Chapter 3, Problem D3.32P

Design a MOSFET circuit in the configuration shown in Figure P3.26. The transistor parameters are $V_{TN}=0.4\text{V}$ and ${k^{\prime }}_n=120\mu {\text{A/V}}^{\text{2}}$ , and $\lambda \text{=0}$ . The circuit parameters are $V_{DD}=3.3\text{V}$ and $R_D=5\text{k}\Omega$ . Design the circuit so that $V_{DSQ}\cong 1.6\text{V}$ and the voltage across R5 is approximately 0.8 V. Set $V_{GS}=0.8\text{V}$ . The current through the bias resistors is to be approximately 5 percent of the drain current.