MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Author: NEAMEN
Publisher: MCG
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Chapter 11, Problem 11.12EP
To determine
The value of
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........
(Figure-1)
R.
RB= 380kN,Rc= 1kN
B = 100, VBB = Vcc=12V
RB
ww
Vec
CC
.........
I,
V CE
СЕ
V
ВЕ
BB
Q-1-b) Describe briefly the input / output characteristics and application of Common
Emitter BJT Configuration
1. For the circuit in Figure 1:
a) Calculate the input and output power if the input signal results in a base
current of 5 mA rms.
b) Calculate the input power dissipated by the circuit if Rg is changed to
1.5 kN.
c) What maximum output power can be delivered by the circuit if RB is
changed to 1.5 kN?
d) If the circuit is biased at its center voltage and center collector operating
point, what is the input power for a maximum output power of 1.5 W?
+Vcc (18 V)
Rc = 16 2
RB
1.2 k2
V.
B - 40
100 µF
Figure 1
Time left 1:46:17
A bipolar junction transistor is described in the figure below. The transistor is implemented in the circuit with Vcc, Rc, and RB equal
to 16 volts, 2k, and 10kn. Determine the value of Vout if Vin = 1.1V.
V...
in
RB
B
Vec
Ro
V
E
out
Chapter 11 Solutions
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
Ch. 11 - The circuit parameters for the differential...Ch. 11 - Consider the de transfer characteristics shown in...Ch. 11 - Prob. 11.1CSPCh. 11 - Consider the diff-amp described in Example 11.3 ....Ch. 11 - Prob. 11.4EPCh. 11 - Prob. 11.1TYUCh. 11 - Prob. 11.2TYUCh. 11 - Assume the differential-mode gain of a diff-amp is...Ch. 11 - Prob. 11.5EPCh. 11 - Consider the diff-amp shown in Figure 11.15 ....
Ch. 11 - Prob. 11.7EPCh. 11 - Prob. 11.4TYUCh. 11 - Prob. 11.5TYUCh. 11 - The parameters of the diff-amp shown in Figure...Ch. 11 - For the differential amplifier in Figure 11.20,...Ch. 11 - The parameters of the circuit shown in Figure...Ch. 11 - The circuit parameters of the diff-amp shown in...Ch. 11 - Consider the differential amplifier in Figure...Ch. 11 - The diff-amp in Figure 11.19 is biased at IQ=100A....Ch. 11 - Prob. 11.10TYUCh. 11 - The diff-amp circuit in Figure 11.30 is biased at...Ch. 11 - Prob. 11.11EPCh. 11 - Prob. 11.12EPCh. 11 - Prob. 11.11TYUCh. 11 - Prob. 11.12TYUCh. 11 - Redesign the circuit in Figure 11.30 using a...Ch. 11 - Prob. 11.14TYUCh. 11 - Prob. 11.15TYUCh. 11 - Prob. 11.16TYUCh. 11 - Prob. 11.17TYUCh. 11 - Consider the Darlington pair Q6 and Q7 in Figure...Ch. 11 - Prob. 11.14EPCh. 11 - Consider the Darlington pair and emitter-follower...Ch. 11 - Prob. 11.19TYUCh. 11 - Prob. 11.15EPCh. 11 - Consider the simple bipolar op-amp circuit in...Ch. 11 - Prob. 11.17EPCh. 11 - Define differential-mode and common-mode input...Ch. 11 - Prob. 2RQCh. 11 - From the dc transfer characteristics,...Ch. 11 - What is meant by matched transistors and why are...Ch. 11 - Prob. 5RQCh. 11 - Explain how a common-mode output signal is...Ch. 11 - Define the common-mode rejection ratio, CMRR. What...Ch. 11 - What design criteria will yield a large value of...Ch. 11 - Prob. 9RQCh. 11 - Define differential-mode and common-mode input...Ch. 11 - Sketch the de transfer characteristics of a MOSFET...Ch. 11 - Sketch and describe the advantages of a MOSFET...Ch. 11 - Prob. 13RQCh. 11 - Prob. 14RQCh. 11 - Describe the loading effects of connecting a...Ch. 11 - Prob. 16RQCh. 11 - Prob. 17RQCh. 11 - Prob. 18RQCh. 11 - (a) A differential-amplifier has a...Ch. 11 - Prob. 11.2PCh. 11 - Consider the differential amplifier shown in...Ch. 11 - Prob. 11.4PCh. 11 - Prob. D11.5PCh. 11 - The diff-amp in Figure 11.3 of the text has...Ch. 11 - The diff-amp configuration shown in Figure P11.7...Ch. 11 - Consider the circuit in Figure P11.8, with...Ch. 11 - The transistor parameters for the circuit in...Ch. 11 - Prob. 11.10PCh. 11 - Prob. 11.11PCh. 11 - The circuit and transistor parameters for the...Ch. 11 - Prob. 11.13PCh. 11 - Consider the differential amplifier shown in...Ch. 11 - Consider the circuit in Figure P11.15. The...Ch. 11 - Prob. 11.16PCh. 11 - Prob. 11.17PCh. 11 - For the diff-amp in Figure 11.2, determine the...Ch. 11 - Prob. 11.19PCh. 11 - Prob. D11.20PCh. 11 - Prob. 11.21PCh. 11 - The circuit parameters of the diff-amp shown in...Ch. 11 - Consider the circuit in Figure P11.23. Assume the...Ch. 11 - Prob. 11.24PCh. 11 - Consider the small-signal equivalent circuit of...Ch. 11 - Prob. D11.26PCh. 11 - Prob. 11.27PCh. 11 - A diff-amp is biased with a constant-current...Ch. 11 - The transistor parameters for the circuit shown in...Ch. 11 - Prob. D11.30PCh. 11 - For the differential amplifier in Figure P 11.31...Ch. 11 - Prob. 11.32PCh. 11 - Prob. 11.33PCh. 11 - Prob. 11.34PCh. 11 - Prob. 11.35PCh. 11 - Prob. 11.36PCh. 11 - Consider the normalized de transfer...Ch. 11 - Prob. 11.38PCh. 11 - Consider the circuit shown in Figure P 11.39 . The...Ch. 11 - Prob. 11.40PCh. 11 - Prob. 11.41PCh. 11 - Prob. 11.42PCh. 11 - Prob. 11.43PCh. 11 - Prob. D11.44PCh. 11 - Prob. D11.45PCh. 11 - Prob. 11.46PCh. 11 - Consider the circuit shown in Figure P 11.47 ....Ch. 11 - Prob. 11.48PCh. 11 - Prob. 11.49PCh. 11 - Prob. 11.50PCh. 11 - Consider the MOSFET diff-amp with the...Ch. 11 - Consider the bridge circuit and diff-amp described...Ch. 11 - Prob. D11.53PCh. 11 - Prob. 11.54PCh. 11 - Prob. 11.55PCh. 11 - Consider the JFET diff-amp shown in Figure P11.56....Ch. 11 - Prob. 11.57PCh. 11 - Prob. 11.58PCh. 11 - Prob. D11.59PCh. 11 - The differential amplifier shown in Figure P 11.60...Ch. 11 - Prob. 11.61PCh. 11 - Consider the diff-amp shown in Figure P 11.62 ....Ch. 11 - Prob. 11.63PCh. 11 - The differential amplifier in Figure P11.64 has a...Ch. 11 - Prob. 11.65PCh. 11 - Consider the diff-amp with active load in Figure...Ch. 11 - The diff-amp in Figure P 11.67 has a...Ch. 11 - Consider the diff-amp in Figure P11.68. The PMOS...Ch. 11 - Prob. 11.69PCh. 11 - Prob. 11.70PCh. 11 - Prob. D11.71PCh. 11 - Prob. D11.72PCh. 11 - An all-CMOS diff-amp, including the current source...Ch. 11 - Prob. D11.74PCh. 11 - Consider the fully cascoded diff-amp in Figure...Ch. 11 - Consider the diff-amp that was shown in Figure...Ch. 11 - Prob. 11.77PCh. 11 - Prob. 11.78PCh. 11 - Prob. 11.79PCh. 11 - Prob. 11.80PCh. 11 - Consider the BiCMOS diff-amp in Figure 11.44 ,...Ch. 11 - The BiCMOS circuit shown in Figure P11.82 is...Ch. 11 - Prob. 11.83PCh. 11 - Prob. 11.84PCh. 11 - For the circuit shown in Figure P11.85, determine...Ch. 11 - The output stage in the circuit shown in Figure P...Ch. 11 - Prob. 11.87PCh. 11 - Consider the circuit in Figure P11.88. The bias...Ch. 11 - Prob. 11.89PCh. 11 - Consider the multistage bipolar circuit in Figure...Ch. 11 - Prob. D11.91PCh. 11 - Prob. 11.92PCh. 11 - For the transistors in the circuit in Figure...Ch. 11 - Prob. 11.94PCh. 11 - Prob. 11.95PCh. 11 - Prob. 11.96PCh. 11 - Consider the diff-amp in Figure 11.55 . The...Ch. 11 - The transistor parameters for the circuit in...
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Similar questions
- 1. For the circuit in Figure 1: a) Calculate the input and output power if the input signal results in a base current of 5 mA rms. b) Calculate the input power dissipated by the circuit if RB is changed to 1.5 kN. c) What maximum output power can be delivered by the circuit if RB is changed to 1.5 kN? d) If the circuit is biased at its center voltage and center collector operating point, what is the input power for a maximum output power of 1.5 W? +Vcc (18 V) RC -16Ω RB 1.2 k2 B - 40 100 µFarrow_forwardQUESTION 16: For the transistors in the circuit in Figure 11.32, the circuit parameters V* = 1.8V, V = −1.8V, and IQ = 155 μA. The transistor parameters are: k'n = 100 µA/V², k'p = 40 µA/V², VĨN = 0.3V, Vpp = −0.3V, (W/L)n = 8, (W/L)p = 10, λp = 35 mV¯¹, and λñ = 27 mV¯¹. Determine the small signal differential-mode voltage gain, Ad ro2₂ (k)| Format: 666.3325280404 704 (kn) Format: 583.38844987004 Ad Format: 73.235927554867 M₁ V10- ip3 M3 fiDi M₁ V+ V™ lo iD2 M₂ iD4 -OVO V₂arrow_forward5, a) Determine Vdsat when ID=.5 mA. b) Determine Kn when ID = 0.5 Amps. (Show your work!) c) Determine VTN. (Show your work!) d) Vgs Consider the circuit and corresponding graph, shown below. ID (mA) 0.60 0.50 0.40 0.30 0.20 0.10 0.00 0 0.5 Vds 1 1.5 2 2.5 Vds 3 3.5 4 4.5 5 -Vgs = 1V - Vgs = 1.1V - Vgs = 1.2V - Vgs = 1.3Varrow_forward
- QUESTION 1: The differential amplifier in Figure P11.4 is biased with a three-transistor current source. The transistor parameters: B = 160 , VBE(on) = 0.68 V, and V= 0. Determine I1, Ic2» Ic4, V CE2, and V CE4• 1 (mA) Format : 8.0238 Ic2 (mA) Ic4 (mA) Format : 8.0929 Format : 0.207 VCE2 (V) Format : 5.98 V CE4 (V) Format : 7.2693 +5 V R = 8.5 k2 Rc = 2 k2 2 k2 ICA Q4 VCE4 Q5 Q3 Q2 VCE2 -5 V Figure P11.4arrow_forwardFor the following peak or rms values of some important sine waves, calculate the corresponding other value: (a) 117 V rms, a household-power voltage in North America (b) 33.9 V peak, a somewhat common peak voltage in rectifier circuits (c) 220 V rms, a household-power voltage in parts of Europe (d) 220 kV rms, a high-voltage transmission-line voltage in North Americaarrow_forwardTHE PAIR of transistors Q1 and Q2 in the figure have gains β1 = 200 and β2 = 75 respectively. Determine the value of the equivalent gain βeq for the equivalent transistor Qeq. ( NEED ONLY HANDWRITTEN SOLUTION PLEASE OTHERWISE DOWNVOTE).arrow_forward
- QUESTION 6: Consider the circuit of Figure P11.3 with transistor parameters ß= 155 , V4=0, and VBE(on) = 0.66 V. The circuit is biased by V*= 6 V and V = -6 V. Design the circuit such that the Q-point values are Icı = Ic2 = 140 µA, and vo1 =vo2 = 1.2 V for vị = v2 = 0. Format : 98.34 Rc (kN) Format : 47.93 RE (kN) Ici RC RC v02 10a RE Figure P11.3arrow_forwarda) Given the choice between a MOSFE Open with for a high voltage application. State your selection with reasons. b) The parameters for the power MOSFET in the circuit shown in the Figure 1 are as follows: rise time, t₁ =2 µs; on resistance, Ros(on) = 0.202; duty cycle, D = 0.7; and switching frequency, f = 30 kHz. Determine: i. the power-loss in the on state. ii. the power-loss during the turn-on interval. Vos 100 V ID D S R₁ = 120 Figure 1 c) Draw a clearly labeled diagram of the thermal equivalent circuit of a transistor. d) The maximum junction temperature of a power transistor is T; = 150 °C and the ambient temperature is T₁ = 25 °C. If the thermal impedances are Rjc = 0.4 C/W, Rcs=0.1 °C/W, and RSA = 0.5 °C/W. Calculate, i. the maximum power dissipation. ii. the case temperature.arrow_forwardTrue or False answer all with brief explainarrow_forward
- Please answer with reasons why its true or false. Just Last 3 Thank youarrow_forwardi need Full detailed Stepsarrow_forwardYou are tasked to design a dc power supply that operates from a single-phase ac supply (50Hz) with source inductanceof 1.5mH/phase. It is required to supply a dc load (resistive) with 55A at 322 Volt. Assume infinite inductive filtering andthe use of power diodes with a forward voltdrop of 0.7V. Consider the bridge converter topology and specify the followingdesign parameters,30) the loss in voltage due to commutation overlap;31) the r.m.s. ac supply voltage required;32) the overlap angle;33) the transformer utilisation factor;34) the rectification efficiency of the converter;35) the dc current rating of the rectifier diodes;36) the r.m.s. current rating of the rectifier diodes;37) the form factor of the diode current;38) the peak repetitive forward current rating of the rectifier diodes;39) the peak repetitive reverse voltage rating of the rectifier diodesarrow_forward
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