a) Draw the energy band diagram for the device. Include Ec, Ev, E; and a carefully positioned EF on your diagram. Also indicate how you arrived at your answer. b) What is the electrostatic potential drop across the device; i.e., what is V(x=x)-V(x=0)? 2. A Si device is maintained under equilibrium conditions at T-300K. Given the electric field inside the device as is pictured next, N₁ = 10%/cm³ for 0
a) Draw the energy band diagram for the device. Include Ec, Ev, E; and a carefully positioned EF on your diagram. Also indicate how you arrived at your answer. b) What is the electrostatic potential drop across the device; i.e., what is V(x=x)-V(x=0)? 2. A Si device is maintained under equilibrium conditions at T-300K. Given the electric field inside the device as is pictured next, N₁ = 10%/cm³ for 0
Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)
10th Edition
ISBN:9781337399128
Author:Russell E. Smith
Publisher:Russell E. Smith
Chapter2: Basic Electricity
Section: Chapter Questions
Problem 20RQ: What is a proton? Where does it normally exist in an atom, and what is its charge?
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Transcribed Image Text:a) Draw the energy band diagram for the device. Include Ec, Ev, E; and a carefully positioned EF on your
diagram. Also indicate how you arrived at your answer.
b) What is the electrostatic potential drop across the device; i.e., what is V(x=x)-V(x=0)?

Transcribed Image Text:2. A Si device is maintained under equilibrium conditions at T-300K. Given the electric field inside the device
as is pictured next, N₁ = 10%/cm³ for 0<x<x, and N-10%/cm³ for x, <x<xe,
ε
Xa
Xb
Xc
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