The differential amplifier in Figure P11.64 has a pair of PMOS transistors as input devices and a pair of NMOS transistors connected as an active load. The circuit is biased with I Q = 0.2 mA , and the transistor parameters are: K n = K p = 0.1 mA / V 2 , λ n = 0.01 V − 1 , λ p = 0.015 V − 1 V T N = 1 V , and V T P = − 1 V . (a) Determine the quiescent drain-to source voltage in each transistor. (b) Find the open-circuit differential mode voltage gain. (c) What is the output resistance?
The differential amplifier in Figure P11.64 has a pair of PMOS transistors as input devices and a pair of NMOS transistors connected as an active load. The circuit is biased with I Q = 0.2 mA , and the transistor parameters are: K n = K p = 0.1 mA / V 2 , λ n = 0.01 V − 1 , λ p = 0.015 V − 1 V T N = 1 V , and V T P = − 1 V . (a) Determine the quiescent drain-to source voltage in each transistor. (b) Find the open-circuit differential mode voltage gain. (c) What is the output resistance?
Solution Summary: The diagram shows the value of the quiescent drain to source voltage in each transistor.
The differential amplifier in Figure P11.64 has a pair of PMOS transistors as input devices and a pair of NMOS transistors connected as an active load. The circuit is biased with
I
Q
=
0.2
mA
,
and the transistor parameters are:
K
n
=
K
p
=
0.1
mA
/
V
2
,
λ
n
=
0.01
V
−
1
,
λ
p
=
0.015
V
−
1
V
T
N
=
1
V
,
and
V
T
P
=
−
1
V
.
(a) Determine the quiescent drain-to source voltage in each transistor. (b) Find the open-circuit differential mode voltage gain. (c) What is the output resistance?
you dont need to solve the question i just wanna know the steps and how to find the angle between the voltage difference and the current .
thanks so much
istics of diodes, bipolar junction transistors, and
plain the structure, operation,
1. The purpose of doping in semiconductor diodes is:
a) To control their electrical properties
b) To increase their physical size
c) To enhance their mechanical strength d) To improve their thermal stability
2. In electronics production, your team wants to manufacture a very cheap diode rectifier.
Which of the following rectifier configurations would you select?
a) Half-wave rectifier
c) Full-wave rectifier
b) Bridge rectifier
d) Controlled rectifier
3. The region that a Zener diode operates to provide voltage regulation is:
a) Saturation
c) Reverse bias
b) Breakdown
d) Forward bias
4. In NMOS transistors, the depth of the channel is primarily changed by:
a) VDS
b) lp
c) VGS
d) None of these
5. NMOS transistors have
than PMOS, resulting in better current conduction:
b) Long channel
a) High mobility
c) Low mobility
d) Short channel
6. You are working in electronic production, and your team is asked to…
8.46 The generator circuit shown in Fig. P8.46 (on page 494) isconnected to a distant load via a long coaxial transmission line.The overall circuit can be modeled as in Fig. P8.46(b), in whichthe transmission line is represented by an equivalent impedanceZline = (5+ j2) W.(a) Determine the power factor of voltage source Vs.(b) Specify the capacitance of a shunt capacitor C that wouldraise the power factor of the source to unity when connectedbetween terminals (a,b). The source frequency is 1.5 kHz.
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