Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Question
Chapter 3, Problem D3.28P
To determine
The design parameters of the circuit.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
For a band-rejection filter, the response drops below this half power point at two locations as visualised in Figure 7, we need to find these
frequencies. Let's call the lower frequency-3dB point as fr and the higher frequency -3dB point fH. We can then find out the bandwidth as
f=fHfL, as illustrated in Figure 7.
0dB
Af
-3 dB
Figure 7. Band reject filter response diagram
Considering your AC simulation frequency response and referring to Figure 7, measure the following from your AC simulation. 1% accuracy:
(a) Upper-3db Frequency (fH) =
Hz
(b) Lower-3db Frequency (fL) =
Hz
(c) Bandwidth (Aƒ) =
Hz
(d) Quality Factor (Q) =
P 4.4-21 Determine the values of the node voltages V1, V2, and
v3 for the circuit shown in Figure P 4.4-21.
29
ww
12 V
+51
Aia
ww
22.
+21
ΖΩ
www
ΖΩ
w
+371
①1
1 A
1. What is the theoretical attenuation of the output voltage at the resonant frequency? Answer to within 1%, or enter 0, or infinity (as “inf”)
Attenuation =
Chapter 3 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EPCh. 3 - The transistor in Figure 3.26(a) has parameters...
Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
Knowledge Booster
Similar questions
- What is the settling time for your output signal (BRF_OUT)? For this question, We define the settling time as the period of time it has taken for the output to settle into a steady state - ie when your oscillation first decays (aka reduces) to less than approximately 1/20 (5%) of the initial value. (a) Settling time = 22 μs Your last answer was interpreted as follows: Incorrect answer. Check 22 222 What is the peak to peak output voltage (BRF_OUT pp) at the steady state condition? You may need to use the zoom function to perform this calculation. Select a time point that is two times the settling time you answered in the question above. Answer to within 10% accuracy. (a) BRF_OUT pp= mVpp As you may have noticed, the output voltage amplitude is a tiny fraction of the input voltage, i.e. it has been significantly attenuated. Calculate the attenuation (decibels = dB) in the output signal as compared to the input based on the formula given below. Answer to within 1% accuracy.…arrow_forwardmy previous answers for a,b,d were wrong a = 1050 b = 950 d=9.99 c was the only correct value i got previously c = 100hz is correctarrow_forwardV₁(t) ww ZRI ZLI ZL2 ZTH Zci VTH Zc21 Figure 8. Circuit diagram showing calculation approach for VTH and Z TH we want to create a blackbox for the red region, we want to use the same input signal conditions as previously the design of your interference ector circuit: Sine wave with a 1 Vpp, with a frequency of 100 kHz (interference) Square wave with 2.4Vpp, with a frequency of 10 kHz (signal) member an AC Thevenin equivalent is only valid at one frequency. We have chosen to calculate the Thevenin equivalent circuit (and therefore the ackbox) at the interference frequency (i.e. 100 kHz), and the signal frequency (i.e. 10 kHz) as these are the key frequencies to analyse. Your boss is assured you that the waveform converter module has been pre-optimised to the DAB Receiver if you use the recommended circuit topology.arrow_forward
- Vs(t) + v(t) + vi(t) ZR ZL Figure 1: Second order RLC circuit Zc + ve(t) You are requested to design the circuit shown in Figure 1. The circuit is assumed to be operating at its resonant frequency when it is fed by a sinusoidal voltage source Vs (t) = 2sin(le6t). To help design your circuit you have been given the value of inductive reactance ZL = j1000. Assume that the amplitude of the current at resonance is Is (t) = 2 mA. Based on this information, answer the following to help design your circuit. Use cartesian notation for your answers, where required.arrow_forwardWhat is the attenuation at the resonant frequency? You should use the LTSpice cursors for your measurement. Answer to within 1% accuracy, or enter 0, or infinity (as "inf") (a) Attenuation (dB) = dB Check You may have noticed that it was significantly easier to use frequency-domain "AC" simulation to measure the attenuation, compared to the steps we performed in the last few questions. (i.e. via a time-domain "transient" simulation). AC analysis allows us to observe and quantify large scale positive or negative changes in a signal of interest across a wide range of different frequencies. From the response you will notice that only frequencies that are relatively close to 100 kHz have been attenuated. This is the result of the Band-reject filter you have designed, and shows the 'rejection' (aka attenuation) of any frequencies that lie in a given band. The obvious follow-up question is how do we define this band? We use a quantity known as the bandwidth. A commonly used measurement for…arrow_forwardV₁(t) ww ZRI ZLI ZL2 ZTH Zci VTH Zc21 Figure 8. Circuit diagram showing calculation approach for VTH and Z TH we want to create a blackbox for the red region, we want to use the same input signal conditions as previously the design of your interference ector circuit: Sine wave with a 1 Vpp, with a frequency of 100 kHz (interference) Square wave with 2.4Vpp, with a frequency of 10 kHz (signal) member an AC Thevenin equivalent is only valid at one frequency. We have chosen to calculate the Thevenin equivalent circuit (and therefore the ackbox) at the interference frequency (i.e. 100 kHz), and the signal frequency (i.e. 10 kHz) as these are the key frequencies to analyse. Your boss is assured you that the waveform converter module has been pre-optimised to the DAB Receiver if you use the recommended circuit topology.arrow_forward
- Vs(t) + v(t) + vi(t) ZR ZL Figure 1: Second order RLC circuit Zc + ve(t) You are requested to design the circuit shown in Figure 1. The circuit is assumed to be operating at its resonant frequency when it is fed by a sinusoidal voltage source Vs (t) = 2sin(le6t). To help design your circuit you have been given the value of inductive reactance ZL = j1000. Assume that the amplitude of the current at resonance is Is (t) = 2 mA. Based on this information, answer the following to help design your circuit. Use cartesian notation for your answers, where required.arrow_forwardFor a band-rejection filter, the response drops below this half power point at two locations as visualised in Figure 7, we need to find these frequencies. Let's call the lower frequency-3dB point as fr and the higher frequency -3dB point fH. We can then find out the bandwidth as f=fHfL, as illustrated in Figure 7. 0dB Af -3 dB Figure 7. Band reject filter response diagram Considering your AC simulation frequency response and referring to Figure 7, measure the following from your AC simulation. 1% accuracy: (a) Upper-3db Frequency (fH) = Hz (b) Lower-3db Frequency (fL) = Hz (c) Bandwidth (Aƒ) = Hz (d) Quality Factor (Q) =arrow_forwardV₁(t) ww ZRI ZLI Z12 Zci Zcz Figure 4. Notch filter circuit topology ши Consider the second order resonant circuit shown in Figure 4. Impedances ZLIZ C1. ZL2. Z c2 combine together forming a two-stage "band- reject" filter, so called because it rejects a "band" (aka range) of frequencies. This circuit topology is also commonly referred to as a "band-stop" filter or "notch" filter. The output of the DAB receiver block has been approximated via Thevenin's theorem for you as a voltage source Vs (t) and associated series impedance Z RI To succeed in our goal, we are going to use an iterative design approach. First we will design the interference rejector, and then repeat the process, using the output of the interference rejector to check the provided waveform converter works as intended.arrow_forward
- 1. What is the settling time for your output signal (BRF_OUT)? For this question, We define the settling time as the period of time it has taken for the output to settle into a steady state - ie when your oscillation first decays (aka reduces) to less than approximately 1/20 (5%) of the initial value. (a) Settling timearrow_forward2. What is the total impedance Zt of your designed circuit? Represent your result in cartesian form NOTE: use j to represent sqare root Zt=arrow_forwardAn electric resistance space heater is designed such that it resembles a rectangular box 55 cm high, 75 cm long, and 20 cm wide filled with 45 kg of oil. The heater is to be placed against a wall, and thus heat transfer from its back surface is negligible. The surface temperature of the heater is not to exceed 75°C in a room at 25°C for safety considerations. The emissivity of the outer surface of the heater is 0.8 and the average temperature of the ceiling and wall surfaces is the same as the room air temperature. The properties of air at 1 atm and the film temperature are: k = 0.02753 W/m-°C, v=1.798 x 10-5 m²/s, Pr = 0.7228, and ẞ= 0.003096K-1 Wall T₁ =75°C Oil € = 0.8 Electric heater Heating element Disregarding heat transfer from the bottom and top surfaces of the heater in anticipation that the top surface will be used as a shelf, determine the power rating of the heater in W. The power rating of the heater is W.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSON
Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Programmable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill Education
Electric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSON
Engineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,