Question1: In your own words, supported by figures, demonstrate the avalanche breakdown which may occur in a silicon pn junction.

Introductory Circuit Analysis (13th Edition)
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Question1: In your own words, supported by figures, demonstrate the avalanche breakdown
which may occur in a silicon pn junction.
Question2: Calculate I, and the current I for V-0.73v for a pn junction for which Na-1017/cm2,
Np-1016/cm', A-10um x10um, n-1.5x101%cm', L-5um, L-10x10 cm, D-10x10 um2/s, and
D=18cm/s.
Question3: A uniform piece of n-type of silicon that is 1um long senses a voltage of 1V.
Determine the velocity of the electrons. Use u-1350 cm2/V.sec
Question4: A pn junction is biased with a reverse voltage (VR) and is doped with NA = 2x1016
/cm and Np-9x1015 /cm Determine the capacitance of the device with (a) VR=0v; (b) VR=1v.
Use ɛ, = 11.7 €9, Eo-8.854x10-14 F/cm, q=1.6x10-1°c, n=1.5x1010 /cm, m=1/2, Vr 25.8mV,
Cross-section area = 10cm?.
Transcribed Image Text:Question1: In your own words, supported by figures, demonstrate the avalanche breakdown which may occur in a silicon pn junction. Question2: Calculate I, and the current I for V-0.73v for a pn junction for which Na-1017/cm2, Np-1016/cm', A-10um x10um, n-1.5x101%cm', L-5um, L-10x10 cm, D-10x10 um2/s, and D=18cm/s. Question3: A uniform piece of n-type of silicon that is 1um long senses a voltage of 1V. Determine the velocity of the electrons. Use u-1350 cm2/V.sec Question4: A pn junction is biased with a reverse voltage (VR) and is doped with NA = 2x1016 /cm and Np-9x1015 /cm Determine the capacitance of the device with (a) VR=0v; (b) VR=1v. Use ɛ, = 11.7 €9, Eo-8.854x10-14 F/cm, q=1.6x10-1°c, n=1.5x1010 /cm, m=1/2, Vr 25.8mV, Cross-section area = 10cm?.
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