II. PN junction, Forward bias and reverse bias. Consider a pn junction with a cross-sectional area A = 0.001 cm? with the following parameters: N, = 1017 cm3 Ng = 1015 Tp = 10 µs %3D 0.1us 200cm2/V-s Hp = Hn -700 Ho = 1300 Hp 450 Take kT/q at room temp is 25.9 mV.n 1.5 x 1010/cm. Einstein relation, D/µ =

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II. PN junction, Forward bias and reverse bias. Consider a pn junction with a
cross-sectional area A = 0.001 cm? with the following parameters:
N, = 101 cm3
Tn = 0.1us
Ho = 200cm²/V-s
Hn -700
Ng = 1015
Tp = 10 µs
Ho = 1300
Hp -450
%3D
%3D
Take kT/q at room temp is 25.9 mV.n 1.5 x 1010/cm³. Einstein relation, D/µ =
kT/q, and the Diffusion Length, L= (Dt)/2, n = P,n, = n,Pp.
Diode Current is I = qA[DpPn/Lp + Dnnp/L [exp qV/kT - 1]
= lo [exp qV/kT - 1]
(ii) The junction is reversed biased by-0.5V. What is the current?
(i)
The junction is forward biased by 0.5 V. What is the forward current?
Transcribed Image Text:2 II. PN junction, Forward bias and reverse bias. Consider a pn junction with a cross-sectional area A = 0.001 cm? with the following parameters: N, = 101 cm3 Tn = 0.1us Ho = 200cm²/V-s Hn -700 Ng = 1015 Tp = 10 µs Ho = 1300 Hp -450 %3D %3D Take kT/q at room temp is 25.9 mV.n 1.5 x 1010/cm³. Einstein relation, D/µ = kT/q, and the Diffusion Length, L= (Dt)/2, n = P,n, = n,Pp. Diode Current is I = qA[DpPn/Lp + Dnnp/L [exp qV/kT - 1] = lo [exp qV/kT - 1] (ii) The junction is reversed biased by-0.5V. What is the current? (i) The junction is forward biased by 0.5 V. What is the forward current?
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