See BOTH images to answer correctly thx Determine the position of Ei, computer EF-Ei, and draw a carefully dimensioned energy banddiagram for the Si sample. (Note: n; =1010/cm³ at 300K, EG(Si)=1.08eV at 450 K and 1.015 eVat 650 K, k=8.617X10-5 eV/K, mp*/mn* = 0.69 at 300K, 450K, and 650K)a. Tb. TC.Td. T300 K, NA << ND, ND = 1015/cm³300 K, NA = 9X1015/cm3, ND = 10¹6/cm³450 K, NA = 0, ND = 1014/cm³650 K, NA = 0, ND = 1014/cm³ Intrinsic carrier concentration (cm³)101010'101410131012101110101010⁹10810'106S10°200300400 500 600700T(K)

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Answered: Determine the position of Ei, computer…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Consider an n-type silicon for which the dopant concentration Np= 1016/cm. Find the electron and hole concentrations at T=350 K. electron = 1016/cm³ & holes= 17.22 × 106 cm3 electron = 2.25 × 104/cm3 & holes= 2.25 x 104/cm3 electron = 17.22 × 100 /cm³ & holes= 1016/cm3 electron = 106/cm3 & holes= 1016 cm3
A Si pn-junction at 300 K has an n-side resistivity of 35 2 and a p-side doping level of N,= 1×106 cm at equilibrium the value of the contact potential barrier of the junction wvill be: Select one: OA. 0.5821 V B. 7.617 V CC. 0.07309 V D. 1.001 V E. 22.39 V
Consider an n-type silicon for which the dopant concentration ND =10^16/cm^3 find the electon and hole concentration at T= 350 K
Q5) a) Calculate the minimum and the maximum input voltages that can be made by the given diode. The data sheet gives: Izmin = 2mA,Izmax=30mA, and Vz = 5 V. b) In which region of I-V characteristic does the diode operate ? Why? c) What is the main function for the given circuit? V1 =OV R1 10052 2 D1 1N5247B
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Consider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3
Compared to Gallium Arsenide (GaAs), Silicon: 1. Higher signal rate as electron mobility is higher 2. Lower crystal quality due to difficult stoichiometric growth 3. Arsenic vapor pressure is higher so crystals are easier to grow 4. Higher optoelectronic conversion efficiency Which of these statements would be correct? Please choose one: a. 1, 2 and 3 are correct b. 1, 2, 3 and 4 are correct c. 3 and 4 are correct D. none of the above
In the circuit shown below. Let V-33 V and i,-28 mA and Voo -0.7 V: iD Vcos(at)V For t = 0s, the current in the diode equals: Ca. 0 mA Cb. 2 mA Cc. 4 mA Od. 2 mA Ift = T/4, then the current in the diode equals: Ca. 8.92 mA Ob. 5.71 mA Oc 7.14 mA Od. 4.57 ma Ift- T/2, then the current in the diode equals: Ca. 10.39 mA Cb. 16.39 mA Oc 14.39 mA Od. 12.39 mA
A 1N4738A zener diode has a ZZ of 4.5 Ω. Taking the data from the datasheet we have VZ = 8.2 V with a test current, IZ, of 31 mA. What is the voltage across the zener terminals when the current is 15 mA? When the current is 55 mA? Make the representation of the values by means of their curve characteristic.
An abrupt pn junction, a diode, is fabricated using 1017 acceptor atoms cm-3 on the p side and 10^15 donors cm^-3 on the n side of the diode. The geometry of the pnjunction is shown in the figure below.Assume that when the diode is illuminated with light (with photon energy > bandgap energy) 10^21 EHPs are generated per cm^-3 per sec. Also Assume that the electron and hole recombination times are 10 microsec and that Dp =12 cm2/s and Dn = 18 cm2/s . If w =4mm, t = 4mm L1 = 2mm and L2 = 2mm, calculate the resistance of the p side and the n side of the pn junction due to (δn and δp), assume that they act as two resistors in series and determine the current through the pn junction if the reverse bias voltage is 2V. T = 300K.
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The diode in the circuit shown has a reverse saturation current of 1.5 x 10-¹4 A and an ideality factor of 1.1. Assume the circuit is operating at 27°C. a. Determine VOUT. b. What is the small signal model of the diode under these conditions? You may neglect the parasitic capacitance across the diode junction and the resistance of the semiconductor material outside the diode junction. C. 2 V ww 1ΚΩ ▷ -1₁ VOUT Use this small signal model to approximate the peak-to-peak value of the AC component of VOUT if a 1 mV RMS sinusoidal signal is added to the 2 V DC source.

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