Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

Question

Want to see more full solutions like this?

Answer 1

Textbook Question

Chapter 3, Problem 3.17P

Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Want to see more full solutions like this?

Subscribe now to access step-by-step solutions to millions of textbook problems written by subject matter experts!

Students have asked these similar questions

Determine the drain current of the source follower circuit shown below. Assume R = 2.5k0, L= 5µm, and W = 10um. M1 1.5V- NMOS Parameter PMOS NMOS K 120 μΑ/V 40 μΑ/V Vro 800 mV -900 mV R1 0.5 vỹ 0.6 vV R 20F 0.7 V 0.6 V 297.8594 uA 1.8501 µA 42.3560 μΑ 1.8510 mA AS-

Determine the drain current of the source follower circuit shown below. Assume R = 2.5k0, L = 5µm, and W = 10um. M1 NMOS 1.5V- Parameter NMOS PMOS 120 μΑ/νε 40 μΑ/V Vro 800 mV -900 mV R1 0.5 vỹ 0.6 vỹ 0.7 V 0.6 V R O 1.8501 µA O 42.3560 µA O 1.8510 mA O 297.8594 uA

1. The drain current for the E-MOSFET shown in the following figure is 3.0 mA. What type of bias i this? a. Can a JFET use this type of bias? b. Compute the value of VD. c. Compute the value of VG- RG www 10 ΜΩ +VDD +15 V www RD · 2.7 ΚΩ =I

Answer 2

Textbook Question

Chapter 3, Problem 3.17P

Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Want to see more full solutions like this?

Subscribe now to access step-by-step solutions to millions of textbook problems written by subject matter experts!

Answer 3

Textbook Question

Chapter 3, Problem 3.17P

Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Want to see more full solutions like this?

Subscribe now to access step-by-step solutions to millions of textbook problems written by subject matter experts!

Answer 4

Textbook Question

Chapter 3, Problem 3.17P

Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Want to see more full solutions like this?

Subscribe now to access step-by-step solutions to millions of textbook problems written by subject matter experts!

Answer 5

Textbook Question

Answer 6

Textbook Question

Answer 7

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Answer 8

(a).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.21 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

Answer 9

(a).

Expert Solution

Answer 10

(a).

Expert Solution

Answer 11

Expert Solution

Answer 12

To determine

The value of drain current in PMOS transistor.

Answer 13

Answer to Problem 3.17P

ID=0.21 mA

Answer 14

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.2)−( 0.2)2] =210 μA =0.21 mA

Answer 15

(b).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.66 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

Answer 16

(b).

Expert Solution

Answer 17

(b).

Expert Solution

Answer 18

Expert Solution

Answer 19

To determine

The value of drain current in PMOS transistor.

Answer 20

Answer to Problem 3.17P

ID=0.66 mA

Answer 21

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=0.8 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

Thevalue of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(0.8)−( 0.8)2] =660 μA =0.66 mA

Answer 22

(c).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.81 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

Answer 23

(c).

Expert Solution

Answer 24

(c).

Expert Solution

Answer 25

Expert Solution

Answer 26

To determine

The value of drain current in PMOS transistor.

Answer 27

Answer to Problem 3.17P

ID=0.81 mA

Answer 28

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=1.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD<VSD(sat) .

Hence, the transistor operates in triode region.

The value of drain current is:

ID=Kp[2( V SG−| V TP |)VSD−VSD2] =375 μAV2[2(1.5 )(1.2)−( 1.2)2] =810 μA =0.81 mA

Answer 29

(d).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Answer 30

(d).

Expert Solution

Answer 31

(d).

Expert Solution

Answer 32

Expert Solution

Answer 33

To determine

The value of drain current in PMOS transistor.

Answer 34

Answer to Problem 3.17P

ID=0.844 mA

Answer 35

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=2.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat) is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Answer 36

(e).

Expert Solution

To determine

The value of drain current in PMOS transistor.

Answer to Problem 3.17P

ID=0.844 mA

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Answer 37

(e).

Expert Solution

Answer 38

(e).

Expert Solution

Answer 39

Expert Solution

Answer 40

To determine

The value of drain current in PMOS transistor.

Answer 41

Answer to Problem 3.17P

ID=0.844 mA

Answer 42

Explanation of Solution

Given Information:

VTP=−0.5 V, kp'=50 μAV2W=12 μm, L=0.8 μm, VSG=2 VVSD=3.2 V

Calculation:

The value of conduction parameter Kp is determined as below:

Kp=kp'2(WL) =50 μA V 2 2( 12 μm 0.8 μm) =375 μAV2

The value of VSD(sat)

is determined as:

VSD(sat)=VSG−|VTP| =2−|−0.5| =2−0.5 =1.5 V

Here, VSD>VSD(sat) .

Hence, the transistor operates in saturation region.

The value of drain current is:

ID=Kp[( V SG −| V TP |)2] =375 μAV2[( 1.5 )2] =843.75 μA ≈0.844 mA

Answer 43

Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EP Ch. 3 - The transistor in Figure 3.26(a) has parameters...

Calculate the drain current in a PMOS transistor with parameters V T P = − 0.5 V , k ′ p = 50 μ A/V 2 , W = 12 μ m , L = 0.8 μ m , and with applied voltages of V S G = 2 V and (a) V S D = 0.2 V , (b) V S D = 0.8 V , (c) V S D = 1.2 V , (d) V S D = 2.2 V , and (e) V S D = 3.2 V .

Concept explainers

Videos

Answer to Problem 3.17P

Explanation of Solution

Answer to Problem 3.17P

Explanation of Solution

Answer to Problem 3.17P

Explanation of Solution

Answer to Problem 3.17P

Explanation of Solution

Answer to Problem 3.17P

Explanation of Solution

Want to see more full solutions like this?

Chapter 3 Solutions