A germanium pn junction diode was fabricated on a wafer with doping concentration of 7.8 x 105 cm3. The p-region was created by doping 1018 cm using ion-implantation. Compute the following: barrier potential ii. i. depletion width at the junction. If this diode has saturation current Io-15 nA at 300 K, what is the diode current if potential across the diode is 0.8 V (n=1). 111.
A germanium pn junction diode was fabricated on a wafer with doping concentration of 7.8 x 105 cm3. The p-region was created by doping 1018 cm using ion-implantation. Compute the following: barrier potential ii. i. depletion width at the junction. If this diode has saturation current Io-15 nA at 300 K, what is the diode current if potential across the diode is 0.8 V (n=1). 111.
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![A germanium pn junction diode was fabricated on a wafer with doping concentration of 7.8 x 105
cm3. The p-region was created by doping 1018 cm using ion-implantation. Compute the following:
barrier potential
ii.
i.
depletion width at the junction.
If this diode has saturation current Io-15 nA at 300 K, what is the diode current if potential
across the diode is 0.8 V (n=1).
111.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F683c978b-d8d7-4fc5-8f58-f49676c872cc%2Fc293c5bd-f299-4c85-8ad8-cd87581a086a%2F920f1jd_processed.jpeg&w=3840&q=75)
Transcribed Image Text:A germanium pn junction diode was fabricated on a wafer with doping concentration of 7.8 x 105
cm3. The p-region was created by doping 1018 cm using ion-implantation. Compute the following:
barrier potential
ii.
i.
depletion width at the junction.
If this diode has saturation current Io-15 nA at 300 K, what is the diode current if potential
across the diode is 0.8 V (n=1).
111.
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