Q7 For the circuit shown in Fig. 2.20, the transistors are identical and have the followingparameters: hfe = 50, hie = 1.1K, hre = 0, and hoe = 0. Calculate Auf, Rif and Rof.Ans: 45.4; 112 KQ; 129.25 V10k47k4.7kVo150kwVs47k4.7kW225μF33k50uF50μF4.7k4.7kR₁RofRifR1000Fig. 2.20 Circuit for Q7.

Answered: Q7 For the circuit shown in Fig. 2.20,…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Discussion 1. Calculate the theoretical DC voltages and currents for the transistor bias circuit and compare them with the practically measured values. Table-1: Measured Quantities for the DC Bias Circuit Parameter B VB VE Vc Icọ VCEQ VBEQ Te Value 65.63 1.20 0.58 7.32 1418mA 6.74 0,62 18.3356 ECTR Vcc +12V R5 R3 3.3kQ всз37 R2 R4 4.7kQ 4700 Figure 5: The DC Bias Circuit of the Common Emitter Amplifier
A certain npn silicon transistor has vBE=0.7 V for iB=0.1 mA at a temperature of 30°C. Sketch the input characteristic to scale at 30°C. What is the approximate value of vBE for iB = 0.1 mA at 180°C? (Use the rule of thumb that vBE is reduced in magnitude by 2 mV per degree increase in temperature.) Sketch the input characteristic to scale at 180°C.
In CB configuration, the value of a=0.98A. A voltage drop of 4.9V is obtained across the resistor of 5KQ when connected in collector circuit. Find the base current. a) 0.01mA b) 0.07MA c) 0.02mA d) 0.05mA
THE PAIR of transistors Q1 and Q2 in the figure have gains β1 = 200 and β2 = 75 respectively. Determine the value of the equivalent gain βeq for the equivalent transistor Qeq. ( NEED ONLY HANDWRITTEN SOLUTION PLEASE OTHERWISE DOWNVOTE).
1. A unijunction transistor has 10 V between the bases. If the intrinsic stand off ratio is 0.65, find the value of stand of voltage.What will be the peak-point voltage if the forward voltage drop in the pn junction is 0.7 V ? GIVEN! Vp RsI RB2 Ne
A Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.
RB= 430 kilo ohm
Part of the data sheet of the 2N5457 model JFET transistor is provided in your question paper. Answer the following using this data sheet i. Find the Ip (drain current) value for VGs = 0 V. (VGs (off) = - 3.5V) ii. Find the Ip (drain current) value for VGs = -2 V. (VGs (ofM= - 3.5V) iii. Calculate the values of Vps and VGs in the circuit given in the figure. Use the minimum values given in the data sheet. VDD +12 V Rp 10 kf 2N5457 Rs 5.6 kf
1. Assume Q₁ and Q₂ in the following figure have matching characteristics and loss is 1.5 mA. a. What is lo? b. What is the approximate gain? c. If Q₂ is replaced with a transistor with an loss of 1.0 mA, what problem will occur? HI +VDD O 2₁ 22 Ò -Vss -OV ord U |||||
If two identical transistors each having a current gain of 80 are connected in Darlington connection, the current gain of the connection will be red 6400 O b. 100 on Oc. 1 O d. 0 O e. 80 Of. 40 Og. 160 O h. 640
Time left 1:46:17 A bipolar junction transistor is described in the figure below. The transistor is implemented in the circuit with Vcc, Rc, and RB equal to 16 volts, 2k, and 10kn. Determine the value of Vout if Vin = 1.1V. V... in RB B Vec Ro V E out

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