The BiCMOS circuit shown in Figure P11.82 is equivalent to a pnp bipolar transistor with an infinite input impedance. The bias current is
(a)
To sketch: The small-signal equivalent circuit of the given BiCMOS circuit.
Answer to Problem 11.82P
The required sketch is shown in Figure 3.
Explanation of Solution
Given:
The given diagram is shown below.
Calculation:
Mark the value and redraw the circuit.
The required diagram is shown in Figure 1
Figure 1
The small signal equivalent circuit is shown in Figure 2
Figure 2
Conclusion:
Therefore, the required sketch is shown in Figure 2
(b)
The small signal parameters for each of the transistor.
Answer to Problem 11.82P
The value of small signal parameters are
Explanation of Solution
iven:
The given diagram is shown below.
Calculation:
The value of the current through the resistance
The expression for the resistance
Substitute
The value of the drain current is calculated as,
The expression for the collector current is given by,
Substitute
The value of the base current is calculated as,
The transconductance of the first transistor is given by,
Substitute
The transconductance of the first transistor is given by,
Substitute
The value of the resistance
Conclusion:
Therefore, the value of small signal parameters are
(c)
The value of small signal voltage gain for the given values of load resistor.
Answer to Problem 11.82P
The value of the small signal voltage gain for
Explanation of Solution
Given:
The given diagram is shown below.
The given values of load resistor is
Calculation:
The expression for the voltage
The expression for the gate to source voltage is given by,
The expression to determine the value of the output voltage is given by,
Substitute
Substitute
Conclusion:
Therefore, the value of the small signal voltage gain for
Want to see more full solutions like this?
Chapter 11 Solutions
Microelectronics: Circuit Analysis and Design
- 2) Consider the circuit given below. (Assume: K-4mA/V', Vt=-1V, A=0, (K= µCox.(W/L)) da Perform DC analysis and calculate Va. Vsg, Vs, voltages, and Ip, gm, ro values bo Draw a small-signal equivalent circuit Co Calculate Av, Rin, Rout values as shown on the schematic Also ) satwaton mode Test for Fill inthe table VG VSG O2m A Rin Vs QUin ID vo Coo 9m Ro Av Rout Rin Routarrow_forward(b) Draw the ID - VD curves for this MOSFET for ±VD for V₁ = 0 and V₁ = 1 V. VȚ = 1V. n V₁ + p-type D ID V₁arrow_forwardQUESTION 6: Consider the circuit of Figure P11.3 with transistor parameters ß= 155 , V4=0, and VBE(on) = 0.66 V. The circuit is biased by V*= 6 V and V = -6 V. Design the circuit such that the Q-point values are Icı = Ic2 = 140 µA, and vo1 =vo2 = 1.2 V for vị = v2 = 0. Format : 98.34 Rc (kN) Format : 47.93 RE (kN) Ici RC RC v02 10a RE Figure P11.3arrow_forward
- Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layersarrow_forwardCoonsider the common emitter amplifier shown in figure below. Assume a β of 100, VBE = 0.7V, VT = 25mA and VA = 100V. Draw an equivalent DC model and determine the rπ, transconductance (gm) and ro. Draw an equaivalent AC model using the small-signal model Find an expression for vbe and vo in terms of the input voltagearrow_forward(ii) Calculate the RB, Rc, and the minimum power rating of the transistor (Note: the actual power rating should be greater).arrow_forward
- It is desired to determine the operating point by drawing the DC load line of the transistor (B = 125) Which is the VCEQ valuearrow_forwardPrelab: Using the BJT large signal model for the circuit in Figure 1, determine the Vub voltage required to drive a collector current of I, = 0.5 mA. Use RB = 220 kN, Rc = 2.05 kN, RE = 1.05 kN, and Vee = 5V. Assume Is = 50nA and ß = 250. (Hint: Find Vbe using Ic, then use KVL to find Vbb, remember that Ib can be found using the Ic/ ß relationship) RC Voc R3 bb RE Figure 1 NPN BJT under DC Biasarrow_forwardanswer asaparrow_forward
- What is the output resistance of this circuit in units of ohms? All of the transistors are n-type MOSFETs with kp=0.05 and lambda=0.1. The two DC biasing voltages (Vbias1 and Vbias2) are set to create a current through M3 of 2 mA, current through M2 of 1 mA, and current through M1 of 1 mA. (Hint: Rout is not 10000.)arrow_forwardThis is about BJT. I'm looking for the Ic, and Ib of this circuit.arrow_forward1. For the JFET in Figure 7.25, VGs(of) -2 to -5 V and Ipss 5 to 10 mA. %3D (a) Using these values, plot the maximum transconductance curve, minimum transconductance curve, DC bias line and the range of Q-point values. (b) Determine the values of VGs and Ip at the minimum Q-point. +VDD 9+20 V R = 2 MQ Rp = 25 kQ 1 R2 = 3 MQ Rs = 10 k WHarrow_forward
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,