Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 4, Problem 4.8EP

The circuit and transistor parameters for the source−follower amplifier shown in Figure 4.29 are R S = 2 k Ω , V T P = 1.2 V , k p = 40 μ A/V 2 , and λ = 0 . (a) Design the transistor width−to−length ratio such that I D Q = 1.5 mA . (b) Find the small−signal voltage gain. (c) Using the results of part (a), determine the value of R L that will result in a 10 percent reduction in voltage gain. (Ans. (a) ( W / L ) = 117 ,(b) A υ = 0.882 , (c) R L = 2.12 k Ω

Chapter 4, Problem 4.8EP, The circuit and transistor parameters for the sourcefollower amplifier shown in Figure 4.29 are
Figure 4.29 Figure for Exercise Ex 4.8

(a)

Expert Solution
Check Mark
To determine

The value of width to length ratio of MOSFET.

Answer to Problem 4.8EP

  WL=117

Explanation of Solution

Given Information:

The given circuit is shown below.

  Microelectronics: Circuit Analysis and Design, Chapter 4, Problem 4.8EP , additional homework tip  1

  Rs=2kΩ,VTP=1.2VkP'=40μAV2,λ=0IDQ=1.5mA

Calculation:

The coupling capacitor acts like open circuit for DC value calculation.

The modified figure is:

  Microelectronics: Circuit Analysis and Design, Chapter 4, Problem 4.8EP , additional homework tip  2

From the circuit:

  Vs=5IDRsVs=51.5×2Vs=2VVSG=VsVGVSG=20VSG=2VVSD=VSVDVSD=2(5)VSD=7VVSG>|VTP|VSD>VSG|VTP|

Hence, transistor operates in saturation region.

The expression of drain current is:

  ID=Kp(VSG|VTP|)21.5×103=12kp'(WL)(21.2)21.5×103=12×40×106×(WL)×0.64WL=300040×0.64WL=117

(b)

Expert Solution
Check Mark
To determine

The value of small signal voltage gain.

Answer to Problem 4.8EP

  Av=0.882

Explanation of Solution

Given Information:

The given circuit is shown below.

  Microelectronics: Circuit Analysis and Design, Chapter 4, Problem 4.8EP , additional homework tip  3

  Rs=2kΩ,VTP=1.2VkP'=40μAV2,λ=0IDQ=1.5mA

Calculation:

The value of gm,ro is:

  gm=2KpIDgm=212kP'(WL)IDgm=2×40×106×117×1.5×103gm=3.75mAVro=1λIDro=10×IDro=

The coupling capacitor acts like short circuit for AC value calculation. The DC voltage source is short circuited.

The modified figure is:

  Microelectronics: Circuit Analysis and Design, Chapter 4, Problem 4.8EP , additional homework tip  4

The value of output voltage is:

  Vo=(gmVsg)(Rs||RL)...(1)

Applying Kirchhoff’s voltage law from input to output:

  Vi=Vsg+VoVi=Vsg(gmVsg)(Rs||RL)Vsg=Vi1+gm(Rs||RL)

From equation (1):

  Vo=gm(Rs||RL)1+gm(Rs||RL)×ViVoVi=gm(Rs||RL)1+gm(Rs||RL)Av=gm(Rs||RL)1+gm(Rs||RL)

Plugging the values:

  Av=3.75(2)1+3.75(2)(RL=)Av=0.882

(c)

Expert Solution
Check Mark
To determine

The value of load resistance RL .

Answer to Problem 4.8EP

  RL=2.12

Explanation of Solution

Given Information:

The given circuit is shown below.

  Microelectronics: Circuit Analysis and Design, Chapter 4, Problem 4.8EP , additional homework tip  5

  Rs=2kΩ,VTP=1.2VkP'=40μAV2,λ=0IDQ=1.5mA

Calculation:

The new value of voltage gain is:

  Av'=AvAv(10%)Av'=0.8820.1×0.882Av'=0.794

The value of load resistance is determined as follows:

  Av'=gm(Rs||RL)1+gm(Rs||RL)gm(Rs||RL)=Av'+Av'gm(Rs||RL)gm(Rs||RL)Av'gm(Rs||RL)=Av'gm(Rs||RL)(1Av')=Av'gm(Rs||RL)=Av'1Av'gm(Rs||RL)=0.79410.7943.75(2||RL)=3.8542||RL=1.0282RL2+RL=1.0282RL=2.056+1.028RLRL=2.0560.972RL=2.12

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Chapter 4 Solutions

Microelectronics: Circuit Analysis and Design

Ch. 4 - The commonsource amplifier in Figure 4.23 has...Ch. 4 - Consider the commonsource amplifier in Figure 4.24...Ch. 4 - The parameters of the transistor shown in Figure...Ch. 4 - The sourcefollower circuit in Figure 4.26 has...Ch. 4 - The circuit and transistor parameters for the...Ch. 4 - Consider the circuit shown in Figure 4.28 with...Ch. 4 - Prob. 4.8TYUCh. 4 - The transistor in the sourcefollower circuit shown...Ch. 4 - Consider the circuit shown in Figure 4.35 with...Ch. 4 - For the circuit shown in Figure 4.32, the circuit...Ch. 4 - The bias voltage for the enhancementload amplifier...Ch. 4 - Assume the depletionload amplifier in Figure...Ch. 4 - For the circuit shown in Figure 4.45(a), assume...Ch. 4 - The transconductance gm of the transistor in the...Ch. 4 - The transconductance gm of the transistor in the...Ch. 4 - For the enhancement load amplifier shown in Figure...Ch. 4 - For the cascade circuit shown in Figure 4.49, the...Ch. 4 - The transistor parameters of the NMOS cascode...Ch. 4 - The transistor parameters of the circuit in Figure...Ch. 4 - Reconsider the sourcefollower circuit shown in...Ch. 4 - Prob. 4.13TYUCh. 4 - For the circuit shown in Figure 4.59, the...Ch. 4 - Discuss, using the concept of a load line, how a...Ch. 4 - How does the transistor widthtolength ratio affect...Ch. 4 - Discuss the physical meaning of the smallsignal...Ch. 4 - Prob. 4RQCh. 4 - Prob. 5RQCh. 4 - Discuss the general conditions under which a...Ch. 4 - Why, in general, is the magnitude of the voltage...Ch. 4 - What are the changes in dc and ac characteristics...Ch. 4 - Sketch a simple sourcefollower amplifier circuit...Ch. 4 - Sketch a simple commongate amplifier circuit and...Ch. 4 - Prob. 11RQCh. 4 - Prob. 12RQCh. 4 - State the advantage of using transistors in place...Ch. 4 - Prob. 14RQCh. 4 - An NMOS transistor has parameters VTN=0.4V ,...Ch. 4 - A PMOS transistor has parameters VTP=0.6V ,...Ch. 4 - An NMOS transistor is biased in the saturation...Ch. 4 - The minimum value of smallsignal resistance of a...Ch. 4 - An nchannel MOSFET is biased in the saturation...Ch. 4 - The value of for a MOSFET is 0.02V1 . (a) What is...Ch. 4 - Prob. 4.7PCh. 4 - The parameters of the circuit in Figure 4.1 are...Ch. 4 - The circuit shown in Figure 4.1 has parameters...Ch. 4 - For the circuit shown in Figure 4.1, the...Ch. 4 - In our analyses, we assumed the smallsignal...Ch. 4 - Using the results of Problem 4.11, find the peak...Ch. 4 - Consider the circuit in Figure 4.14 in the text....Ch. 4 - A commonsource amplifier, such as shown in Figure...Ch. 4 - For the NMOS commonsource amplifier in Figure...Ch. 4 - The parameters of the circuit shown in Figure...Ch. 4 - Repeat Problem 4.15 if the source resistor is...Ch. 4 - The ac equivalent circuit of a commonsource...Ch. 4 - Consider the ac equivalent circuit shown in Figure...Ch. 4 - The transistor in the commonsource amplifier in...Ch. 4 - The parameters of the MOSFET in the circuit shown...Ch. 4 - For the commonsource amplifier in Figure P4.22,...Ch. 4 - The transistor in the commonsource circuit in...Ch. 4 - Prob. 4.24PCh. 4 - For the commonsource circuit in Figure P4.24, the...Ch. 4 - Design the common-source circuit in Figure P4.26...Ch. 4 - For the commonsource amplifier shown in Figure...Ch. 4 - For the circuit shown in Figure P4.28, the...Ch. 4 - Design a commonsource amplifier, such as that in...Ch. 4 - The smallsignal parameters of an enhancementmode...Ch. 4 - The opencircuit (RL=) voltage gain of the ac...Ch. 4 - Consider the sourcefollower circuit in Figure...Ch. 4 - The source follower amplifier in Figure P4.33 is...Ch. 4 - Consider the circuit in Figure P4.34. The...Ch. 4 - The quiescent power dissipation in the circuit in...Ch. 4 - The parameters of the circuit in Figure P4.36 are...Ch. 4 - Consider the source follower circuit in Figure...Ch. 4 - For the sourcefollower circuit shown in Figure...Ch. 4 - In the sourcefollower circuit in Figure P4.39 with...Ch. 4 - For the circuit in Figure P4.39, RS=1k and the...Ch. 4 - Prob. D4.41PCh. 4 - The current source in the sourcefollower circuit...Ch. 4 - Consider the sourcefollower circuit shown in...Ch. 4 - Prob. 4.44PCh. 4 - Figure P4.45 is the ac equivalent circuit of a...Ch. 4 - The transistor in the commongate circuit in Figure...Ch. 4 - The smallsignal parameters of the NMOS transistor...Ch. 4 - For the commongate circuit in Figure P4.48, the...Ch. 4 - Consider the PMOS commongate circuit in Figure...Ch. 4 - The transistor parameters of the NMOS device in...Ch. 4 - The parameters of the circuit shown in Figure 4.32...Ch. 4 - For the commongate amplifier in Figure 4.35 in the...Ch. 4 - Consider the NMOS amplifier with saturated load in...Ch. 4 - For the NMOS amplifier with depletion load in...Ch. 4 - Consider a saturated load device in which the gate...Ch. 4 - The parameters of the transistors in the circuit...Ch. 4 - A sourcefollower circuit with a saturated load is...Ch. 4 - For the sourcefollower circuit with a saturated...Ch. 4 - The transistor parameters for the commonsource...Ch. 4 - Consider the circuit in Figure P4.60. The...Ch. 4 - The ac equivalent circuit of a CMOS commonsource...Ch. 4 - Consider the ac equivalent circuit of a CMOS...Ch. 4 - The parameters of the transistors in the circuit...Ch. 4 - Consider the sourcefollower circuit in Figure...Ch. 4 - Figure P4.65 shows a commongate amplifier. The...Ch. 4 - The ac equivalent circuit of a CMOS commongate...Ch. 4 - The circuit in Figure P4.67 is a simplified ac...Ch. 4 - Prob. 4.68PCh. 4 - The transistor parameters in the circuit in Figure...Ch. 4 - Consider the circuit shown in Figure P4.70. The...Ch. 4 - For the circuit in Figure P4.71, the transistor...Ch. 4 - For the cascode circuit in Figure 4.51 in the...Ch. 4 - The supply voltages to the cascode circuit in...Ch. 4 - Consider the JFET amplifier in Figure 4.53 with...Ch. 4 - For the JFET amplifier in Figure P4.75, the...Ch. 4 - The parameters of the transistor in the JFET...Ch. 4 - Consider the sourcefollower WET amplifier in...Ch. 4 - For the pchannel JFET sourcefollower circuit in...Ch. 4 - The pchannel JFET commonsource amplifier in Figure...Ch. 4 - Prob. 4.82CSPCh. 4 - A discrete commonsource circuit with the...Ch. 4 - Consider the commongate amplifier shown in Figure...Ch. 4 - A sourcefollower amplifier with the configuration...
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