Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 8, Problem 8.48P

Consider the class−AB output stage in Figure P8.48. The parameters are: V + = 12 V , V = 12 V , R L = 100 Ω , and I B i a s s = 5 mA . The transistor and diode parameters are I S = 10 13 A . The transistor current gains are β n = 100 and β p = 20 for the npn and pnp devices, respectively. (a) For υ O = 0 , determine V B B , and the quiescent collector current and base−emitter voltage for each transistor. (b) Repeat part (a) for υ O = 10 V . What is the power delivered to the load and what is the power dissipated in each transistor?

Chapter 8, Problem 8.48P, Consider the classAB output stage in Figure P8.48. The parameters are: V+=12V , V=12V , RL=100 , and
Figure P8.48

(a)

Expert Solution
Check Mark
To determine

The value of VBB , quiescent collector current and base emitter voltage for each transistor.

Answer to Problem 8.48P

Thevalue of the voltage VBB is 1.28V , the value of the current IC2 is 49.95×103A , IC1 is 49.97×103A and the value of the current IC3 is 0.4995×103A .

Explanation of Solution

Calculation:

The given diagram is shown in Figure 1

  Microelectronics: Circuit Analysis and Design, Chapter 8, Problem 8.48P

The conversion from mA into A is given by,

  1mA=103A

The conversion from 5mA into A is given by,

  5mA=5×103A

The expression for the value of VBB by neglecting the base voltage is given by,

  VBB=2VD=2VTlnIBiasIS

Substitute 0.026V for VT , 5×103A for IBias and 1013A for IS in the above equation,.

  VBB=2(0.026V)ln5× 10 3A 10 13A=1.281V

The expression for the value of the current IC3 is given by,

  IC3=(βp1+βp)IE3

The expression for the value of the current IC2 is given by,

  IC2=βn(βp1+βp)IE3 ...... (1)

The expression for the value of the current IB2 is given by,

  IB2=IC3

Substitute (βp1+βp)IE3 for IC3 in the above equation.

  IB2=(βp1+βp)IE3

The expression for the value of the current IE1 is given by,

  IE1=IC(1+βnβn)

The expression for the value of the current IE3 is given by,

  IE3=(1+βpβp)IC3 ...... (2)

The expression for the value of base to emitter voltage VBE1 is given by,

  VBE1=VTln(I C 1 IS)

The expression for the value of base to emitter voltage VBE3 is given by,

  VBE3=VTln(I C 1 IS)

The expression for the value of IE1 is given by,

  IE1=IE3+IC2

Substitute (βp1+βp)IE3 for IC2 in the above equation.

  IE1=IE3+βn(βp1+βp)IE3

Substitute IC(1+βnβn) for IE1 and (1+βpβp)IC3 for IE3 in the above equation.

  IC1(1+βnβn)=(1+βn( β p 1+ β p ))(1+βpβp)IC3

Substitute 100 for βn and 20 for βp in the above equation.

  IC1( 1+100 100)=(1+100( 20 1+20 ))( 1+20 20)IC3IC1=100.05IC3

The expression for the value of base to emitter voltage VBE1 is given by,

  VBE1=VTln(I C 1 IS) ...... (3)

The expression for the value of base to emitter voltage VBE3 is given by,

  VBE3=VTln(I C 3 IS) ...... (4)

The expression for the value of the base to emitter voltage VBE1 is given by,

  VBE1+VEB3=VBB

Substitute VTln(I C 1 IS) for VBE1 and VTln(I C 1 IS) for VBE3 in the above equation.

  VTln(I C 1 IS)+VTln(I C 3 IS)=VBB

Substitute 100.05IC3 for IC1 in the above equation.

  VTln( 100.05 I C 3 I S )+VTln( I C 3 I S )=VBBIC3IS 100.05exp( V BB V T )

Substitute 1.281V for VBB and 0.026V for VT in the above equation.

  IC3= 10 13A 100.05exp( 1.281V 0.026V )=0.4995×103A

Substitute 0.4995×103A for IC3 and 20 for βp in equation (2).

  IE3=( 1+20 20)(0.4995× 10 3A)=0.5245×103A

The expression for the value of the current IC1 is given by,

  IC1=100.05IC3

Substitute 0.4995×103A for IC3 in the above equation.

  IC1=100.05(0.4995× 10 3A)=49.97×103A

Substitute 0.4995×103A for IC3 and 20 for βp in equation (1).

  IC2=20(201+20)(0.4995×103A)

Substitute 0.026V for VT , 49.97×103A for IC1 and 1013A for IS in equation (3).

  VBE1=0.026V[ln( 49.97× 10 3 A 10 13 A)]=0.70037V

Substitute 0.026V for VT , 0.4995×103A for IC3 and 1013A for IS in equation (4).

  VBE3=0.026V[ln( 0.4995× 10 3 A 10 13 A)]=0.58062V

The expression for the value of the voltage VBB is given by,

  VBB=VBE1+VBE3

Substitute 0.70037V for VBE1 and 0.58062V for VBE3 in the above equation.

  VBB=0.70037V+0.58062V=1.28V

Conclusion:

Therefore, the value of the voltage VBB is 1.28V , the value of the current IC2 is 49.95×103A , IC1 is 49.97×103A and the value of the current IC3 is 0.4995×103A .

(b)

Expert Solution
Check Mark
To determine

The value of VBB , quiescent collector current and base emitter voltage for each transistor and the power delivered to the load.

Answer to Problem 8.48P

The value of power delivered Q1 is 0.34W , the power delivered to transistor Q2 is 0.352W and Q2 is 3.4W . The power delivered to the load is 1W , the value of collector current for transistor Q1 is 0.1A , iC2 is 15.98×103A , iC3 is 0.1589×103A , the voltage VBB is 1.2694V , the value of the voltage VBE1 is 0.7184V and the voltage VEB3 is 0.55099V .

Explanation of Solution

Calculation:

The expression for the value of the current iE1 is given by,

  iE1=vORL

Substitute 10V for vO and 100Ω for RL in the above equation.

  iE1=10V100Ω=0.1A

The expression for the voltage VBB is given by,

  VBB=2(VT)ln(I BiasIS)

Substitute 1013A for IS , 0.026V for VT and 5×103A for IBias in the above equation.

  VBB=2(0.026V)ln( 5× 10 3 A 10 13 A)=1.2694V

The expression for the voltage VBE1 is given by,

  VBE1=VTln(i E 1 IS)

Substitute 0.026V for VT , 0.1A for iE1 and 1013A for IS in equation (4).

  VBE1=0.026V[ln( 0.1A 10 13 A)]=0.7184V

The expression for the value of the voltage is given by,

  VBE3=VBBVBE1

Substitute 0.7184V for VBE1 and 1.2694V for VBB in the above equation.

  VBE3=1.2694V0.7184V=0.55099V

The expression for the value of the current for IC3 is given by,

  IC3=ISexp(V E B 3 VT)

Substitute 1013A for IS , 0.026V for VT and 0.55099V for VBE3 in the above equation.

  IC3=1013Aexp( 0.55099V 0.026V)=0.1598×103A

The expression for the value of the power delivered to the load is given by,

  P¯L=vO2RL

Substitute 10V for vo and 100Ω for RL in the above equation.

  P¯L=( 10V)100Ω=1W

The expression for the power delivered in the transistor of Q1 is given by,

  PQ1=iE1(IC3)[vO(VBEV+)]

Substitute 0.1A for iE1 , 0.1598×103A for IC3 , 12V for V+ , 0.7V for VBE and 10V for vO in the above equation.

  PQ1=(0.1598× 10 3A)(0.1A)[10V(0.7V12V)]=0.34W

The expression for the power delivered in the transistor of Q3 is given by,

  P¯Q3=(IC3)[vO(VBEV+)]

Substitute 0.1598×103A for IC3 , 12V for V+ , 0.7V for VBE and 10V for vO in the above equation.

  P¯Q3=(0.1598× 10 3A)[10V(0.7V12V)]=3.4W

The expression for the value of the current iC2 is given by

  iC2=βniC3

Substitute 0.1598×103A for IC3 and 100 for βn in the above equation.

  iC2=100(0.1598× 10 3A)=15.98×103A

The expression for the value of the power dissipated in the transistor Q2 is given by,

  PQ2=iC2[vOV]

Substitute 15.98×103A for iC2 , 10V for vO and 12V for V in the above equation.

  PQ2=(15.98× 10 3A)[10V(12V)]=0.352W

Conclusion:

Therefore, the value of power delivered Q1 is 0.34W , the power delivered to transistor Q2 is 0.352W and Q2 is 3.4W . The power delivered to the load is 1W , the value of collector current for transistor Q1 is 0.1A , iC2 is 15.98×103A , iC3 is 0.1589×103A , the voltage VBB is 1.2694V , the value of the voltage VBE1 is 0.7184V and the voltage VEB3 is 0.55099V .

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Chapter 8 Solutions

Microelectronics: Circuit Analysis and Design

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