ere are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward curre ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flo iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the bar Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE

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Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE.
i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow.
ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction.
iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction.
iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction.
v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction.
vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor.
Which of the following statements is correct:
(i) and (ii) are both FALSE
(ii) and (v) are both FALSE
(iii) and (vi) are both FALSE
Transcribed Image Text:Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE
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