Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 8, Problem 8.9EP

(a)

To determine

The value of IBias that induces quiescent collector current a ICQ of 1mA .

(a)

Expert Solution
Check Mark

Answer to Problem 8.9EP

The value of the bias current is 0.6×103A .

Explanation of Solution

Calculation:

The given diagram is shown in Figure 1

  Microelectronics: Circuit Analysis and Design, Chapter 8, Problem 8.9EP

The conversion from 1mA into A is given by,

  1mA=103A

The expression for the value of the base to emitter to voltage is given by,

  VBE=VTln(I CQI SQ)

Substitute 0.026V for VT , 2×1014A for ISQ and 1mA for ICQ in the above equation.

  VBE=(0.026V)ln( 1× 10 3 A 2× 10 14 A)=0.6405V

The expression for the bias current is given by,

  IBias=ISDeV BEVT

Substitute 0.026V for VT , 1.2×1014A for ISD and 0.6405V for VBE in the above equation.

  IBias=(1.2× 10 14A)e 0.6405V 0.026V=0.6×103A

Conclusion:

Therefore, the value of the bias current is 0.6×103A .

(b)

To determine

The value of iCn , iCp , vBEn and VEBP .

(b)

Expert Solution
Check Mark

Answer to Problem 8.9EP

The value of current iCn is 1.188mA , ID is 0.588mA , voltage vBEn is 0.645V , value of voltage is VEBp is 0.6349V and current iCp is 0.8083mA .

Explanation of Solution

Calculation:

The value of peak voltage and output voltage are equal and the expression for the value of the load current is given by,

  iL=vO( peak)RL

Substitute 1kΩ for RL and 1.2V for vO(peak) in the above equation.

  iL=1.2V1kΩ=1.2mA

The expression for the emitter current for3 the Qn transitory is equal to the load current and is given by,

  iEniL

Substitute 1.2mA for iL in the above equation.

  iEn1.2mA

The expression for the base current of the Qn is given by,

  iBn=iEn1+β

Substitute 1.2mA for iEn and 100 for β in the above equation.

  iBn=1.2mA1+100=0.0118mA

The expression for the collector current of Qn is given by,

  iCn=βiBn

Substitute 0.0118mA for iBn and 100 for β in the above equation.

  iCn=(100)(0.0118mA)=1.18mA

The conversion from A into mA is given by,

  1A=103mA

The conversion from 0.6×103A into mA is given by,

  0.6×103A=0.6mA

The conversion from 2×1014A into mA is given by,

  2×1014A=2×1011mA

The expression to determine the value of the diode current is given by,

  ID=IBiasiBn

Substitute 0.6mA for IBias and 0.0118mA for iBn in the above equation.

  ID=0.6mA0.0118mA=0.588mA

The value of the collector current for Qn is given by,

  iCn=ID

Substitute 0.588mA for

  ID in the above equation.

  iCn=0.588mA

The expression for the base emitter voltage of

  Qn is given by,

  vBEn=VTln(i CnI SQ)

Substitute

  2×1011mA for

  ISQ , 1.188mA for iCn and 0.026V for VT in the above equation.

  vBEn=0.026Vln( 1.188mA 2× 10 11 mA)=0.645V

The expression for the value of VBB is given by,

  VBB=2VTln(IDI SD)

Substitute 0.026V for VT , 1.2×1011mA for ISD and 0.588mA for ID in the above equation.

  VBB=2(26mV)ln( 0.588mA 1.2× 10 11 mA)=1.2799V

The expression for the base emitter voltage of Qp is given by,

  VEBp=VBBvBEn

Substitute 1.2799V for VBB and 0.645V for vBEn in the above equation.

  VEBp=1.2799V0.645V=0.6349V

The expression for the collector current Qp is given by,

  iCp=ISQev EBpVT

Substitute 2×1011mA for ISQ , 0.026V for VT and 0.6349V for vEBp in the above equation.

  iCp=(2× 10 11mA)e 0.6349V 0.026V=0.8083mA

Conclusion:

Therefore, the value of current iCn is 1.188mA , ID is 0.588mA , voltage vBEn is 0.645V , value of voltage is VEBp is 0.6349V and current iCp is 0.8083mA .

(c)

To determine

The value of iCn , iCp , vBEn and VEBP .

(c)

Expert Solution
Check Mark

Answer to Problem 8.9EP

The value of current iCn is 2.97mA , ID is 0.5703mA , voltage vBEn is 0.668V , value of voltage VEBp is 0.6104V and current iCp is 0.3139mA .

Explanation of Solution

Calculation:

The value of peak voltage and output voltage are equal and the expression for the value of the load current is given by,

  iL=vO( peak)RL

Substitute 1kΩ for RL and 3V for vO(peak) in the above equation.

  iL=3V1kΩ=3mA

The expression for the emitter current for3 the Qn transitory is equal to the load current and is given by,

  iEniL

Substitute 3mA for iL in the above equation.

  iEn3mA

The expression for the base current of the Qn is given by,

  iBn=iEn1+β

Substitute 1.2mA for iEn and 100 for β in the above equation.

  iBn=3mA1+100=0.0297mA

The expression for the collector current of Qn is given by,

  iCn=βiBn

Substitute 0.0297mA for iBn and 100 for β in the above equation.

  iCn=(100)(0.0297mA)=2.97mA

The conversion from A into mA is given by,

  1A=103mA

The conversion from 2×1014A into mA is given by,

  2×1014A=2×1011mA

The expression to determine the value of the diode current is given by,

  ID=IBiasiBn

Substitute 0.6mA for IBias and 2.97mA for iBn in the above equation.

  ID=0.6mA2.97mA=0.5703mA

The value of the collector current for Qn is given by,

  iCn=ID

Substitute 0.5703mA for ID in the above equation.

  iCn=0.5703mA

The expression for the base emitter voltage of Qn is given by,

  vBEn=VTln(i CnI SQ)

Substitute 2×1011mA for ISQ , 0.5703mA for iCn and 0.026V for VT in the above equation.

  vBEn=0.026Vln( 0.5703mA 2× 10 11 mA)=0.668V

The expression for the value of VBB is given by,

  VBB=2VTln(IDI SD)

Substitute 0.026V for VT , 1.2×1011mA for ISD and 0.5703mA for ID in the above equation.

  VBB=2(26mV)ln( 0.5703mA 1.2× 10 11 mA)=1.2784V

The expression for the base emitter voltage of Qp is given by,

  VEBp=VBBvBEn

Substitute 1.2784V for VBB and 0.668V for vBEn in the above equation.

  VEBp=1.2784V0.668V=0.6104V

The expression for the collector current Qp is given by,

  iCp=ISQev EBpVT

Substitute 2×1011mA for ISQ , 0.026V for VT and 0.6104V for vEBp in the above equation.

  iCp=(2× 10 11mA)e 0.6104V 0.026V=0.3139mA

Conclusion:

Therefore, the value of current iCn is 2.97mA , ID is 0.5703mA , voltage vBEn is 0.668V , value of voltage VEBp is 0.6104V and current iCp is 0.3139mA .

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Chapter 8 Solutions

Microelectronics: Circuit Analysis and Design

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