For the circuit shown in Fig. 2.20, the transistors are identica' and have the followingparameters: hje=50, hie = 1.1K, hr =0, and hoe = 0. Calculate Auf, Rif and Rof.Ans: 45.4; 112 KN; 129N.HH150k47kR25 V10k47k4.7k5μF33k4.7k50µF50µF4.7k4.7kR₁RojR1000

Step 1. Small-Signal Parameters:Using h-parameter model:rπ = hie = 1.1 kΩβ = hfe = 50ro = ∞ (since…

Answered: For the circuit shown in Fig. 2.20, the…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

2 V 1ΚΩ VOUT Find the following: a. Vout b. Small signal model of the diode under these conditions (Do NOT consider capacitance across the diode junction and the resistance of the semiconductor material outside the diode junction) c. Approx. peak-to-peak value of the AC component of Vout if a 1 mV RMS sinusoidal signal is added to the 2 V DC source. Given that: reverse saturation current is 1.5 x 10-14 A, ideality factor is 1.1, and the circuit is operating at 27°C.
A 1N4738A zener diode has a ZZ of 4.5 Ω. Taking the data from the datasheet we have VZ = 8.2 V with a test current, IZ, of 31 mA. What is the voltage across the zener terminals when the current is 15 mA? When the current is 55 mA? Make the representation of the values by means of their curve characteristic.
Discussion 1. Calculate the theoretical DC voltages and currents for the transistor bias circuit and compare them with the practically measured values. Table-1: Measured Quantities for the DC Bias Circuit Parameter B VB VE Vc Icọ VCEQ VBEQ Te Value 65.63 1.20 0.58 7.32 1418mA 6.74 0,62 18.3356 ECTR Vcc +12V R5 R3 3.3kQ всз37 R2 R4 4.7kQ 4700 Figure 5: The DC Bias Circuit of the Common Emitter Amplifier
ii)Rhs= 1.325 ℃/w
Determine VB, VE, VC, VCE, IB, IE, and IC in Figure. The 2N3904 is a general purpose transistor with a typical BDC 200 Vcc +30 V WWII VCE VB R₁ • 22 ΚΩ IC(mA) Chọn... * Chọn... * IB(UA) Chọn... * IE(MA) Chọn... ◆ Chọn... * Chọn... * Chọn... * VE VC R₂ ´ 10 ΚΩ www Rc 1.0 ΚΩ 2N3904 PDC=200 RE 1.0 ΚΩ
A Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.
RB= 430 kilo ohm
A ferrite ETD44 core type material is to be used in the converter design. If Bmax = 0.52T, and 350 turns of 1.5x10³cm² copper wire is to be wound around the core material to allow a flow of 5A maximum current, compute for the (a) inductor resistance, and the (b) inductance.
The diode in the circuit shown has a reverse saturation current of 1.5 x 10-¹4 A and an ideality factor of 1.1. Assume the circuit is operating at 27°C. a. Determine VOUT. b. What is the small signal model of the diode under these conditions? You may neglect the parasitic capacitance across the diode junction and the resistance of the semiconductor material outside the diode junction. C. 2 V ww 1ΚΩ ▷ -1₁ VOUT Use this small signal model to approximate the peak-to-peak value of the AC component of VOUT if a 1 mV RMS sinusoidal signal is added to the 2 V DC source.
24. Set up a midpoint bias for a JFET with Ipss = 14 mA and VGs(ofm = -10 V. Use a 24 V dc source as the supply voltage. Show the circuit and resistor values. Indicate the values of Ip, VGs, and Vps-
Except for FinFET and GaaFET discussed in the lecture, there are many new designs of FET. Please do a detailed study on any of them. In less than 200 words, state the advantages of it over the traditional
A Si pn-junction at 300 K has an n-side resistivity of 35 2 and a p-side doping level of N,= 1×106 cm at equilibrium the value of the contact potential barrier of the junction wvill be: Select one: OA. 0.5821 V B. 7.617 V CC. 0.07309 V D. 1.001 V E. 22.39 V

SEE MORE QUESTIONS

Recommended textbooks for you

Introductory Circuit Analysis (13th Edition)

Electrical Engineering

ISBN:

9780133923605

Author:

Robert L. Boylestad

Publisher:

PEARSON

Delmar's Standard Textbook Of Electricity

Electrical Engineering

ISBN:

9781337900348

Author:

Stephen L. Herman

Publisher:

Cengage Learning

Programmable Logic Controllers

Electrical Engineering

ISBN:

9780073373843

Author:

Frank D. Petruzella

Publisher:

McGraw-Hill Education

Introductory Circuit Analysis (13th Edition)

Electrical Engineering

ISBN:

9780133923605

Author:

Robert L. Boylestad

Publisher:

PEARSON

Delmar's Standard Textbook Of Electricity

Electrical Engineering

ISBN:

9781337900348

Author:

Stephen L. Herman

Publisher:

Cengage Learning

Programmable Logic Controllers

Electrical Engineering

ISBN:

9780073373843

Author:

Frank D. Petruzella

Publisher:

McGraw-Hill Education

Fundamentals of Electric Circuits

Electrical Engineering

ISBN:

9780078028229

Author:

Charles K Alexander, Matthew Sadiku

Publisher:

McGraw-Hill Education

Electric Circuits. (11th Edition)

Electrical Engineering

ISBN:

9780134746968

Author:

James W. Nilsson, Susan Riedel

Publisher:

PEARSON

Engineering Electromagnetics

Electrical Engineering

ISBN:

9780078028151

Author:

Hayt, William H. (william Hart), Jr, BUCK, John A.

Publisher:

Mcgraw-hill Education,

SEE MORE TEXTBOOKS

For the circuit shown in Fig. 2.20, the transistors are identica' and have the following parameters: hje=50, hie = 1.1K, hr =0, and hoe = 0. Calculate Auf, Rif and Rof. Ans: 45.4; 112 KN; 129N. HH 150k 47k R 25 V 10k 47k 4.7k 5μF 33k 4.7k 50µF 50µF 4.7k 4.7k R₁ Roj R1000