A Si pn-junction at 300 K has an n-side resistivity of 35 2 and a p-side doping level of N = 1×10 cm, at equilibrium the value of the contact potential barrier of the junction will be: Select one: OA. 0.5821 V OB. 7.617 V C.0.07309 V D. 1.001 V E. 22.39 V
A Si pn-junction at 300 K has an n-side resistivity of 35 2 and a p-side doping level of N = 1×10 cm, at equilibrium the value of the contact potential barrier of the junction will be: Select one: OA. 0.5821 V OB. 7.617 V C.0.07309 V D. 1.001 V E. 22.39 V
Introductory Circuit Analysis (13th Edition)
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Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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![A Si pn-junction at 300 K has an n-side resistivity of 35 2 and a p-side doping level of N,= 1×106
cm at equilibrium the value of the contact potential barrier of the junction wvill be:
Select one:
OA. 0.5821 V
B. 7.617 V
CC. 0.07309 V
D. 1.001 V
E. 22.39 V](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F94eb2371-3f18-44ed-baed-85c29c0c811d%2F55844742-477c-469f-9c4a-5141823a297e%2Fbwmilxr_processed.jpeg&w=3840&q=75)
Transcribed Image Text:A Si pn-junction at 300 K has an n-side resistivity of 35 2 and a p-side doping level of N,= 1×106
cm at equilibrium the value of the contact potential barrier of the junction wvill be:
Select one:
OA. 0.5821 V
B. 7.617 V
CC. 0.07309 V
D. 1.001 V
E. 22.39 V
![: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 x 10-34 J.s
Kg
Si
Ge
Ga As
mo
9.11 x 10-31
E, (eV)
ni (cm-3)
Hn (cm2/V – s)
Hp (cm2/V – s)
N. (cm-3)
Ny (cm-3)
1.1
0.67
1.42
T
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
8.85 x 10-12 F/m
1500
3900
8500
Eo
450
1900
400
1.05 x 10-34 J - s
2.78 x 1019
1.04 x 1019 4.45 x 1017
K
8.6 x 10-5 eV/K
9.84 x 1018
6 x 1018
7.72 x 1018
KT/q
%3D
m/m.
0.082
0.98
0.067
26 meV (T = 300 K)
3 x 108 m/s
KT
%3D
m/m.
0.28
0.49
0.45
C
Er (F/m)
11.7
16
13.1
Nair
1
%3D
NGAAS = 3.66
Some useful relations
EgALGa1-a As (T) = 1.424 + 1.247x
EgInzGa1-, As (T) = 0.36 + 1.064.x
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm2
%3D](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F94eb2371-3f18-44ed-baed-85c29c0c811d%2F55844742-477c-469f-9c4a-5141823a297e%2Fbvvn9ec_processed.jpeg&w=3840&q=75)
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 x 10-34 J.s
Kg
Si
Ge
Ga As
mo
9.11 x 10-31
E, (eV)
ni (cm-3)
Hn (cm2/V – s)
Hp (cm2/V – s)
N. (cm-3)
Ny (cm-3)
1.1
0.67
1.42
T
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
8.85 x 10-12 F/m
1500
3900
8500
Eo
450
1900
400
1.05 x 10-34 J - s
2.78 x 1019
1.04 x 1019 4.45 x 1017
K
8.6 x 10-5 eV/K
9.84 x 1018
6 x 1018
7.72 x 1018
KT/q
%3D
m/m.
0.082
0.98
0.067
26 meV (T = 300 K)
3 x 108 m/s
KT
%3D
m/m.
0.28
0.49
0.45
C
Er (F/m)
11.7
16
13.1
Nair
1
%3D
NGAAS = 3.66
Some useful relations
EgALGa1-a As (T) = 1.424 + 1.247x
EgInzGa1-, As (T) = 0.36 + 1.064.x
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm2
%3D
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