Chapter 3, Problem D3.36P

Design a MOSFET circuit with the configuration shown in Figure P3.30. The transistor parameters are $V_{TP}=-0.6\text{V}$ , ${k^{\prime }}_p=50\mu {\text{A/V}}^{\text{2}}$ , and $\lambda =0$ . The circuit bias is ±3 V, the drain current is to be 0.2 mA, the drain−to−source voltage is to be approximately 3 V, and the voltage across $R_S$ is to be approximately equal to $V_{SG}$ . In addition, the current through the bias resistors is to be no more than lo percent of the drain current. (Hint: choose a reasonable value of width−to−length ratio for the transistor.)