Boltzmann approximation of Fermi function f(E)e-(E-E)/KT EN Maxwell- T E, +3kT Boltzmann Ef. + 2kT E₁ + kT Ef E₁ - kT E₁ - 2kT E - 3kT Fermi- Dirac f(E) 1-e-(Ef-E)/kT ·ƒ(E) 0.5 1 1 f(E)= 1+e' (E-Eƒ)/kT E-E,>> KT f ƒ (E) ≈ e² (E-E₁ ) / kT E-E, <<-kT ƒ (E) = 1 − e−(E₁-E)/kT Non-degenerate semiconductors Non-degenerate semiconductors are defined as semiconductors for which the Fermi energy is at least 3KT away from either band edge. 3kT E EF here... Degenerate semiconductor EF here... Nondegenerate semiconductor Ev EF here... Degenerate semiconductor 3kT The approximation of non-degenerate semiconductors allows the Fermi function to be replaced with the simple exponential Boltzmann function. In many cases, solid state electronic devices operate on the principles of non- degenerate semiconductors. Fermi function 1. Calculate probability for an electron to have an energy of 3kT above the Fermi level. 2. Calculate probability for a hole to have an energy of 3kT below the Fermi level. 3. Compare this data with that calculated using Boltzmann approximation.
Boltzmann approximation of Fermi function f(E)e-(E-E)/KT EN Maxwell- T E, +3kT Boltzmann Ef. + 2kT E₁ + kT Ef E₁ - kT E₁ - 2kT E - 3kT Fermi- Dirac f(E) 1-e-(Ef-E)/kT ·ƒ(E) 0.5 1 1 f(E)= 1+e' (E-Eƒ)/kT E-E,>> KT f ƒ (E) ≈ e² (E-E₁ ) / kT E-E, <<-kT ƒ (E) = 1 − e−(E₁-E)/kT Non-degenerate semiconductors Non-degenerate semiconductors are defined as semiconductors for which the Fermi energy is at least 3KT away from either band edge. 3kT E EF here... Degenerate semiconductor EF here... Nondegenerate semiconductor Ev EF here... Degenerate semiconductor 3kT The approximation of non-degenerate semiconductors allows the Fermi function to be replaced with the simple exponential Boltzmann function. In many cases, solid state electronic devices operate on the principles of non- degenerate semiconductors. Fermi function 1. Calculate probability for an electron to have an energy of 3kT above the Fermi level. 2. Calculate probability for a hole to have an energy of 3kT below the Fermi level. 3. Compare this data with that calculated using Boltzmann approximation.
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Question
Please answer 1, 2 and 3 on the end

Transcribed Image Text:Boltzmann approximation of Fermi function
f(E)e-(E-E)/KT
EN
Maxwell-
T
E, +3kT
Boltzmann
Ef. + 2kT
E₁ + kT
Ef
E₁ - kT
E₁ - 2kT
E - 3kT
Fermi-
Dirac
f(E) 1-e-(Ef-E)/kT
·ƒ(E)
0.5
1
1
f(E)=
1+e'
(E-Eƒ)/kT
E-E,>> KT
f
ƒ (E) ≈ e² (E-E₁ ) / kT
E-E, <<-kT
ƒ (E) = 1 − e−(E₁-E)/kT
Non-degenerate semiconductors
Non-degenerate semiconductors are defined as semiconductors for which the
Fermi energy is at least 3KT away from either band edge.
3kT
E
EF here... Degenerate
semiconductor
EF here... Nondegenerate
semiconductor
Ev
EF here... Degenerate
semiconductor
3kT
The approximation of non-degenerate semiconductors allows the Fermi function
to be replaced with the simple exponential Boltzmann function.
In many cases, solid state electronic devices operate on the principles of non-
degenerate semiconductors.
Fermi function
1. Calculate probability for an electron to have an energy of 3kT
above the Fermi level.
2. Calculate probability for a hole to have an energy of 3kT below
the Fermi level.
3. Compare this data with that calculated using Boltzmann
approximation.
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