For the p−channel JFET source−follower circuit in Figure P4.78, the transistor parameters are: I D S S = 2 mA , V P = + 1.75 V , and λ = 0 . (a) Determine I D Q and V S D Q . (b) Determine the small−signal gains A υ = υ o / υ i and A i = i o / i i . (c) Determine the maximum symmetrical swing in the output voltage. Figure P4.78
For the p−channel JFET source−follower circuit in Figure P4.78, the transistor parameters are: I D S S = 2 mA , V P = + 1.75 V , and λ = 0 . (a) Determine I D Q and V S D Q . (b) Determine the small−signal gains A υ = υ o / υ i and A i = i o / i i . (c) Determine the maximum symmetrical swing in the output voltage. Figure P4.78
For the p−channel JFET source−follower circuit in Figure P4.78, the transistor parameters are:
I
D
S
S
=
2
mA
,
V
P
=
+
1.75
V
, and
λ
=
0
. (a) Determine
I
D
Q
and
V
S
D
Q
. (b) Determine the small−signal gains
A
υ
=
υ
o
/
υ
i
and
A
i
=
i
o
/
i
i
. (c) Determine the maximum symmetrical swing in the output voltage.
Figure P4.78
(a)
Expert Solution
To determine
The value of the IDQ and VSDQ .
Answer to Problem 4.78P
The value of the drain current IDSQ is 1mA and VSDQ is 5V .
Explanation of Solution
Given:
The given circuit is shown below.
Figure 1
Calculation:
The value of the voltage across the resistance R1 is given by,
VR1=90kΩ90kΩ+110kΩ(10V)=4.5V
The expression to determine the value of the voltage VR1 is given by,
VR1=VG−(5kΩ)IQ
Substitute 4.5V for VR1 in the above equation.
4.5V=VG−(5kΩ)IQIQ=4.5V−VSG5kΩ
The expression for the drain current in terms of gate to source voltage is given by,
ID=4.5V+VSG5kΩ
The expression to determine the value of the drain current is given by,
ID=IDSS(1−VGSVP)2 ….. (1)
Substitute 2mA for IDSS , 4.5V−VSG5kΩ for ID and 1.75V for VP in the above equation.
4.5V−VSG5kΩ=(2mA)(1−VGS1.75V)2VGS=0.51V
Substitute 2mA for IDSS , 0.51V for VGS and 1.75V for VP in equation (1).
ID=(2mA)(1−0.51V1.75V)2=1mA
Mark the values and redraw the circuit.
The required diagram is shown in Figure 2
The expression to determine the value of the VSDQ is given by,
VSDQ=10V−ID(5mA)
Substitute 1mA for ID in the above equation.
VSDQ=10V−(1mA)(5mA)=5V
Conclusion:
Therefore, the value of the drain current IDSQ is 1mA and VSDQ is 5V .
(b)
Expert Solution
To determine
The current gain and the voltage gain of the circuit.
Answer to Problem 4.78P
The value of the current gain of the circuit is 4.18 and the voltage gain is 0.844 .
Explanation of Solution
Calculation:
The expression for conductance is given by,
gm=2IDSS|VP|(1−VGSVP)
Substitute 2mA for IDSS , 1.75V for VP and 0.51V for VGS in the above equation.
gm=2(2mA)|1.75V|(1−0.51V1.75V)=1.62mA/V
The expression to determine the voltage gain is given by,
Av=gm(RS||RL)1+gm(RS||RL)
Substitute 1.62mA/V for
gm , 5kΩ for RL and 10kΩ for RS in the above equation.
(i)
Find the inverse z-transform of the system H(z) =
for the following regions of
convergence. Write in the final answer for each case in the allocated rectangular box
below
(a) |z| 3
(c) 1
Q3:
Material A and Material B are collected in a tank as
shown where the system consists of three Push-Button,
three Level Sensors, two Inlet valve, one Outlet valve,
Heater, Temperature Sensor, Agitator Motor, and
Alarm Light. Material A and Material B are to be
mixed and heated until it reaches 90°C temperature,
and it will be drain using outlet valve also high-level
Alarm Light will come ON when the tank is full and
stay on even if the tank level drops until the operator
press Reset Push-Button. Implement automation of
this system in PLC using Ladder Diagram
programming language (Note: The tank is fed with
Material A before B and the temperature sensor can
withstand 200°C and it gives voltage from 0 to 10
volts)
(25 Marks)
Valve A
Agitator
Motor
Valve B
Level B
Heater
E
Level A
Low Level
Sta
Start Push-Button
Stop Push-Button
36.
ویر
نکند
Temperature sensor
Outlet
Valve
Reset Push-Button
Alarm Light
.Explain how a gated J-K latch operates differently from an edge-triggered J-K flip-flop.
. For the gated T Latch circuit, answer the following:
a) Draw the gate-level diagram of a gated T latch using basic logic gates and SR latch
b) Write the characteristic equation.
c) Draw the state diagram.
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