When a positive bias of 0.5 V is applied to the metal side of a Pt–Si junction, the junction has the capacitance of 0.25 pF. A bias of 1.5 V results in a capacitance of 0.05 pF. The junction area A = 10-5 cm2, and the temperature T = 300 K. The effective electron mass in Si is me* = 0.26 me. (a) Is the semiconductor of p- or n-type? What is the smallest value of the applied voltage at which the space-charge region in the semiconductor starts to appear? Is the metal work function bigger or smaller than the semiconductor’s? (b) What is the doping level of the semiconductor? (c) What
When a positive bias of 0.5 V is applied to the metal side of a Pt–Si junction, the junction has the capacitance of 0.25 pF. A bias of 1.5 V results in a capacitance of 0.05 pF. The junction area A = 10-5 cm2, and the temperature T = 300 K. The effective electron mass in Si is me* = 0.26 me. (a) Is the semiconductor of p- or n-type? What is the smallest value of the applied voltage at which the space-charge region in the semiconductor starts to appear? Is the metal work function bigger or smaller than the semiconductor’s? (b) What is the doping level of the semiconductor? (c) What
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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When a positive bias of 0.5 V is applied to the metal side of a Pt–Si junction, the
junction has the capacitance of 0.25 pF. A bias of 1.5 V results in a capacitance of 0.05 pF. The
junction area A = 10-5 cm2, and the temperature T = 300 K. The effective electron mass in Si is
me* = 0.26 me. (a) Is the semiconductor of p- or n-type? What is the smallest value of the applied voltage at
which the space-charge region in the semiconductor starts to appear? Is the metal work
function bigger or smaller than the semiconductor’s? (b) What is the doping level of the semiconductor? (c) What is the value of the metal work function?
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