Two plates, one with a black painted surface and the other with a special coating (chemically oxidized copper) are in earth orbit and are exposed to solar radiation. The solar rays make an angle of 30 ∘ with the normal to the plate. Estimate the equilibrium temperature of each plate assuming they are diffuse and that the solar flux is 1368 W/m 2 . The spectral absorptivity of the black painted surface can be approximated by α λ = 0.95 for 0 ≤ λ ≤ ∞ and that of the special coating by α λ = 0.95 for 0 ≤ λ < 3 μ m and. α λ = 0.05 for λ ≥ 3 μ m .
Two plates, one with a black painted surface and the other with a special coating (chemically oxidized copper) are in earth orbit and are exposed to solar radiation. The solar rays make an angle of 30 ∘ with the normal to the plate. Estimate the equilibrium temperature of each plate assuming they are diffuse and that the solar flux is 1368 W/m 2 . The spectral absorptivity of the black painted surface can be approximated by α λ = 0.95 for 0 ≤ λ ≤ ∞ and that of the special coating by α λ = 0.95 for 0 ≤ λ < 3 μ m and. α λ = 0.05 for λ ≥ 3 μ m .
Solution Summary: The author explains the equilibrium temperature of each plate and the spectral absorptivity of the special coating surface.
Two plates, one with a black painted surface and the other with a special coating (chemically oxidized copper) are in earth orbit and are exposed to solar radiation. The solar rays make an angle of
30
∘
with the normal to the plate. Estimate the equilibrium temperature of each plate assuming they are diffuse and that the solar flux is
1368
W/m
2
. The spectral absorptivity of the black painted surface can be approximated by
α
λ
=
0.95
for 0
≤
λ
≤
∞
and that of the special coating by
α
λ
=
0.95
for 0
≤
λ
<
3
μ
m
and.
α
λ
=
0.05
for
λ
≥
3
μ
m
.
Define the absorption of radiation incident on an opaque surface of absorptivity α.
Calculate the radiation in watts per square centimeter from a block of copper at 200°C and at 1000°C. The oxidized copper surface radiates at 0.60 the rate of a black body.
A thin, disk-shaped silicon wafer of diameter D=20 cm on a production line must be maintained at a temperature of 100 deg C. The wafer loses heat to the room by convection and radiation from its upper surface, while heat is supplied at a constant flux from below. The surrounding air is at 20 deg C, while all surrounding surfaces (which can be treated as blackbodies) can be approximated to be isothermal at a temperature of 15 deg C. The wafer-to-air heat transfer coefficient is 30 W/m2-K and the emissivity of the wafer’s surface (which can be approximated to be gray) is 0.85. How much heat (in W) must be supplied to the wafer?
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, mechanical-engineering and related others by exploring similar questions and additional content below.