10 22)[exp( 2 0.026)1]=1×1022A

(b)

Expert Solution
Check Mark
To determine

Diode current for the given saturation current and diode voltages.

Answer to Problem 1.35P

For VD=0.8V , ID1=115.313pA

For VD=1.0V , ID2=0.2527μA

For VD=1.2V , ID3=0.55377mA

For VD=0.02V , ID4=2.6832×1024A

For VD=0.2V , ID5=4.997×1024A

For VD=2V , ID6=5×1024A

Explanation of Solution

Given:

Thermal voltage is VT=0.026V .

Reverse-saturation current is IS=5×1024A .

Different values of diode voltagesare

  VD=0.8V .

  VD=1.0V .

  VD=1.2V .

  VD=0.02V .

  VD=0.2V .

  VD=2V .

Concept Used:

For forward diode voltage, the diode current is

  ID=ISexp(VDVT)

For reverse diode voltage, the diode current is

  ID=IS[exp( V D V T)1]

Calculation:

For VD=0.8V ,

  ID1=ISexp( V D V T )=(5× 10 24)exp{0.80.026}=115.313pA

For VD=1V

  ID2=ISexp( V D V T )=(5× 10 24)exp{10.026}=0.2527μA

For VD=1.2V

  ID3=ISexp( V D V T )=(5× 10 24)exp{1.20.026}=0.55377mA

For reverse voltage, VD=0.02V

  ID4=IS[exp( V D V T )1]=(5× 10 24)[exp( 0.02 0.026)1]=2.6832×1024A

For reverse voltage, VD=0.2V

  ID5=IS[exp( V D V T )1]=(5× 10 24)[exp( 0.2 0.026)1]=4.997×1024A

For reverse voltage, VD=2V

  ID6=IS[exp( V D V T )1]=(5× 10 24)[exp( 2 0.026)1]=5×1024A

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Chapter 1 Solutions

Microelectronics: Circuit Analysis and Design

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Let R=4k and...Ch. 1 - The power supply (input) voltage in the circuit of...Ch. 1 - (a) The circuit and diode parameters for the...Ch. 1 - Determine the diffusion conductance of a pn...Ch. 1 - Determine the smallsignal diffusion resistance of...Ch. 1 - The diffusion resistance of a pn junction diode at...Ch. 1 - A pn junction diode and a Schottky diode both have...Ch. 1 - Consider the circuit shown in Figure 1.45....Ch. 1 - Consider the circuit shown in Figure 1.46. The...Ch. 1 - A Zener diode has an equivalent series resistance...Ch. 1 - The resistor in the circuit shown in Figure 1.45...Ch. 1 - Describe an intrinsic semiconductor material. What...Ch. 1 - Describe the concept of an electron and a hole as...Ch. 1 - Describe an extrinsic semiconductor material. What...Ch. 1 - Describe the concepts of drift current and...Ch. 1 - How is a pn junction formed? 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