Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 8, Problem 8.7EP
(a)
To determine
The value of
(b)
To determine
The value of the small signal voltage gain for
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9. Design a biased-transistor circuit using VBB = Vcc= 10 V for a Q-point of Ic = 5 mA and
VCE 4 V. Assume pc = 100. The design involves finding RB, RC, and the minimum power
rating of the transistor. (The actual power rating should be greater.) Sketch the circuit.
Draw, Illustrate and label your schematic diagram before solving the problem.
3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and Voltage at common collector is +28V,Voltage at Base-emitter junction is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.
(ii) Calculate the RB, Rc, and the minimum power rating of the transistor (Note: the
actual power rating should be greater).
Chapter 8 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 8 - Prob. 8.1EPCh. 8 - Prob. 8.2EPCh. 8 - Prob. 8.3EPCh. 8 - Prob. 8.1TYUCh. 8 - Prob. 8.2TYUCh. 8 - Prob. 8.3TYUCh. 8 - Prob. 8.4EPCh. 8 - Prob. 8.5EPCh. 8 - Prob. 8.7EPCh. 8 - Prob. 8.4TYU
Ch. 8 - Prob. 8.5TYUCh. 8 - Prob. 8.6TYUCh. 8 - A transformercoupled emitterfollower amplifier is...Ch. 8 - Prob. 8.7TYUCh. 8 - Prob. 8.9EPCh. 8 - Prob. 8.11EPCh. 8 - Consider the classAB output stage shown in Figure...Ch. 8 - From Figure 8.36, show that the overall current...Ch. 8 - Prob. 1RQCh. 8 - Describe the safe operating area for a transistor.Ch. 8 - Why is an interdigitated structure typically used...Ch. 8 - Discuss the role of thermal resistance between...Ch. 8 - Define and describe the power derating curve for a...Ch. 8 - Define power conversion efficiency for an output...Ch. 8 - Prob. 7RQCh. 8 - Describe the operation of an ideal classB output...Ch. 8 - Discuss crossover distortion.Ch. 8 - What is meant by harmonic distortion?Ch. 8 - Describe the operation of a classAB output stage...Ch. 8 - Describe the operation of a transformercoupled...Ch. 8 - Prob. 13RQCh. 8 - Sketch a classAB complementary MOSFET pushpull...Ch. 8 - What are the advantages of a Darlington pair...Ch. 8 - Sketch a twotransistor configuration using npn and...Ch. 8 - Prob. 8.1PCh. 8 - Prob. 8.2PCh. 8 - Prob. 8.3PCh. 8 - Prob. 8.4PCh. 8 - Prob. 8.5PCh. 8 - Prob. D8.6PCh. 8 - A particular transistor is rated for a maximum...Ch. 8 - Prob. 8.8PCh. 8 - For a power MOSFET, devcase=1.5C/W , snkamb=2.8C/W...Ch. 8 - Prob. 8.10PCh. 8 - The quiescent collector current in a BiT is ICQ=3A...Ch. 8 - Prob. 8.12PCh. 8 - Prob. 8.13PCh. 8 - Prob. 8.14PCh. 8 - Prob. 8.15PCh. 8 - Prob. 8.16PCh. 8 - Consider the classA sourcefollower circuit shown...Ch. 8 - Prob. 8.18PCh. 8 - Prob. 8.19PCh. 8 - Prob. 8.20PCh. 8 - Prob. 8.21PCh. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Prob. 8.24PCh. 8 - For the classB output stage shown in Figure P8.24,...Ch. 8 - Prob. 8.26PCh. 8 - Prob. 8.27PCh. 8 - Consider the classAB output stage in Figure P8.28....Ch. 8 - Prob. 8.29PCh. 8 - Prob. D8.30PCh. 8 - Prob. 8.31PCh. 8 - Prob. D8.32PCh. 8 - Consider the transformercoupled commonemitter...Ch. 8 - The parameters for the transformercoupled...Ch. 8 - A BJT emitter follower is coupled to a load with...Ch. 8 - Consider the transformercoupled emitter follower...Ch. 8 - A classA transformer-coupled emitter follower must...Ch. 8 - Repeat Problem 8.36 if the primary side of the...Ch. 8 - Consider the circuit in Figure 8.31. The circuit...Ch. 8 - Prob. D8.40PCh. 8 - The value of IBiass in the circuit shown in Figure...Ch. 8 - The transistors in the output stage in Figure 8.34...Ch. 8 - Consider the circuit in Figure 8.34. The supply...Ch. 8 - Prob. 8.44PCh. 8 - Prob. 8.45PCh. 8 - Consider the classAB MOSFET output stage shown in...Ch. 8 - Prob. 8.47PCh. 8 - Consider the classAB output stage in Figure P8.48....Ch. 8 - For the classAB output stage in Figure 8.36, the...
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- Open with v Consider class-A emitter follower circuit shown in the figure below. The circuit parameters are V+ = 24 V, V- = -24 V, and RL = 2000. The transistor parameters are B = 50, VBElon) = 0.7 V, and VCElsat) = 0.2 V. The output voltage is to vary between +20 V and -20 V. The minimum current in Q1 is to be ie1 = 20 mA. For vo = 0, find the power dissipated in the first transistor Q1- V+arrow_forward04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic diagram of your design. (10 points)arrow_forwardDetermine in which mode (depletion, enhancement or neither) each D-MOSFET in the figure below.arrow_forward
- (a) What is the output current IO in the circuitshown if −VEE = −10 V andR = 20 ohm? Assume that the MOSFET is saturated.(b) What is the minimum voltage VDDneeded to saturate the MOSFET if VTN = 2.5 Vand K'n = 0.25 A/V2. (c) What must be the powerdissipation ratings of resistor R and the FET.arrow_forwardThe n-channel JFET and the D-MOSFET have very similar I-V output characteristics. Which of these two structures can be operated in enhancement mode and why is that possible.arrow_forwardcircuit diagram with a load ,for the Power MOSFETarrow_forward
- Draw the circuit diagram of a resistance–capacitance coupled source followerarrow_forwardPlease all subpart is compulsory for like this please Asaparrow_forward5- a-) Define the MOSFET in the figure, explain by drawing its input and output circuit characteristics.b-) Since k=0.1 mA/V2, VGS=5V and VT=2.5V for this MOSFET, find the VDS voltage using the circuit.arrow_forward
- Transistors originally were made with germanium but modern transistors use silicon for its higher heat tolerance. Transistors amplify and switch signals. They can be analog or digital. Two prevalent transistors today are Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) and Bipolar Junction Transistors (BJT).In your own understanding in the field of electronics can you compare and contrast which one has merit over the other ?arrow_forwardFigure 3 shows two current mirrors based on MOSFET. Derive a formula relating the input current In to the output current Iout for the current mirror on the left of Figure 3 stating any assumption. (a) (b) Derive the input resistance Rin and output resistance Rout for the circuit on the left of Figure 3. State any assumption. (c) Derive a formula relating In and Iout for the circuit on the right of Figure 3 assuming that Mi and M2 are identical, and that the length and width of the channel for the transistor M4 are double respect to those of M3. State any assumption. V DD M. M4 M1 M2 M1 M2 V'ss =0 V Vss=0 V Figure 3arrow_forward. Design a fixed bias-transistor circuit using V = Vcc = 10 V for a Q-point of Iç = 5 mA and Va 4 V. Assume Boc = 100.The design involves finding R, and Rc. inakomeont thot one is hiasedarrow_forward
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