3) A Si p*-n junction has a donor doping of 5x1016 cm³ on the n side, an acceptor doping of 5x1018 cm³ on the p side, and a cross-sectional area of 10³ cm². Here t, = 1µs and D, = 10cm²/s, thus the diffusion length L, = /D,T, = 3.2x10³ cm For Si n, = 1010/cm³ &, = 12€0 (a) Calculate the reverse saturation current lo. (b) Calculate the current with a forward bias of 0.5V at 300K. (c) Calculate the zero voltage Capacitance C, assuming a step junction. (Use ɛo = 8.85x101ª Farads/cm, so your final answer will be in Farads)

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3) A Si p*-n junction has a donor doping of 5x1016 cm³ on the n side, an acceptor doping
of 5x1018 cm3 on the p side, and a cross-sectional area of 103 cm?.
Here t, = 1µs and D, = 10cm²/s, thus the diffusion length L, = D,Tp = 3.2x10³ cm
For Si n; = 1010/cm³ ɛ, = 12€0
(a) Calculate the reverse saturation current lo.
(b) Calculate the current with a forward bias of 0.5V at 300K.
(c) Calculate the zero voltage Capacitance C, assuming a step junction. (Use ɛo =
8.85x1014 Farads/cm, so your final answer will be in Farads)
Transcribed Image Text:3) A Si p*-n junction has a donor doping of 5x1016 cm³ on the n side, an acceptor doping of 5x1018 cm3 on the p side, and a cross-sectional area of 103 cm?. Here t, = 1µs and D, = 10cm²/s, thus the diffusion length L, = D,Tp = 3.2x10³ cm For Si n; = 1010/cm³ ɛ, = 12€0 (a) Calculate the reverse saturation current lo. (b) Calculate the current with a forward bias of 0.5V at 300K. (c) Calculate the zero voltage Capacitance C, assuming a step junction. (Use ɛo = 8.85x1014 Farads/cm, so your final answer will be in Farads)
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