The np product and the intrinsic carrier concentration n = Ne -(Ec-Eƒ)/kT p = N,e -(Eƒ-E,)/kT np = N Ne¯ -(E-E,)/kT = N₂N₁e -Eg/kT 2 - np = n; ni = [N¸N‚e¯ -Eg/2kT In an intrinsic (undoped) semiconductor, n = p = n; n, is the intrinsic carrier concentration ≈2 n; 1010 cm³ for Si at room temperature Intrinsic electron and hole concentration versus temperature in common semiconductors 1016 n = Ne˜¯ -(E-Ef)/kT 1015 Ge p = N₁e (E-E₁)/kT Intrinsic carrier concentration (cm³) 1014 1013 1012 GaAs 1011 1010 109 108 107 106 105 200 300 400 500 600 700 T(K) Intrinsic charge carrier concentration 1. Calculate intrinsic carrier concentration for Si, Ge and GaAs at temperatures -20°C, 20°C (room temperature) and 120°C. 2. Compare the obtained data with n and p shown on previous slide 25.

The np product and the intrinsic carrier concentration n = Ne -(Ec-Eƒ)/kT p = N,e -(Eƒ-E,)/kT np = N Ne¯ -(E-E,)/kT = N₂N₁e -Eg/kT 2 - np = n; ni = [N¸N‚e¯ -Eg/2kT In an intrinsic (undoped) semiconductor, n = p = n; n, is the intrinsic carrier concentration ≈2 n; 1010 cm³ for Si at room temperature Intrinsic electron and hole concentration versus temperature in common semiconductors 1016 n = Ne˜¯ -(E-Ef)/kT 1015 Ge p = N₁e (E-E₁)/kT Intrinsic carrier concentration (cm³) 1014 1013 1012 GaAs 1011 1010 109 108 107 106 105 200 300 400 500 600 700 T(K) Intrinsic charge carrier concentration 1. Calculate intrinsic carrier concentration for Si, Ge and GaAs at temperatures -20°C, 20°C (room temperature) and 120°C. 2. Compare the obtained data with n and p shown on previous slide 25.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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