A Si pn-junction at 300 K has an n-side resistivity of 35 2 and a p-side doping level of N,= 1×106cm at equilibrium the value of the contact potential barrier of the junction wvill be:Select one:OA. 0.5821 VB. 7.617 VCC. 0.07309 VD. 1.001 VE. 22.39 V : Si, Ge, GaAs Parameters and Universal ConstantsUNIVERSAL CONSTANTSPropertiesSEMICONDUCTOR6.63 x 10-34 J.sKgSiGeGa Asmo9.11 x 10-31E, (eV)ni (cm-3)Hn (cm2/V – s)Hp (cm2/V – s)N. (cm-3)Ny (cm-3)1.10.671.42T3.141.5 x 10102.3 x 10131.8 x 1061.602 x 10-19 C8.85 x 10-12 F/m150039008500Eo45019004001.05 x 10-34 J - s2.78 x 10191.04 x 1019 4.45 x 1017K8.6 x 10-5 eV/K9.84 x 10186 x 10187.72 x 1018KT/q%3Dm/m.0.0820.980.06726 meV (T = 300 K)3 x 108 m/sKT%3Dm/m.0.280.490.45CEr (F/m)11.71613.1Nair1%3DNGAAS = 3.66Some useful relationsEgALGa1-a As (T) = 1.424 + 1.247xEgInzGa1-, As (T) = 0.36 + 1.064.x1 eV = 1.602 x 10-19 J1 KG = 1 x 10-5 Wb/cm2%3D

The donor impurity of the given pn junction is calculated as shown below: ρ=35…

A Si pn-junction at 300 K has an n-side resistivity of 35 2 and a p-side doping level of N = 1×10 cm, at equilibrium the value of the contact potential barrier of the junction will be: Select one: OA. 0.5821 V OB. 7.617 V C.0.07309 V D. 1.001 V E. 22.39 V

A Si pn-junction at 300 K has an n-side resistivity of 35 2 and a p-side doping level of N = 1×10 cm, at equilibrium the value of the contact potential barrier of the junction will be: Select one: OA. 0.5821 V OB. 7.617 V C.0.07309 V D. 1.001 V E. 22.39 V

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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