The change in the output voltages for the kn' parameter change.
b.
Expert Solution
Answer to Problem 3.47P
When kn'=120×1.05=126μA/V2
V1=2.5 V , V2=6 V
When kn'=120×0.95=114μA/V2
V1=2.5 V , V2=6 V
Explanation of Solution
Given Information:
The given values are:
VTN=0.6 V, kn'=120μA/V2,IDQ=0.8 mA, V1=2.5 V, V2=6 V
The given circuit is shown below.
Parameter kn' changes by +5% and −5%
Calculation:
When there is a change in kn' for all transistors with the same percentage, then it will change current through each transistor which is equal in all transistors. According to the below equation, there is no change in VGSQ . So, there is no effect on output voltages V1 and V2 .
IDQ=kn'2(WL)(VGSQ−VTN)2
From part (a), (WL)1=2.315 , (WL)2=1.585 , (WL)3=3.693
2.315(9.3156−2.526V1−0.6)2=3.693(V1−0.6)22.315(9.3156−2.526V1−0.6)2=3.693(V1−0.6)2(9.3156−2.526V1−0.6)=1.263(V1−0.6)V1=9.47343.789 V
V1=2.5 V
From equation (1),
V2=2.526×2.5−0.3156
V2=6 V
So,
When kn'=kn1'=kn2'=kn3'120×1.05=126μA/V2
V1=2.5 V , V2=6 V
When kn'=kn1'=kn2'=kn3'=120×0.95=114μA/V2
V1=2.5 V , V2=6 V
c.
To determine
The output voltages for a specified change in each transistor.
c.
Expert Solution
Answer to Problem 3.47P
V1=2.468 V , V2=5.919 V
Explanation of Solution
Given Information:
The given values are:
VTN=0.6 V, kn'=120μA/V2,IDQ=0.8 mA, V1=2.5 V, V2=6 V.
The given circuit is shown below.
Also, kn' parameter of M1 decreases by 5% while kn' parameter of M2 and M3 increases by 5%.
Calculation:
When there is a change in kn' for all transistors with the different percentages for transistors, the current through transistors must be equal so that according to the below equation, there may be a change in VGSQ for each transistor. So that output voltages V1 and V2 will change.
IDQ=kn'2(WL)(VGSQ−VTN)2
For M1 :
kn1'=120×0.95=114μA/V2
Now for M2 and M3 :
kn2'=kn3'=120×1.05=126μA/V2
From part(a), (WL)1=2.315 , (WL)2=1.585 , (WL)3=3.693
1142×2.315(9.3156−2.526V1−0.6)2=1262×3.693(V1−0.6)21142×2.315(9.3156−2.526V1−0.6)2=1262×3.693(V1−0.6)2(9.3156−2.526V1−0.6)=1.32784(V1−0.6)V1=9.5123043.85384 V
V1=2.468 V
From equation (1),
V2=2.526×2.468−0.3156
V2=5.919 V
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04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider
circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic
diagram of your design. (10 points)
a)
Figure B3 shows a cross section for a Metal Oxide Semiconductor
Field Effect Transistor (MOSFET) in diagrammatic form.
(i)
(ii)
Sketch the energy band diagram for the MOSFET along the
line X-Y shown in Figure B3 when bias voltages are applied
such that the silicon surface is inverted. Label all important
features of your sketch and state any assumptions made.
Sketch a box plot showing the charges present in the structure
when the silicon surface is inverted. Indicate the source of all
the charges and state whether they are positive or negative.
Source n+
Metal
Silicon
Substrate - p
X
dioxide
Drain n*
8 UTM Figure B.1 shows a diode circuit and its DC load line analysis. Based on the
SUT
information obtained
UT
UT
I kQ
+ VpQ-
3 UTM UTM
Vs
3
500 2
UTM & UM
TM &UTM UTM
UTM &UTM 5 UTM
Figure B.1
UTM & U UTM
VD (V)
0.72
UTM
i UTM
UTM