Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Question
Chapter 3, Problem 3.42P
a.
To determine
The design parameters of the circuit.
To draw: The load line along with Q -point.
b.
To determine
The maximum and minimum Q -point values for the given tolerance.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
explain the operation of matched filter receiver
I we discussed in class, and from your background in Signal and Systems,
16. (10pts) A M-ary QAM system transmits 4.8Kbps with an error rate of less than 10^-6. The
center frequency is 1 GHZ and the channel has a bandwidth of 4 KHz. The channel
attenuates the signal by 10 dB. The noise in the channel can be modeled as AWGN with a
power spectral density of 10^-7 (watts/Hz). Estimate the required transmit signal power, Pt
cts) The modulation format is
DAM
MacBook Air
e
15. From w
12. A communication system uses QAM modulation. The Eb/No is fixed at 15 dB. The
application requires a BER of less than 10^-4. What is the maximum number of symbols that
could be used?
F12
}
1
13: Estimate the bandwidth of a Double Sideband Plus Carrier modulated signal with an
amplitude sensitivity (k) of 0.75 and a message bandwidth of 15KHz.
Short answers, 3pts each
11: Estimate the bandwidth of an FM modulated wave given: deviation ratio of 5 and the
maximum frequency of the message is 15KHz.
Chapter 3 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EPCh. 3 - The transistor in Figure 3.26(a) has parameters...
Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
Knowledge Booster
Similar questions
- MacBook Air J GE F11 + "/ F12 (25) Determine how 20. (45pts) A battery operated sensor transmits to a receiver that is plugged in to a power outlet. The device is continuously operated. The battery is a commercially available 9 V battery with a 1.1 AmpHr capacity. The application requires a bit rate of 120 Mbps and an error rate of less than 10^-5. The channel has a center frequency of 5.8 GHz, a bandwidth of 20 MHz and a noise power spectral density of 10^-12 W/Hz. The maximum distance is 50 meters and the losses in the channel attenuates the signal by 0.05 dB/meter. M-ary FSK is not possible due to bandwidth limitations. a) (5pts) To maximize battery life, what modulation scheme would you use?arrow_forwardCan you please provide an explanation and working. The solution is provided.arrow_forwardplease show working and an explanation. The ans is 20.68 ms.arrow_forward
- A 400V,50Hz,Y-connected, 4-pole,three-phase wound rotor induction motor, the rotor circuit is Y- connected with R2=0.1, X2= 0.8 Q/ph .The measured e.m.f between two slip rings at 1440 rpm is 165 V. If the total stator losses are 650 W,find:airgap power, rotor copper loss, input power, developed (or gross) mechanical power, output power, efficiency, if friction and windage losses are 377W?arrow_forwardconsider the circuit below. Assume it uses ideal diodes with the details specified above. the left side of the circuit is basically a wheatstone bridge, hooked to the right side, which is a differential op amp. a) what is the voltage between junctions "A" and "B" if R2 is 201 ohms? b) what are the minimum and maximum values of R2 can be without the op amp hitting saturation?remember that for the diodes to be ideal you they have to have a turn on voltage of 0.6 volts.arrow_forwardThe capacitors in the circuit shown below have no energy stored in them and then switch “S1” closes at time t=0. Assume the ideal op amp does not saturate. As stated above assume the diodes are ideal with parameters specified above. Diodes are at 0.6 Volts Show the derivations of the mathematical equations for v(t) at Locations A and B for t≥ 0arrow_forward
- Phase (deg) Magnitude (dB) -20 -40 -60 -80 -100 ° -90 -180 -270 10-1 (i) ° Problem 5 Consider a unity (negative) feedback system with a proportional controller. The Bode plot of the plant transfer function G(s) is given as below. System: sys Frequency (rad/s): 1 Magnitude (dB): 13.9 System: sys Frequency (rad/s): 14.9 Magnitude (dB): 6.58 System: sys Frequency (rad/s): 1 Phase (deg): -9.76 10° System: sys Frequency (rad/s): 25.6 Magnitude (dB): -0.0703 System: sys Frequency (rad/s): 41.3 Magnitude (dB): -8.06 System: sys Frequency (rad/s): 200 Magnitude (dB): -44.4 System: sys Frequency (rad/s): 14.9 Phase (deg): -110 System: sys Frequency (rad/s): 25.6 Phase (deg): -148 System: sys Frequency (rad/s): 41.3 Phase (deg): -180 System: sys Frequency (rad/s): 200 Phase (deg): -247 101 Frequency (rad/s) 102 Find the gain crossover frequency, phase crossover frequency, gain margin and phase margin of the system. Is the closed-loop system stable? (ii) What is the steady-state error of the…arrow_forwardsolve and show in detail all calculationsarrow_forwardsolve and show in detail all calculationsarrow_forward
- solve and show in detail all calculationsarrow_forwardProblem 1 Consider the following system. In the figure, y(t) denotes the voltage across the capacitor. u(t) 1+ R W L + 0000 y(t) C Y(s) (i) Find the transfer function H(s): = of the system. U(s) Now suppose, R 10 KQ, L = 0.5 mH and C = 10 μF. (ii) Find the poles and zeros. Is the system BIBO stable? (iii) Compute settling time, rise time, peak time and % overshoot of the step response of the system. What the steady-state output for unit step input?arrow_forwardA 3-phase, 52 H.P, 50 Hz, 6-Pole, Y- connected induction motor runs at a speed of 980 rpm.The motor is supplied from 380 V mains and it takes a rated current of 80 A at 0.8 p.f. If the total stator losses are 1.7 kW, determine: the air-gap power, rotor copper loss, friction and windage losses?arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSON
Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Programmable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill Education
Electric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSON
Engineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,