The current gain of the transistor in the circuit shown in Figure P5.32 is β = 150 . Determine I C , I E , and V C . for (a) V B = 0.2 V , (b) V B = 0.9 V , (c) V B = 1.5 V , and (d) V B = 2.2 V . Figure P5.32
The current gain of the transistor in the circuit shown in Figure P5.32 is β = 150 . Determine I C , I E , and V C . for (a) V B = 0.2 V , (b) V B = 0.9 V , (c) V B = 1.5 V , and (d) V B = 2.2 V . Figure P5.32
The current gain of the transistor in the circuit shown in Figure P5.32 is
β
=
150
. Determine
I
C
,
I
E
, and
V
C
. for (a)
V
B
=
0.2
V
, (b)
V
B
=
0.9
V
, (c)
V
B
=
1.5
V
, and (d)
V
B
=
2.2
V
.
Figure P5.32
(a).
Expert Solution
To determine
The values of IC,IE,VC for the given circuit.
Answer to Problem 5.32P
VC=6VIC=0IE=0
Explanation of Solution
Given Information:
β=150VB=0.2V
Calculation:
Assuming the NPN transistor operates in cutoff region.
The value of VBE is:
VBE=VB−VE=0.2−0=0.2VVBE<0.7V
Hence, the assumption is correct, and transistor operates in cutoff region.
IC=0IE=0
The value of collector voltage is:
VC=6−ICRC=6−0×RC=6V
(b).
Expert Solution
To determine
The values of IC,IE,VC for the given circuit.
Answer to Problem 5.32P
IC=0.199mAIE=0.2mAVC=4V
Explanation of Solution
Given Information:
β=150VB=0.9V
Calculation:
The value of emitter current is:
Applying Kirchhoff’s voltage law in base-emitter loop:
−VB+VBE+IERE=0−0.9+0.7+IE(1k)=0IE=0.2mA
The value of collector current is:
IC=(β1+β)IEIC=(150151)×0.2mAIC=0.199mA
The value of collector voltage is:
VC=6−ICRC=6−(0.199)(10k)=4V
(c).
Expert Solution
To determine
The values of IC,IE,VC for the given circuit.
Answer to Problem 5.32P
IC=0.5mAIE=0.8mAVC=1V
Explanation of Solution
Given Information:
β=150VB=1.5V
Calculation:
The value of emitter current is:
−VB+VBE+IERE=0−1.5+0.7+IE(1k)=0IE=0.81kIE=0.8mA
The value of collector current is:
IC=(β1+β)0.8mAIC=(150151)×0.8mAIC=0.795mA
The value of collector voltage is:
VC=6−ICRC=6−(0.795mA)(10k)=−1.95V
The value of VCB is:
VCB=VC−VB=−1.95−1.5=−3.45V
The value of VCB is negative, so it is forward biased (NPN transistor). When collector base junction is forward biased then transistor operates in saturation region.
Hence, the transistor operates in saturation region.
VCE(sat)=0.2V
The emitter current is:
−VB+VBE+IERE=0−1.5+0.7+IE(1k)=0IE=0.81kIE=0.8mA
The collector current is:
Applying Kirchhoff’s voltage law in collector-emitter loop:
The value of VCB is negative, so it is forward biased (NPN transistor). When collector base junction is forward biased then transistor operates in saturation region.
Hence, the transistor operates in saturation region.
VCE(sat)=0.2V
The emitter current is:
−VB+VBE+IERE=0−2.2+0.7+IE(1k)=0IE=1.51kIE=1.5mA
The collector current is:
Applying Kirchhoff’s voltage law in collector-emitter loop:
(i)
Find the inverse z-transform of the system H(z) =
for the following regions of
convergence. Write in the final answer for each case in the allocated rectangular box
below
(a) |z| 3
(c) 1
Q3:
Material A and Material B are collected in a tank as
shown where the system consists of three Push-Button,
three Level Sensors, two Inlet valve, one Outlet valve,
Heater, Temperature Sensor, Agitator Motor, and
Alarm Light. Material A and Material B are to be
mixed and heated until it reaches 90°C temperature,
and it will be drain using outlet valve also high-level
Alarm Light will come ON when the tank is full and
stay on even if the tank level drops until the operator
press Reset Push-Button. Implement automation of
this system in PLC using Ladder Diagram
programming language (Note: The tank is fed with
Material A before B and the temperature sensor can
withstand 200°C and it gives voltage from 0 to 10
volts)
(25 Marks)
Valve A
Agitator
Motor
Valve B
Level B
Heater
E
Level A
Low Level
Sta
Start Push-Button
Stop Push-Button
36.
ویر
نکند
Temperature sensor
Outlet
Valve
Reset Push-Button
Alarm Light
.Explain how a gated J-K latch operates differently from an edge-triggered J-K flip-flop.
. For the gated T Latch circuit, answer the following:
a) Draw the gate-level diagram of a gated T latch using basic logic gates and SR latch
b) Write the characteristic equation.
c) Draw the state diagram.
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