Chapter 4, Problem 4.10TYU

For the circuit shown in Figure 4.32, the circuit parameters are: $V^{+}=5\text{V}$ , $V^{-}=-5\text{V}$ , $R_G=100\text{k}\Omega$ , $R_L=4\text{k}\Omega$ , and $I_{DQ}=0.5\text{mA}$ . The transistor parameters are $V_{TN}=1\text{V}$ and $\lambda =0$ . The circuit is driven by a signal current source $I_i$ . Redesign $R_D$ and $g_m$ such that the transfer function $V_o,I_i$ is $2.4\text{k}\Omega$ and the input resistance is $R_i=350\Omega$ . Determine $V_{GSQ}$ and show that the transistor is biased in the saturation region. (Ans. $g_m=2.86\text{mA/V}$ , $R_D=6\text{k}\Omega$ , $V_{GSQ}=1.35\text{V}$ )