Consider the circuit in Figure P 11.88. The bias currents I 1 and I 2 are such that a zero de output voltage is established. The transistor parameters are: K p = 0.2 mA / V 2 , K n = 0.5 mA / V 2 , V T P = − 0.8 V , V T N = + 0.8 V , and λ n = λ p = 0.01 V − 1 . Determine the small-signal voltage gain A v = v o / v i n and the output resistance R o .
Consider the circuit in Figure P 11.88. The bias currents I 1 and I 2 are such that a zero de output voltage is established. The transistor parameters are: K p = 0.2 mA / V 2 , K n = 0.5 mA / V 2 , V T P = − 0.8 V , V T N = + 0.8 V , and λ n = λ p = 0.01 V − 1 . Determine the small-signal voltage gain A v = v o / v i n and the output resistance R o .
Solution Summary: The author explains the small signal voltage gain and the output resistance for the transistor I_2.
Consider the circuit in Figure
P
11.88.
The bias currents
I
1
and
I
2
are such that a zero de output voltage is established. The transistor parameters are:
K
p
=
0.2
mA
/
V
2
,
K
n
=
0.5
mA
/
V
2
,
V
T
P
=
−
0.8
V
,
V
T
N
=
+
0.8
V
,
and
λ
n
=
λ
p
=
0.01
V
−
1
.
Determine the small-signal voltage gain
A
v
=
v
o
/
v
i
n
and the output resistance
R
o
.
1. For the circuit in Figure 1:
a) Calculate the input and output power if the input signal results in a base
current of 5 mA rms.
b) Calculate the input power dissipated by the circuit if RB is changed to
1.5 kN.
c) What maximum output power can be delivered by the circuit if RB is
changed to 1.5 kN?
d) If the circuit is biased at its center voltage and center collector operating
point, what is the input power for a maximum output power of 1.5 W?
+Vcc (18 V)
RC -16Ω
RB
1.2 k2
B - 40
100 µF
1. For the circuit in Figure 1:
a) Calculate the input and output power if the input signal results in a base
current of 5 mA rms.
b) Calculate the input power dissipated by the circuit if Rg is changed to
1.5 kN.
c) What maximum output power can be delivered by the circuit if RB is
changed to 1.5 kN?
d) If the circuit is biased at its center voltage and center collector operating
point, what is the input power for a maximum output power of 1.5 W?
+Vcc (18 V)
Rc = 16 2
RB
1.2 k2
V.
B - 40
100 µF
Figure 1
A certain npn silicon transistor has vBE=0.7 V for iB=0.1 mA at a temperature of 30°C. Sketch the input characteristic to scale at 30°C. What is the approximate value of vBE for iB = 0.1 mA at 180°C? (Use the rule of thumb that vBE is reduced in magnitude by 2 mV per degree increase in temperature.) Sketch the input characteristic to scale at 180°C.
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