An electronic device, such as a power transistor mounted on a finned heat sink, can be modeled as a spatially isothermal object with internal heat generation and an external convection resistance. (a) Consider such a system of mass M , specific heat c , and surface area A s , which is initially in equilibrium with the environment at T ∞ . Suddenly, the electronic device is energized such that a constant heat generation E ˙ g W occurs. Show that the temperature response of the device is θ θ i = exp − t R C where θ ≡ T − T ∞ and T ∞ is the steady-state temperature corresponding to t → ∞ ; θ i = T i − T ∞ ; T i = , initial temperature of device; R = thermal resistance 1 / h ¯ A s ; and C = thermal capacitance Mc. (b) An electronic device, which generates 60 W of heat, is mounted on an aluminum heat sink weighing 0.31 kg and reaches a temperature of 100°C in ambient air at 20°C under steady-state conditions. If the device is initially at 20°C, what temperature will it reach 5 min after the power is switched on?
An electronic device, such as a power transistor mounted on a finned heat sink, can be modeled as a spatially isothermal object with internal heat generation and an external convection resistance. (a) Consider such a system of mass M , specific heat c , and surface area A s , which is initially in equilibrium with the environment at T ∞ . Suddenly, the electronic device is energized such that a constant heat generation E ˙ g W occurs. Show that the temperature response of the device is θ θ i = exp − t R C where θ ≡ T − T ∞ and T ∞ is the steady-state temperature corresponding to t → ∞ ; θ i = T i − T ∞ ; T i = , initial temperature of device; R = thermal resistance 1 / h ¯ A s ; and C = thermal capacitance Mc. (b) An electronic device, which generates 60 W of heat, is mounted on an aluminum heat sink weighing 0.31 kg and reaches a temperature of 100°C in ambient air at 20°C under steady-state conditions. If the device is initially at 20°C, what temperature will it reach 5 min after the power is switched on?
Solution Summary: The author explains the process is one-dimensional with steady state condition, with uniform h over surfaces, constant properties, and negligible amount of radiation.
An electronic device, such as a power transistor mounted on a finned heat sink, can be modeled as a spatially isothermal object with internal heat generation and an external convection resistance.
(a) Consider such a system of mass M, specific heat c, and surface area
A
s
, which is initially in equilibrium with the environment at
T
∞
. Suddenly, the electronic device is energized such that a constant heat generation
E
˙
g
W
occurs. Show that the temperature response of the device is
θ
θ
i
=
exp
−
t
R
C
where
θ
≡
T
−
T
∞
and
T
∞
is the steady-state temperature corresponding to
t
→
∞
;
θ
i
=
T
i
−
T
∞
;
T
i
=
, initial temperature of device;
R
=
thermal resistance
1
/
h
¯
A
s
; and
C
=
thermal capacitance Mc.
(b) An electronic device, which generates 60 W of heat, is mounted on an aluminum heat sink weighing 0.31 kg and reaches a temperature of 100°C in ambient air at 20°C under steady-state conditions. If the device is initially at 20°C, what temperature will it reach 5 min after the power is switched on?
Can you provide steps and an explaination on how the height value to calculate the Pressure at point B is (-5-3.5) and the solution is 86.4kPa.
PROBLEM 3.46
The solid cylindrical rod BC of length L = 600
mm is attached to the rigid lever AB of length a
= 380 mm and to the support at C. When a 500
N force P is applied at A, design specifications
require that the displacement of A not exceed
25 mm when a 500 N force P is applied at A
For the material indicated determine the
required diameter of the rod.
Aluminium: Tall = 65 MPa, G = 27 GPa.
A
Find the equivalent mass of the rocker arm assembly with respect to the x coordinate.
k₁
mi
m2
k₁
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