e) In a nondegenerate germanium sample maintained under equilibrium conditions near room temperature, it is known that n=10¹³/cm³, n = 2p, and NA 0. Determine n and ND.
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A: Final Answers:∣H(−5.64)∣≈2336.96,∠H(−5.64)≈11.28 radians∣H(4.28)∣≈491.69,∠H(4.28)≈−8.56…
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- What is CEMF?Can you show the step please???Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?
- Determine the voltage across the diode in the figure below, using the complete diode model with: r'd = 10-? and r'R = 100-M?a. The value of the forward current. (in Amperes)b. The value of the forward voltage. c. The value of the voltage across the diode.Can you explain and show all the details ???Please respond to question in attached image. Please.
- Consider a p-n junction at room temperature. Doping concentration in the n and p regions is Np = 1-1017 cm 3 and NA = 4-1017 cm 3, respectively. Calculate the position of the Fermi energy level in the p-type semiconductor relative to the valence band edge. Give your answer in eV. If needed, use the following values for material parameters: Nc = 2.8 - 1019 cm 3 Ny = 10 1019 cm-3 %3D n; = 1.5 1010 cm-3 %3D kT = 26 meV EG = 1.1 ev Your Answer: Answer unitsSuppose a drift current density of 5000 A/cm2 exists in the neutral region on the n-type side of a diode that has a resistivity of 0.5 Ω· cm. What is the electric field needed to support this drift current density?Q4/Consider silicon at T=300 K. Calculate the thermal-equilibrium elcctron and hole concentrations for impurity concentrations of (a) Na= 4X 10 cm3 , Nd= 8 X105 cm3 and (b) Na =Nd= 3 X 105 cm3.
- A simple p*n junction is designed to work as IMPATT diode. The doping concentrations in the p* layer is 1019 cm-3 while the doping in the n-layer is 0.7 x1016 Calculate the peak electric field if the breakdown voltage is 80 V and the dielectric constant is 11.9. Express your answer in the unit of kV/cm. cm-3Suppose a drift current density of 2000 A/cm2 exists in the neutral region on the p-type side of a diode that has a resistivity of 2.5 μ·cm. What is the electric field needed to support this drift current density?In the circuit given in the figure, since Vi is a square wave with a frequency of 1 kHz and an amplitude varying between +5V and -5V; Vi and Vo voltages one after the other and in scale; a) Draw with Zener diode is not active ? b) Draw with the Zener diode on? (Assume the diodes in the circuit are ideal)