a.
The small-signal voltage gain
a.
Answer to Problem 11.84P
Explanation of Solution
Given:
The given circuit is,
The two amplifying transistors
Calculation:
Consider the given figure,
Now find trans-conductance,
Now calculate
Now consider small-signal equivalent circuit,
Apply nodal method at node
Now apply nodal method at node
Now consider,
Find
Apply nodal analysis at node
Hence,
b.
The small-signal voltage gain
b.
Answer to Problem 11.84P
Explanation of Solution
Given:
The given circuit is,
The two amplifying transistors
Calculation:
Consider the given figure,
Now find trans-conductance,
Now,
Now consider circuit,
Apply nodal at top part of the circuit,
Apply nodal at middle part of the circuit,
Find
Apply nodal analysis at node
Hence,
Want to see more full solutions like this?
Chapter 11 Solutions
Microelectronics: Circuit Analysis and Design
- Instruction/s: Draw, Illustrate and label your schematic diagram before solving the problem. 1.) Given a Fixed-Biased transistor circuit with Beta DC is 200 , voltage at common collector is +22v ,base supply voltage is +11V, Base resistor is 47kOhms , collector resistor is 390 ohms ,Voltage at Base-emitter junction is 0.7v. Determine the Q-point of collector current and Voltage at collector-emitter junction. These is the example or guide that might help in answering the problem.arrow_forwardDraw, Illustrate and label your schematic diagram before solving the problem. 1) Given a Fixed-Biased transistor circuit with Beta DC is 200 , voltage at common collector is +22v ,base supply voltage is +11V, Base resistor is 47kOhms , collector resistor is 390 ohms ,Voltage at Base-emitter junction is 0.7v. Determine the Q-point of collector current and Voltage at collector-emitter junction. These might be help as a guide to solve the problem.arrow_forwardName: (11) The supply voltage VCC equals 9V. The base resistor RB is 42. Take 0.6V for the knee voltage of the base-emitter diode. Draw the load line for a short-circuit current of 15mA (a) What is the value of the collector resistor RC in that case? (b) What is then the voltage Va across the transistor? (c) What is then the current le through the transistor? RB www VCC 9.0V RC Ic (mA) 15 D 10 Student nr. saturation region 5 Answers: (a) RC- (b) Va (c) Ic= active region (12) Same circuit and transistor as above, but now with a short- scircuit current of 5 mA. Draw the new load line. (a) What is the value of the collector resistor RC in that case? (b) What is then the voltage Vc across the transistor? (c) What is then the current Ic through the transistor? cutoff region 10 15 VCE (V) {npn} 20 Answers: (a) RC = (b) VCE= (c) Ic= L₂=0.4 mA 1₁-0.3 mA IB=0.2 mA Ig=0.1mA Ig=0 mAarrow_forward
- A certain npn silicon transistor has vBE=0.7 V for iB=0.1 mA at a temperature of 30°C. Sketch the input characteristic to scale at 30°C. What is the approximate value of vBE for iB = 0.1 mA at 180°C? (Use the rule of thumb that vBE is reduced in magnitude by 2 mV per degree increase in temperature.) Sketch the input characteristic to scale at 180°C.arrow_forwardTransistors originally were made with germanium but modern transistors use silicon for its higher heat tolerance. Transistors amplify and switch signals. They can be analog or digital. Two prevalent transistors today are Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) and Bipolar Junction Transistors (BJT).In your own understanding in the field of electronics can you compare and contrast which one has merit over the other ?arrow_forward⦁ Consider below BJT circuit and determine base, collector, and emitter currents in 1 and 2. Verify your operation mode assumption. Show your solution steps clearly and explain them.( = 80, ( = 0.7arrow_forward
- Please explain in detailarrow_forwardTo operate as an amplifier, it is the base of an npn transistor... Please select one: a. 0V b. positive by collector c. negative relative to emitter d. positive relative to emitterarrow_forwarda) The n-channel JFET and the D-MOSFET have very similar I-V output characteristics. Which of these two structures can be operated in enhancement mode and why is that possible?arrow_forward
- Just need 1d and 1e answered.arrow_forward........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configurationarrow_forwardsolve for the collector saturation current of an emitter stabilized bias circuit with Vcc=18V, RB=720k ohms, RC=2.7k ohms, RE=300 ohms and beta=100. A. 6mA B. 7mA C. 8mA D. 9mAarrow_forward
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,