a.
The value of the resistor R1 and R2 in a way that the dc value of the output voltage is 0.
a.

Answer to Problem 11.89P
The value of the resistances are:
Explanation of Solution
Given:
The circuit is given as:
The circuit parameters:
The drain current of
Considering the expression for drain current of
Hence, the value of the resistor
Evaluating the value of source gate voltage of
Considering the expression for the drain current of
Hence, the value of the resistor
b.
To sketch: The small signal equivalent circuit and then find the small signal transistor parameters.
b.

Explanation of Solution
Given:
The circuit is given as:
The circuit parameters:
Evaluating the value of trans-conductance
Substituting
Evaluating the value of trans-conductance of
Evaluating the value of the resistor
Evaluating the value of the resistor
c.
The small signal voltage gain.
c.

Answer to Problem 11.89P
The small signal gain of the circuit is -15.25V/V.
Explanation of Solution
Given:
The circuit is given as:
The circuit parameters:
Drawing the small signal equivalent model of the circuit:
Applying nodal analysis at the input node:
Referring to the above diagram:
Applying the nodal analysis at the output node:
Hence, the small signal gain of the circuit is -15.25V/V.
d.
The output resistance.
d.

Answer to Problem 11.89P
The value of the output resistance is
Explanation of Solution
Given:
The circuit is given as:
The circuit parameters:
Evaluating the output resistance
Substituting
Hence, the value of the output resistance is
Want to see more full solutions like this?
Chapter 11 Solutions
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
- Q2: Using D flip-flops, design a synchronous counter. The counter counts in the sequence 1,3,5,7, 1,7,5,3,1,3,5,7,.... when its enable input x is equal to 1; otherwise, the counter count 0.arrow_forwardFrom the collector characteristic curves and the dc load line given below, determine the following: (a) Maximum collector current for linear operation (b) Base current at the maximum collector current (c) VCE at maximum collector current. lc (mA) 600 ΜΑ 60- 500 με 50- 400 με 40- 300 μ Α 30- Q-point 200 ΜΑ 20- 10- 100 μ Α 0 VCE (V) 1 2 3 4 5 6 7 8 9 10 [6 Paarrow_forwardProcedure:- 1- Connect the cct. shown in fig.(2). a ADDS DS Fig.(2) 2-For resistive load, measure le output voltage by using oscilloscope ;then sketch this wave. 3- Measure the average values ::f VL and IL: 4- Repeat steps 2 & 3 but for RL load. Report:- 1- Calculate the D.C. output vcl age theoretically and compare it with the test value. 2- Calculate the harmonic cont :nts of the load voltage, and explain how filter components may be selected. 3- Compare between the three-phase half & full-wave uncontrolled bridge rectifier. 4- Draw the waveform for the c:t. shown in fig.(2) but after replaced Di and D3 by thyristors with a 30° and a2 = 90° 5- Draw the waveform for the cct. shown in fig.(2) but after replace the 6-diodes by 6- thyristor. 6- Discuss your results. Please solve No. 4 and 5arrow_forward
- Please I want solution by handwrittenarrow_forward8 00 ! Required information Consider the circuit given below. 0/2 points awarded 3 ΚΩ www t=0 6kM Scored R 1.5i Vc 1 μF 10 V If R = 5.00 kQ, determine vao+). The value of va(0) is 1.4545 V.arrow_forwardI want to know what does it look in a breadboard circuit, because I want to created it but I not sure it is build properly, can you give me an illustuation base on this image, it do need to real, something like virutal examplearrow_forward
- Charge neutrality Since doped semiconductor remains electroneutral, the concentration of negative charges equals the concentration of positive charges. n+ Na,ionized p+Nd,ionized np = n; 2 2 N-Na N N d d р + 2 2 n = Nd-Na 2 + Na - 2 Na +n₁ 2 71/2 1/2 2 2 +n Concentration of electrons and holes 1. Calculate concentrations of electrons and holes at room temperature in Si and Ge with donor concentration of 1.5x10¹7 cm³ and acceptor concentration of 8x1016 cm-3. 2. Will these concentrations change much with the temperature increase to 100°C?arrow_forwardAnswer the questions on the end of the image pleasearrow_forwardAnswer these two questions on the end of the image, please 1.Calculate intrinsic carrier concentration for Si, Ge and GaAs at temperatures -20°C, 20°C (room temperature) and 120°C 2.Compare the obtained data with n and p shown on previous slide 25arrow_forward
- Can you help me achieve the requirements using Arduino? I have encountered some issues with these requirements. Q.2: Suppose you have two push buttons connected to ports (0 & 1) and four LED's connected to ports (6-9). Write a program to flash ON the odd LED's if we press the switch 0 for 4s, flash ON the even LED's if we press the switch 1 for 5s and flash ON all the LED's otherwise for 6s.arrow_forwardCharge carrier concentration in doped semiconductor: compensation n = Na - Na Na - Na >> ni n-type p = n₁²/n 2 if N₂ >> N₁, n = N₁_ and _p=n² / Na d p = Na-Nd p-type Na-Na >> n₁ d 2 n = n₁₂²/p 2 if N₁ >> N₁, p = N₁ and n = n² / Na a n-type Dopant compensation: Examples d n = Na-N₁ = 4×10¹ cm¯ -3 ++++++ n = 4×1016 cm-³ N=6×1016 cm-3 p=n/n=1020/4×1016 = 2.5×10³ cm p-type -3 p=Na-N₁ =8×10 −6×1016 = 2×10¹6 cm³ n=n²/p=1020/2×101 =5×10³ cm³ N2×1016 cm³ ++++++ N=6x1016 cm-3 N = 8×1016 cm-3 p=2×1016 cm³ The resulting charge carrier concentration in compensated semiconductor approximately equals the difference between the donor and acceptor concentrations. Charge carrier concentration in n-type and p-type semiconductors 1. Calculate concentrations of electrons and holes at room temperature in Si containing 2x1017 cm³ of donors and 8x1016 -3 cm³ of acceptors. Assume that Na, Nd >> n;. αν 2. Calculate concentrations of electrons and holes at room temperature in Ge containing 2x10¹7 cm³ of…arrow_forwardlonization energy of dopants in semiconductors lonization energy of shallow donors and acceptors can be evaluated using hydrogenic model: lonization energy E Hion and orbital radius a, of hydrogen atom Hydrogen Atom moe4 EHion = 13.6 eV a = 8ε²h² Απερη mee² = 5.2918 x 10-11 m lonization energy Eion and orbital radius D,A of donors and acceptors electron m* e4 Eion = ~50 meV 8K² &²h² 4πεερη2 "D,A 1 nm m*e² Orbit of an electron bound to a donor in a semiconductor crystal. Energy levels of donors and acceptors Conduction Band ↓ Ec -Ed Donor Level Donor ionization energy Acceptor ionization energy Acceptor Level Εα Ev Valence Band Ionization energy of selected donors and acceptors in silicon Donors Acceptors Dopant Sb P As B Al In Ionization energy, Ec-Ed or Ea-E, (meV) 39 44 54 45 57 160 Hydrogenic model of donors and acceptors Calculate the ionization energies and orbit radii of donors and acceptors in Si and Ge. Dielectric constant of silicon is k = 11.7. Dielectric constant of…arrow_forward
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,





